FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Transistor PD Device No. Output mW •c v CEO mA V Min Current Transfer Ratio Diode Vf? V 'f v iSO ic ^ F @>F @ Vc e mA kV % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30
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1431 transistor
Abstract: FCD836 FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C PD Device No. Output mW Transistor •c v CEO mA V Min Current Transfer Ratio Diode Vf? V 'f v iSO ic ^ F @>F @ Vc e mA kV % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30
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fcd836fcd836dfcd850fcd850c+7fcd850dfcd8301431 transistorfcd855fcd855cfcd855dfcd860
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FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Device No. Output PD mW Transistor •c v CEO mA V Diode Vf? V 'f mA v iSO kV Min Current Transfer Ratio ic ^ F @>F @V c e % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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rg121juwima tfmbeckman 785-1mkb3+7wima tfm-.1uf-160vbf197diode zener ph c9v12n42862n3642bf197ptransistor 2n2359a
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FCD860
Abstract: fcd865 FCD860D
Contextual Info: S3E J> ABORN ELECTRONICS □ D7^t>m GOOOObl Tbb • ABE H h 8 5 VBOUV ELECTRONICS, INC. Optically-Coupled Darlington Isolator Optoelectronic Products General Description The FCD860, FCD865 series of optoisolators have a silicon npn Planar Darlington phototransistor coupled
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fcd860/c/dfcd865/c/dfcd860fcd865+4temperatcd865cfcd860dfcd865dfcd860c
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darlington opto coupler
Abstract: opto 4N33 FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD865 FCD865D
Contextual Info: FAIRCHILD OPTOELECTRONICS OPTO COUPLERS—DARLINGTON OUTPUT MAX RATINGS @ TA = 25°C Transistor Item DEVICE NO. Diode PD mW mA ic v CEO V Vr V mA if v ISO kV 1 FCD850 250 125 30 3.0 80 1.5ac 2 FCD850C 250 125 30 3.0 80 5.0 3 FCD850D 250 125 30 3.0 80 6.0 4
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fcd850fcd850cfcd850dfcd855+9fcd855cfcd855dfcd860c131fcd860d131fcd865fcd865c13darlington opto coupleropto 4n33fcd865d
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FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 C o u p le d C h a ra c te ris tic s M ax R a ting s @ T * = 25°C T ra n s is to r D e vice No. O u tp u t PD •c mW mA v CEO V M in C u rre n t T ra n s fe r Ratio Diode Vf? V 'f mA v iSO kV ic ^ F % @>F mA @ Vc e V FCD830D<2> Trans 250 25 30 3.0 60
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fcd836fcd836dfcd850fcd850c+9fcd850ddarl65dfcd860fcd860cfcd865fcd865cfcd855fcd855cfcd855d
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100414DC
Abstract: 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB fairchild rtl FSA2501
Contextual Info: FAIRMONT ELECTRONICS PTY. LTD. TE L.48-6421 4 8 -6 4 8 1 /2 /4 C AB LES ' FAIRTRONICS' C R A IG H A L L T E L E X 8-3227 S A . P O .BOX 41102, C R A IG H A LL 2024. I ouani v-ox 39! 262Bramley 2018 FAIRCHILD 464 Ellis Street, M ountain View, C alifornia 94042
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262bramleyorporation/464962-5011/twx19-pin+10100414dc5401dmfairchild dtl catalogfsa2719m4727bpcfcm7010fcm7004937dmqbfairchild rtlfsa2501
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darlington opto coupler
Abstract: FCD850 FCD850C FCD855 FCD855C opto 4N33
Contextual Info: CouplersTransistor Output Cont’d Max Ratings (a! TA 25°C Diode Transistor ic VCEO V Vr V mA V iso kV 1.5 Device No. PD mW ÏIL111 ! TIL112 TIL114 « TIL115 TIL116 TIL117 TIL118 250 — 30 3.0 100 250 — 20 3.0 100 1.5 250 — 30 3.0 100 2.5 250 — 20
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tili12tili14tili15tili16+8tili17_tili18fcd850fcd850cfcd855fcd855cdarlington opto coupleropto 4n33
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FCD830
Abstract: B 511 transistor diode 513 FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830A
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>
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fcd810bfcd810cfcd810dfcd820b+8fcd820cfcd82saturationfcd830b 511 transistordiode 513fcd825afcd825dfcd830a
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FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Transistor Device No. Output PD •c v CEO mW mA V Min Current Transfer Ratio Diode Vf? V 'f v iSO ic ^ F @>F @ Vc e mA kV % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30
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