TF 115 250V 2A Search Results

tf 216 10a 250v

Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Contextual Info: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly

SEFUSE SF240E

Abstract: SEFUSE SF214E SEFUSE SEFUSE SF129E SEFUSE SF226e SF240E SF119E SEFUSE SF214E sefuse sf 91e SF139Y
Contextual Info: SEFUSE TM THERMAL CUTOFF 8th Edition Cutaway View of SEFUSETM SF Type SF Type SEFUSE TM Contents Introduction . 4 Features . 4

Contextual Info: SS FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A ,500V,rDS ON = 2.50£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

FSL430R

Abstract: tf 115 250v 2a 4010 IC data sheet MIL-S-19500 2E12 3E12 FSL430D fsl430
Contextual Info: S E M I C O N D U C T O R FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2N6547

Contextual Info: Product Specification www.jmnic.com 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls

2N6547

Abstract: 2N6546 tf 115 250v 2a
Contextual Info: SavantIC Semiconductor Product Specification 2N6546 2N6547 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ·Switching regulators

2N6547

Abstract: 2N6546
Contextual Info: JMnic Product Specification 2N6546 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls

10016DC

Abstract: TF PTC
Contextual Info: S T 15950 M I C R O S E ívíI — . C Q R P / P OWE R 02 —- 02E D E |b ll5 ^ 0 0Ö476 _D 0QQDM71n b | • —w t “"T '' « ? ,3 * '2 ^ py q f -|0 0 1 5 PTC 10016 'J P 'T C C T TECHNOLOGY Power Technology Components HIGH VOLTAGE DARLINGTON

transistor d333

Abstract: TRANSISTOR BC 384 mercury wetted relay, double contact DT5336 npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v
Contextual Info: LUCAS STABILITY ELEK 011. UU164 100W A H LTD öl D n D • — SL.07013 -T - 3 3 - 2 ,7 HIGH V O LTA G E DARLINGTON TR A N SIST O R S 300-500V CO LLEC TO R -EM ITTER V O LTA G E □ □ □ □ im DT4335 DT4336 DT5335 DT5336 ■ LUCB The DT4335/6 and DT5335/6 are NPN double epitaxial devices conforming to

Contextual Info: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Contextual Info: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

2N6547

Abstract: tf 115 250v 15a 2N6546
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators

2E12

Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Contextual Info: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: 3 FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 2A, 500V, rQS oN) = 2.50Q • Total Dose - Meets Pre-Rad Specifications to 100KRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: h a r r is S E M I C O N D U C T O R FSL430D, FSL430R " M W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Panasonic ECE-A1H

Abstract: Panasonic SU ECEA1HU ECEA1VU ECE-A1H ecea2cu
Contextual Info: Panasonic A lu m in u m E lectrolytic Capacitors Radial Leads Type SU Series Radial Leads Type FEATURES • Standard Grade ■ Life : 2000 hours at + 85°C ■ W ide Range of Rated W orking Voltage from 6.3V to 450V ■ Fan Fold Box Packaging for Automatic Insertion

GE6062

Abstract: GE6060 ge6061
Contextual Info: HARRIS SEMICOND SECTOR 27E » • 43QHE,.7]i 0020415 2 « H A S !_ File Number Power Transistors GE6060,GE6061,GE6062 15.85 - " r '3 3 '2 ^ 1 ' 20-Ampere N-P-N Darlington Power Transistors

GES060

Abstract: GE5060 J325 tf 115 250v 15a 100J GE5061 GE5062 ge5062T tf 115 250v 2a
Contextual Info: File Number GE5060, GE5061, GE5062 15.84 20-Am pere N -P -N Darlington Power Transistors TERMINAL DESIGNATION : F LA N G E Features: • HIgh-voltaga operation: 350, 400, 450 volts ■ Gain o l 100 at 10A Applications: ■ Series/shunt regulators • Autom otive ignition

GE6062

Abstract: GE6061 ge 6061 GE6060 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: HIGH SPEED GE6060,1,2 NPN POWER DARLINGTON TRANSISTORS 400-500 VOLTS 20 AMP, 125 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, A C & DC motor control, UPS systems, ultrasonic equipm ent and

2N6547

Abstract: tf 115 250v 2a 12 volt 200 Amp PWM
Contextual Info: 2N6547 NPN POWER TRANSISTORS 400 VOLTS 15 AMP, 175 WATTS The 2N6547 transistor is designed for high-voltage, high­ speed power switching in inductive circuits where fall time is critical. It is particularly suited for 115 and 220 volt line operated switch-m ode applications such as: switching regu­

equivalent mje13005

Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: 1N4933 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.