TFR 586 Search Results

Contextual Info: Filename: tfr 586.doc Version 2.0 VI TELEFILTER 21.03.2005 Resonator specification TFR 586 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 25 °C dBm 50 50 Ω Ω Characteristics Remark: The minimum of the attenuation amin is defined as the insertion loss ae. The centre frequency fc is the measured frequency at 3 dB. The frequency shift of

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

gto switching test abb

Abstract: gto 2400 abb gto characteristic
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 900 16x103 1.8 0.9 2400 V A A V mΩ V Fast Recovery Diode 5SDF 07H4501 Doc. No. 5SYA1111-02 Oct. 06 • Patented free-floating silicon technology • Low switching losses • Optimized for use as large-area snubber diode in GTO

abb gto characteristic

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1200 25x103 1.3 0.48 2800 V A A V mΩ V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1400 25x103 1.2 0.32 2200 V A A V mΩ V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO

A140

Abstract: B140 C140 VF140 VF25 5SDF kn 18
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 March 05 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating

5.5 kw abb

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 810 24x103 2.42 1.1 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

Fast Recovery Diodes

Abstract: 5SDF-20L4520
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1950 38x103 1.70 0.80 2800 V A A V Fast Recovery Diode 5SDF 20L4520 m V Doc. No. 5SYA1184-02 Feb. 13 Industry standard housing Cosmic radiation withstand rating Optimized low switching losses Optimized for snubberless operation

5SDF28L4520

Abstract: 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2750 40x103 1.35 0.38 2800 V A A V m V Fast Recovery Diode 5SDF 28L4520 Preliminary Doc. No. 5SYA1185-01 Dec. 11 • Industry standard housing  Cosmic radiation withstand rating  Optimized low on-state

A125

Abstract: B125 C125 D125 10H4503
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

10H4503

Abstract: abb b25
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Nov. 04 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

switching diode 3.381

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 5500 175 3x103 3.35 7.2 3300 V A A V mΩ V Fast Recovery Diode 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA1118-02 Okt. 02 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

abb gto characteristic

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 5500 585 18x103 4.5 1.3 3300 V A A V mΩ V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

Fast Recovery Diodes

Abstract: 5SDF28L4520
Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2620 48x103 1.10 0.47 2800 V A A V Fast Recovery Diode 5SDF 28L4520 m V Doc. No. 5SYA1185-02 Feb. 13 Industry standard housing Cosmic radiation withstand rating Optimized low on-state Optimized for snubberless operation

SHDG1052

Abstract: SHDG1053 SHDG1054 SI591
Contextual Info: 12.10- Low VcE{sat j Improved SCSOAIGBT Devices: IGBT Characteristics: Continuous Collector Current lc @Tc=90°C Continuous Collector Current lc @ T c=25°C Volts Amps Amps Pulsed Collector Current Tc=25°C, 1 ms Amps 600 600 1000 20 30 25 40 50 50 80 100

TFR 419

Contextual Info: 1N6638 1N6638U SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 604, REV. - HERMETIC ULTRAFAST RECTIFIER AXIAL LEAD and SURFACE MOUNT MELF DESCRIPTION: A 150 VOLT, 0.3 AMP, 4.5 NANOSECOND HERMETIC RECTIFIER. Note: To order this device with S-100 Screening, add a suffix S to the part number.

Contextual Info: SENSITRON SEMICONDUCTOR 1C6642 TECHNICAL DATA DATA SHEET 1188, REV A SMALL SIGNAL / COMPUTER DIODE CHIP • DESCRIPTION: A 100 VOLT, 0.3 AMP, 4.0 NANOSECOND RECTIFIER DIE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED RATING SYMBOL

1C6640

Contextual Info: SENSITRON SEMICONDUCTOR 1C6640 TECHNICAL DATA DATA SHEET 4968, Rev- SMALL SIGNAL / COMPUTER DIODE CHIP • DESCRIPTION: A 75 VOLT, 0.3 AMP, 4.0 NANOSECOND RECTIFIER DIE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED RATING PEAK INVERSE VOLTAGE

IGCT thyristor ABB

Abstract: gct thyristor A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 high power igct abb IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 May 04 • High snubberless turn off rating • Optimized for medium frequency (<1kHz) and

1c4148

Contextual Info: 1C4148 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4229, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED RATING

1C4150AG

Contextual Info: SENSITRON SEMICONDUCTOR 1C4150AG TECHNICAL DATA DASTASHEET 5098, REV - SMALL SIGNAL / SWITCHING SILICON DIODE CHIP • DESCRIPTION: A 75 VOLT, 0.2 AMP, 4.0 NANOSECOND RECTIFIER DIE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED

1c4148

Contextual Info: SENSITRON SEMICONDUCTOR 1C4148 TECHNICAL DATA DATASHEET 4229, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED MAXIMUM RATINGS RATING

Contextual Info: SENSITRON SEMICONDUCTOR 1C4150 TECHNICAL DATA DATA SHEET 4979, REV - SMALL SIGNAL / COMPUTER DIODE CHIP • DESCRIPTION: A 75 VOLT, 2.5 AMP, 4.0 NANOSECOND RECTIFIER DIE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED RATING PEAK INVERSE VOLTAGE