TF 164 Search Results

sefuse d6x

Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

SEFUSE SF240E

Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

1838 t

Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

D-10

Abstract: IRGPH50MD2 1838t
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

JS8818A-AS

Abstract: S3V 82 S3V 39
Contextual Info: J S 8 8 1 8 A - A S FEATURES: • LOW NOISE FIGURE 1.3 dB at f = 12 GHz 2.0 dB at f = 18 GHz a 0.3 jum GATE LENGTH ■ HIGH ASSOCIATED GAIN lO d B a tf = 12 GHz 7.5 dB a t f = 18 GHz ■ CHIP FORM ■ HIGH MAXIMUM AVAILABLE GAIN 11 d B a tf = 12 GHz 9.0 dB at f = 18 GHz

AO222

Abstract: ND3B FD2D2 FD3D2 STD150 FD2Q OA221 Samsung 546 NID4 FD4D2
Contextual Info: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.112ns, one fanout (SL = 0.00305pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2

hd66840fs

Abstract: HD61830A00H HD66841FS 120-channel HD61100 lcd 2 by 16 HD66204F/FLVTF/TFL hd61830B00 LCD 80 segment driver "LCD timing controller"
Contextual Info: Type Number Order Sorted by Type Name Type HD44100RFS HD44102CH HD44103CH HD44105H HD44780UA00FS/00TF/01FS/ 02FS/UB*FS/UB*TF LCD-II HD61100A HD61102RH HD61103A HD61200 HD61202/TFIA HD61203/TFIA HD61602R/RH HD61603R HD61604R HD61605R HD61830A00H LCDC HD61830B00H LCDC

Darlington npn stud mount

Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
Contextual Info: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz

Contextual Info: * SY10494-5 SY10494-6 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ. Eliminates write recovery glitch found on

mafe modem

Abstract: MC68DP356
Contextual Info: ! ^c fC MOTOROLA M icroprocessor a n d M em ory Technologies Group ' A, tf £ 2 Order this document by MC68DP356/D MC68DP356 Product Brief V.34 Modem Chip Set INTRODUCTION The MC68DP356 is a two-chip set that includes the principal components of a V.34 modem, including fall back

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on

Contextual Info: A W Â M ! D M IF iO ^G töA TF O !^ in te i SPECIAL ENVIRONMENT lntel386TM EX EMBEDDED MICROPROCESSOR • Static ln tel38 6 T M CPU Core — Low Power Consumption — 5V ± 5% Operating Power Supply — 25 MHz Operating Frequency ■ Transparent Power-management

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

Contextual Info: T h p t HEWLETT &"UM PA C K A R D 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data A TF-44101 Featu res • High Output Power: 32.0 dBm Typical Pi ^ at 4 GHz • High Gain a t 1 dB Compression: 8.5 dB Typical Gj ^ at 4 GHz • High Power Efficiency:

2SD650

Abstract: 2SD867 2SC1398 2SC1815 2SC2240 2SD797 2SD2061 2SD642 2s0867 2Sd428
Contextual Info: - 208 - £ Type No. m. tt « Manuf. 2SD 160 ✓ 2SD 161 SANYO 3tí S TOSHIBA 2SC783 m NEC Al HITACHI 2SD1138 *± il 2SD867 2SD797 2SD 165 f tf-y'rv •y-vírv ■y-yírv 2SÜ í68 ✓ s± 3 2SD867 2SD650 H 2S0 170A 2SC2120 2SD468 2SD 162 H ± il FUJITSU tó

NE674

Abstract: NE67483 NE67483B
Contextual Info: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m

Contextual Info: HITACHI/ MCU/MPU 4 4 cîtaSQl4 0 0 2 3 4 0 4 SbE 0 S • T-H-tf-öV H8/330 HD6473308, HD6433308 HARDWARE MANUAL #H04 H I T A C H ' S I " M21T005 HITACHI/ (MCU/nPU) 2bE Q ■ 4 41 ta2D 4 G Q 2 3 4 D S 7 ■ T-49-19-06 When using this document, keep the following in mind:

C354B

Abstract: C157C C156D c157a C154 C154A C158 C164 C354 C358
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 40 0 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 7 0 0 8 0 0 850 9 0 0 1000 1150

ATF-10100

Contextual Info: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data A TF-10100 F e atu res • L o w N o ise F ig u re : 0.5 dB Typical at 4 GHz • L o w B ia s: Vds = 2V,I ds = 25mA • H igh A sso c ia te d G ain: 14.0 dB Typical at 4 GHz

Contextual Info: 2 A 3 5 4 6 7 11,1. X Kontakt-Typ pin-type Lochbild a n c A B L D E F H K (board d r i l l i n g s ) Pos i t i on — 32 position *A a lL e Locher a ll holes 01 ±0,1 0 0 ,0 5 O c— ! I -H t + + + + * f+4 ‘i-H+ftf+^-H+H + f —^ o o < Tf Y Y Y Qj

MCL SRA-1

Abstract: MCL SRA-1 connections MCL gra-3 MCL sra 1 MCL 1 SBL-1 MCL SBL-1 MCL SRA MCL TAK 6 MCL SRA-3
Contextual Info: F r eq u e n c y M ix e r s Level 7 500 Hz to3.5 GHz GRA SRA +7 dBm LO, up to +1 dBm RF LCM tf ISOLATION. dB • ; ^ V Q M H O N ‘y f CASH' C os« P rice $ öeeRF/IF ■ G R A-l GRA-3 GRA-6 GRA-8 Rana» ’ ■, '1 ‘t T c t p - ' Typ. Min. ïyp MM üt

LI80

Abstract: NJU6446 NJU6446F sthil sf 1020
Contextual Info: NJU6446 K y • «E h 7 LC D m m NJU64461±. s h' 7 ^ ' T% ffiSgfflh* 7 ^ a ' ¿ L - r g a - C f . o m iM fk f t 8 0 t* 4 lXjl»h‘ ?-f/\‘ frè fllJ îltÿ iH .T l ' S f . h* W 7 IA ' * S 3 i 4 ö * r t ' m ä S l i tfä m - v - t, ■4$ NJU6446F NJU6446C