TES 1310 Search Results

Contextual Info: 10 NO TES: 1. HOUSING M A T E R IA L : LC P , G L A S S F IL L E D , U L 9 4 V - 0 COLOUR B L A C K . - .0 4 4 1 .0 0 3 (1.12 ± 0.08 .0 7 9 2 . 00 ) 2. T E R M IN A L M A T E R IA L : P H O S P H O R BR O N ZE 3 . S E E A P P R O P R IA T E S H E E T FO R CIRCUIT S IZE ,

Contextual Info: A SP-19458-03 NO TES: 1. SHEAR POST TO .115. 2 . H E IG H T V A R IA T IO N BETW EEN A N Y TWO . 1 6 5 REF C O N T A C T A R E A 3. 4. 5. .2 3 0 Ì.0 0 8 ROWS S H A L L BE .0 0 5 M AX. P A R T S TO BE B U LK P A C K A G E D . T E R M IN A L P U S H O U T FORCE: 3 lb s .

Contextual Info: ISSI' IS 4 2 S 1 6 1 2 8 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

S29F010

Contextual Info: TMS29F010 131072 BY 8-BIT FLASH MEMORY ^ • ^ _ SMJS840-NOVEMBER 1997 ^ Single Power Supply FM PACKAGE TOP VIEW 5 V ± 10% • • • Organization . . . 131072 by 8 Bits Eight Equal Sectors of 16K Bytes - Any Combination of Sectors Can Be

Contextual Info: HN27C301P/FP Series— 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C301P/FP Series are in the " 1 " state output high .

Contextual Info: 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer

Contextual Info: ISSI' IS 4 2 S 1 6 1 2 8 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as

F0501

Abstract: MB85R1001 MB85R1001PFTN
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-2E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

72V263

Abstract: 72V273 72V293 JMAR Semiconductor
Contextual Info: Preliminary Data Sheet J72V263….16,384 x 9 Bits or 8,192 x 18 Bits J72V273….32,768 x 9 Bits or 16,384 x 18 Bits J72V283….65,536 x 9 Bits or 32,768 x 18 Bits J72V293….131,072 x 9 Bits or 65,536 x 18 Bits VeloSync+TM High Performance 9 or 18 Bit Wide 3.3V Synchronous FIFO

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-4E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-1E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

TDA1310A

Abstract: TDA1310AT
Contextual Info: Philips Semiconductors Preliminary specification Stereo Continuous Calibration DAC CC-DAC TD A 1310A FEATURES GENERAL DESCRIPTION • Space saving package DIL8 or SOS The TDA1310A is a device of a new generation of Digital-to-Analog Converters (DACs) which embodies the

MB85R2001

Abstract: MB85R2001PFTN-GE1
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Fujitsu IR c code

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-8E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-1E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-7E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: L .o T T L DN74LS08 D N 7 4 L 3 O e r ie s DN74LS08 131074^? Quad 2 - input P o sitiv e AND Gates I Description P-1 D N74LS08 contains four 2-input positive isolation AND gate circuits. • Features • • • • Low power consum ption Pd = 17mW typical

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13108-4E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-5E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-6E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-5E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

kje x6

Abstract: kje y4 KJE T5 256x16e KJE T3 kje y9 KJE T4 Y1 kje
Contextual Info: IS 42S 16128 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION MAY 1998 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's4M b Synchronous DRAM IS42S16128 is organized as