TGT725D Search Results

2SC594

Abstract: 2SA594 OOD7427 N-325 70M40 2SA59
Contextual Info: TOSHIBA O I S CRETE/OPTO} 9097250 TO SHIBA DE J t O T T E S Q OOD7427 E ~SÍ <D I S C R E T E / O P T O 5òC 07^27 0 /13/-2-3 SILICON NPN EPITA XIA L TYPE PCT PROCESS) Unit- in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. j2fe.S9M AX. VIDEO AMPLIFIER APPLICATIONS.

BST 063 133

Contextual Info: _ ^ PRELIMINARY -AS . •— FEATURES: ■ ULTRA LOW NOISE FIGURE ■ GATE LENGTH < 0.2 ixm ■ T-SHAPED GATE ■ CHIP FORM 0.75 dB at f = 18 GHz ■ SUPER HIGH ASSOCIATED GAIN 11 dB at f = 18 GHz ■ H IG H M AXIM UM AVAILABLE GAIN 13 dB a t f = 18 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz