TF 513 C Search Results

2mb1200

Abstract: DIODE s3l 2MB1300 2mb1200l 2MB1200LB-060 1MB1300L-060 1mb1400l-060 1MBI50L-060 2MB1100L-060 2MBI50L-060
Contextual Info: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600 600

2mb1200

Abstract: 2mb1200lb-060 2MBI100F-060 M-219 m219 1MBI300F-060 2MBI150F-060 2mbi200f 2MBI300F-060 2MBI50F-060
Contextual Info: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device VCES Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600

D680A

Abstract: diode 513 MUBW 30-12E6K 30-12E6K MUBW30-12E6K IXYS IGBT MUBW RTH1 THERMISTOR
Contextual Info: MUBW 30-12E6K Converter - Brake - Inverter Module CBI1 NPT3 - IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter V RRM = 1600V IDAVM25 = 130 A I FSM = 300 A VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V VCES = 1200 V IC25 = 29 A VCE(sat) = 2.9 V

rthjc

Abstract: ntc 0931
Contextual Info: MUBW 15-12A6K Converter - Brake - Inverter Module CBI1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter V RRM = 1600V IDAVM25 = 130 A I FSM = 300 A VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V Application: AC motor drives with

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Transistor Device No. Output PD •c v CEO mW mA V Min Current Transfer Ratio Diode Vf? V 'f v iSO ic ^ F @>F @ Vc e mA kV % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Device No. Output PD mW Transistor •c v CEO mA V Diode Vf? V 'f mA v iSO kV Min Current Transfer Ratio ic ^ F @>F @V c e % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30

S11108

Abstract: image 360 KMPDC0312EC KMPDC0319ED 1116S
Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

S11108

Abstract: high frequency linear cmos IMAGE SENSOR KMPDC0312EC high frequency line scan 2048 pixels array
Contextual Info: CMOS linear image sensor S11108 Achieves high sensitivity by adding an amplifier to each pixel The S11108 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area effective photosensitive area length: 28.672 mm consisting of 2048 pixels, each with a pixel size of 14

112B

Contextual Info: Version 1.2 tfs112B.doc VI TELEFILTER 1. Filter Specification 23.10.2000 TFS 112B - 1/5 Measurement condition : Ambient temperature TA: Input power level: Terminating impedances at fc: Q-value of matching elements: 23 °C 0 dBm. for input: for output: 50.70

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 C o u p le d C h a ra c te ris tic s M ax R a ting s @ T * = 25°C T ra n s is to r D e vice No. O u tp u t PD •c mW mA v CEO V M in C u rre n t T ra n s fe r Ratio Diode Vf? V 'f mA v iSO kV ic ^ F % @>F mA @ Vc e V FCD830D<2> Trans 250 25 30 3.0 60

FCD830

Abstract: B 511 transistor diode 513 FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830A
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>

Contextual Info: S L A 6 0 0 0 s e r ie s CMOS HIGH SPEED GATE ARRAY • DESCRIPTION T h e S LA 6000 s e rie s c o n s is ts o f a grou p o f 8 C M OS G ate arrays w ith g a te c o u n ts from 513 to 6,206 gates. The s e rie s is fa b ric a te d u tiliz in g o u r 2 m icron h ig h sp e e d C M O S silicon gate te c h n o lo g y to achieve propagation dela ys

DB-135

Contextual Info: Version 1.2 tfs112A.doc VI TELEFILTER 1. Filter Specification 23.10.2000 TFS 112A - 1/5 Measurement condition : Ambient temperature TA: Input power level: Terminating impedances at fc: Q-value of matching elements: 23 °C 0 dBm. for input: for output: 50.70

sla6050

Abstract: SLA6270 SLA6080 SLA6430 SLA6620 SLA6000 AA132 SLA6270* plcc F44-6 SLA6140
Contextual Info: SLA6000 / - y .2 ' CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates • DESCRIPTION The SLA6000 series consists of a group of 8 CMOS gate arrays with gate counts from 513 to 6,206 gates. The

SLA6270

Abstract: SLA6140 sla6430 Sla6000 SLA6080
Contextual Info: SbE D S-n 0 S SYSTEMS INC 7 ^ 32 ^ 0*1 00014Ô0 35b • SLA6000 CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates ■ DESCRIPTION

transistor 2sB633

Abstract: 2sd613 2SB633 513H 2sb633 sanyo
Contextual Info: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB

2SB633

Abstract: 513H 2SD613
Contextual Info: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Transistor PD Device No. Output mW •c v CEO mA V Min Current Transfer Ratio Diode Vf? V 'f v iSO ic ^ F @>F @ Vc e mA kV % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30

IRF510

Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power

2304T

Abstract: PMB2314T PMB2305 dect pmb h9101 2306T PMB2304R TSSOP16 PMB2304 PMB2306T
Contextual Info: Wireless Components PLL-Frequency Synthesizer PMB 2304T Version 2.2 Specification August 2003 preliminary Revision History: Current Version: 08.03 Previous Version:Data Sheet Page in previous Version Page (in current Version) Subjects (major changes since last revision)

SMD DIODE 513

Contextual Info: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V

CH 89 A15A

Contextual Info: CMOSリニアイメージセンサ S11108 画素ごとにアンプを内蔵することで高感度を実現 S11108は画素ごとにアンプを内蔵することで高感度を実現したCMOSリニアイメージセンサです。画素サイズ 14 x 14

Z5.6

Abstract: Schauer Z20 SCHAUER zener diode sz 6 Z6.8 z7.5 Z9.1 zener DIODE Zener Diode ST 41 Z3.3 sz 9.0
Contextual Info: 8029975 SCHAUER MFG CQRP* 67C 0 0 0 6 0 SCHAUER MFG C O R P / t? T -Il- H E ^ a o a n 7 s o o a o o to o I f ! SZ ZENER DIODES Heavy Duty Type .1 50 MAX. DIA. • Smaller Package. '. • Higher Voltages. • Gold Plated Leads. • Heavy Tantalum Heat Sinks.

ATMEL AT27c512

Abstract: 27C512 128K ATMEL 515 AT27C512 27c513 27C515-15 27C512 27C512 RESET 27C512-15 atmel 748
Contextual Info: Features * Paged Configurations with Page Reset on Power-Up AT27C512 - Not Paged, 64K x 8 AT27C513 - 4 Pages, 16K X 8 AT27C515 - 2 Pages, 32K x 8 * Low Power CMOS Operation 100 jjlA max. Standby 40 mA max. Active at 5 MHz * Fast Read Access Time - 120ns * Wide Selection of JEDEC Standard Packages incl. OTP