10H6004 Search Results

IGCT thyristor ABB

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 Doc. No. 5SYA 1226-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

IGCT abb

Abstract: ka 70 05
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control

ABB Semiconductors

Abstract: RCD snubber
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

Abb diode 6000 A

Contextual Info: Key Parameters VRRM = 6000 IFAVM = 1100 IFRMS = 1700 IFSM = 18 VF0 = 1.50 rF = 0.6 VDClink = 3800 V A A kA V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA 1109-02 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses

RCD snubber

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V Fast Recovery Diode 5SDF 10H6004 mΩ V Doc. No. 5SYA 1109-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

abb gto characteristic

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

IGCT thyristor ABB

Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

diode sy 170

Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.

FSV 052

Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.