TF 164 Search Results

15268

Abstract: AM150MX-TF
Contextual Info: AM150MX-TF September 2002 Rev. 3 DESCRIPTION AMCOM’s AM150MX-TF is a part of the TF series of GaAs MESFETs. This part has a total gate width of 15.0mm. The AM150MX-TF is designed for high power microwave applications, operating up to 6 GHz. The TF series is in a drop-in mounting style. The bottom of the

168 523.24

Abstract: AM144MX-TF 4-9094
Contextual Info: Plastic Packaged GaAs Power FET AM144MX-TF DATASHEET V. 1, November, 1999 DESCRIPTION AMCOM's AM144MX-TF is part of the TF Series of GaAs MESFETs. This part has a total gate width of 14.4 mm. The AM144MX-TF is designed for high power microwave applications, operating up to 8 GHz.

M3329

Contextual Info: 023M Ä ft î ì m ft m n m & tf s ^ » m & M ä & 1,002,989 ^ & 71,233 8,221,441 fi m m 455,447 * 730,850 591,441 * * ^ M m ^ ft U » $• m 19,706 79,655 t m # & ; m ^ m © m ft » m 463,260 ^ U A Ä M æ » m ê i n s §i ^ & ^ ^ # M & tf S fi X ^ ^ ^ & tf « m

sefuse d6x

Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

SEFUSE SF240E

Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

PE1541

Abstract: PM8943 Philips capacitor 166 Philips electrolytic 132
Contextual Info: Philips Semiconductors Product specification Video driver hybrid amplifier FEATURES PINNING • Typical transition timer, 10 to 90% with C l = 10 pF: - at 35 V (p-p) swing tr = 2.2 ns; tf = 2.0 ns - at 40 V (p-p) swing tr = 2.3 ns; tf = 2.1 ns - CR3424 PIN

1838 t

Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

D-10

Abstract: IRGPH50MD2 1838t
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

JS8818A-AS

Abstract: S3V 82 S3V 39
Contextual Info: J S 8 8 1 8 A - A S FEATURES: • LOW NOISE FIGURE 1.3 dB at f = 12 GHz 2.0 dB at f = 18 GHz a 0.3 jum GATE LENGTH ■ HIGH ASSOCIATED GAIN lO d B a tf = 12 GHz 7.5 dB a t f = 18 GHz ■ CHIP FORM ■ HIGH MAXIMUM AVAILABLE GAIN 11 d B a tf = 12 GHz 9.0 dB at f = 18 GHz

gs 069 0605

Abstract: 4210M 8016 nec 5501 gm
Contextual Info: SUPER LOW NOISE HJ FET FEATURES_ NE4210M01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • S U P E R L O W N O IS E F IG U R E : 0.8 dB TYP a tf = 12 GHz • H IG H A S S O C IA T E D G A IN : 11.0 dB TYP a tf = 12 GHz • G A T E W ID T H : W g = 200 jim

FS0606

Abstract: FS4W1010
Contextual Info: RADIAL LEADED SHIELDED INDUCTORS FS0606/0807/1008/1010/1012/1014/1215/1618 TYPE Shape and size : Dimensions are in mm Features : Ordering information : ．Vertical structure, small, lightweight design. FS 1012 - 223 K - TF ．No inductive interference.

Contextual Info: RADIAL LEADED SHIELDED INDUCTORS FS0606/0807/1008/1010/1012/1014/1215/1618 TYPE Shape and size : Dimensions are in mm Features : Ordering information : ．Vertical structure, small, lightweight design. FS 1012 - 223 K - TF ．No inductive interference.

AO211

Abstract: STD130 SAMSUNG 834
Contextual Info: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.155ns, one fanout (SL = 0.00517pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2 ad2b ad2bd2 ad2bd4

GCK 164

Abstract: samsung 649 ao21 OA21D
Contextual Info: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.204ns, one fanout (SL = 0.00486pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2_lp ad2b_lp ad2bd2_lp

AO222

Abstract: ND3B FD2D2 FD3D2 STD150 FD2Q OA221 Samsung 546 NID4 FD4D2
Contextual Info: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.112ns, one fanout (SL = 0.00305pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2

hd66840fs

Abstract: HD61830A00H HD66841FS 120-channel HD61100 lcd 2 by 16 HD66204F/FLVTF/TFL hd61830B00 LCD 80 segment driver "LCD timing controller"
Contextual Info: Type Number Order Sorted by Type Name Type HD44100RFS HD44102CH HD44103CH HD44105H HD44780UA00FS/00TF/01FS/ 02FS/UB*FS/UB*TF LCD-II HD61100A HD61102RH HD61103A HD61200 HD61202/TFIA HD61203/TFIA HD61602R/RH HD61603R HD61604R HD61605R HD61830A00H LCDC HD61830B00H LCDC

113 y

Abstract: HA 1329 QN-08 1329 y-448 AO2222
Contextual Info: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5

LPR26-RL2

Abstract: LPS26-RL2 LPR27-ML5 LPS27-RL2 LPS27-ML5 AC250V6A AC125V3A LPS26-YL8 LPS26-ML5 LPR27-YL8
Contextual Info: LPR &LPS « B Ä Ä tf/li & y 7 s v * Illuminated Pushbutton Switches •Features • ¿ y 'm i- # 1i o m ■ t t « u z m ^ - ^ m L x m t 0 - £ AC125V 3A • DC30V 3A

transistor d 13009

Abstract: IC 566 vco transistor j 13009 IC 8085 pin
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■

AFBR-703SDZ

Abstract: IEC-61000-4-2 RIN12OMA SDD11 SFF-8431 10G SFP PRBS31
Contextual Info: AFBR-703SDZ 850nm Digital Diagnostic SFP+ Transceiver for 10Gb Ethernet 10GBASE-SR Characterization Report Description The AFBR-703SDZ optical transceivers are reduced cost SFP+ 10 Gigabit Ethernet 10GBASE-SR modules for use on multimode fiber. • Receiver Rise and Fall Times RX TR and RX TF

AFBR-703ASDZ

Abstract: IEC-61000-4-2 RIN12OMA SDD11 SFF-8431 10G SFP SCD11 042UI PRBS31
Contextual Info: AFBR-703ASDZ 850nm Digital Diagnostic SFP+ Transceiver for 10Gb Ethernet 10GBASE-SR Characterization Report Description The AFBR-703ASDZ optical transceivers are reduced cost SFP+ 10 Gigabit Ethernet 10GBASE-SR modules for use on multimode fiber. • Receiver Rise and Fall Times RX TR and RX TF

Darlington npn stud mount

Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
Contextual Info: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25

sot-37

Contextual Info: Philips Semiconductors Product Specification 16-bit dual supply translating transceiver; 3-state QUICK REFERENCE DATA GND = 0 V; Tamb = 25°C; tr = tf ≤ 2.5 ns FEATURES • • • • • Wide supply voltage range A port: 1.2 to 3.6 V B port: 1.2 to 5.5 V