TES 1310 Search Results

1091001

Abstract: 0.75um 79109-7014
Contextual Info: 10 NO TES: — 1. HOUSING MATERIAL: GLASS FILLED HIGH TEMP , THERMOOPLASTIC COLOUR BLACK. -079 f f f '“ " T h r ii 2. TERMINAL MATERIAL: PHOSPHOR BRONZE ROW A 3. SEE APPROPRIATE SHEET FOR CIRCUIT SIZE, PART NUMBERS AND OVERALL DIMENSIONS. CAVITY ID NON CIRCUIT ID

IC 3950

Abstract: L-10M21 tes 1310 624SHL laser diode 1550 nm
Contextual Info: • bSHTflET 0010305 TES ■ MITSUBISHI OPTICAL DEVICES FU-624SH L-10M21 /10M22/12M21 /12M22 1.55 |im LD MODULE WITH SINGLEMODE FIBER PIGTAIL D E S C R IP T IO N FEATURES Module type FU -624SHL-XXM XX has been developed • High optical o u tp u t power

TC16-11

Contextual Info: N O TES: 1. All dim ensions are in m illim eters inches 2. Tolerance is ±0.25m m (0.01") unless otherw ise noted. 99 •S A /SC 43 Series •SA/SC 05 Series SA05-11 3 . 8 7 6 4 2 1 9 10 5 K) ó p- Ü U fvlO o SC05-11 0 0.5(0.02) 3 , 8 7.62(0.3) SC43-11 DP1 NO CHIP

molex 53375

Abstract: 53375-0210 AE23 by92
Contextual Info: 5H 5 N O TES A 10 +0.1 2.5 t'V? "(N O N -A C C U M U LA T IV E ) 0 I -o AiSSSSlcSfflo APPLIES (P ITC H ) ro . in - Ò 5 I z q — 1 Ò - ' è ' “ Ò 2. - TO EVEN NO. CKT. SI ZE S. MATES WITH : 51102,51103 S E R I E S . A 3 iLtro+vc7®Kiaratn/Ka'®, -erofttosis

109007

Abstract: 79109-7014
Contextual Info: 10 NO TES: .079 2 .0 0 1. HOUSING M ATER IA L: LCP, G LA S S FILLED , UL 94V-0 COLOUR BLACK. - .044 + .003 .079 \ / / ROW in UJ ^ ^ .165 (4.19) ¿ Z I (2.00) JJ A 2. TERM IN AL M ATERIAL: PHOSPHOR BRONZE (1.12 ± 0.08) 3. S E E A P P R O P R IA T E S H E E T FOR CIRCUIT SIZE,

C5412

Abstract: BA56 Series
Contextual Info: NO TES: 1. All dimensions are in millimeters inches 2. T o le ra n c e is ± 0 .2 5 m m (0 .0 1 ") u n le s s o th e rw is e noted. 99 •SA/SC43 Series •SA/SC05 Series c = j = 3 —*CM ,0 0 .5 (0 .0 2 ) 7 .6 2 (0 .3 ) ¥ S C 4 3 -1 1 .-1 3 S A 4 3 - 1 1 ,-1 3

Contextual Info: 10 NO TES: 1. HOUSING M A T E R IA L : LC P , G L A S S F IL L E D , U L 9 4 V - 0 COLOUR B L A C K . - .0 4 4 1 .0 0 3 (1.12 ± 0.08 .0 7 9 2 . 00 ) 2. T E R M IN A L M A T E R IA L : P H O S P H O R BR O N ZE 3 . S E E A P P R O P R IA T E S H E E T FO R CIRCUIT S IZE ,

Contextual Info: A SP-19458-03 NO TES: 1. SHEAR POST TO .115. 2 . H E IG H T V A R IA T IO N BETW EEN A N Y TWO . 1 6 5 REF C O N T A C T A R E A 3. 4. 5. .2 3 0 Ì.0 0 8 ROWS S H A L L BE .0 0 5 M AX. P A R T S TO BE B U LK P A C K A G E D . T E R M IN A L P U S H O U T FORCE: 3 lb s .

Contextual Info: ISSI' IS 4 2 S 1 6 1 2 8 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

S29F010

Contextual Info: TMS29F010 131072 BY 8-BIT FLASH MEMORY ^ • ^ _ SMJS840-NOVEMBER 1997 ^ Single Power Supply FM PACKAGE TOP VIEW 5 V ± 10% • • • Organization . . . 131072 by 8 Bits Eight Equal Sectors of 16K Bytes - Any Combination of Sectors Can Be

27C301G

Abstract: HI1-200
Contextual Info: H N 27C 301G S e r le s 131072-word X 8-bit CMOS U .V . Erasable and Programmable ROM • FEATURES • Single Pow er S u p p l y . + 5 V ± 5 % • Fast H ig h -R e lia b ility Program M ode and Fast

tdq4-M

Abstract: HP 2231 IS42S16128
Contextual Info: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

Contextual Info: HN27C301P/FP Series— 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C301P/FP Series are in the " 1 " state output high .

IS42S16128

Contextual Info: ISSI' I S 4 2 S 1 6 1 2 8 _ 256K X 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

TSR 1-2450

Abstract: TMR 6-2411WI 12-0-12 transformer 500ma TRACOPOWER ten 5-1211 TEN 3-1213 TRACO POWER traco tma 1212d traco ten5 application note TSR 3-2450 tmr2e TEP-160
Contextual Info: Company Profile TRACO ELECTRONIC AG is a Swiss company with headquarter based in Zurich, Switzerland. As a leading power supply specialist with more than 30 years of experience we are dedicated to the design and manufacturing of high quality DC/DC and AC/DC

Contextual Info: ISSI' IS 4 2 S 1 6 1 2 8 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as

SD-84729-006

Contextual Info: 12 13 M ATERIAL NO. 84-7290003 84729 000 4 84-7290005 84-7290000 84-7290007 84-7290008 84-7290011 10 LENGTH 6.00 IN +.47 -0 152.0mm +12-0 31.88 IN +1.00-0 ( 810.0mm + 25.4-0 ) 51.57 IN +1.00-0 ( 1310.0mm + 25.4-0 ) 81.89 IN +1.57-0 ( 2080.0mm + 40.0-0 )

F0501

Abstract: MB85R1001 MB85R1001PFTN
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-2E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

72V263

Abstract: 72V273 72V293 JMAR Semiconductor
Contextual Info: Preliminary Data Sheet J72V263….16,384 x 9 Bits or 8,192 x 18 Bits J72V273….32,768 x 9 Bits or 16,384 x 18 Bits J72V283….65,536 x 9 Bits or 32,768 x 18 Bits J72V293….131,072 x 9 Bits or 65,536 x 18 Bits VeloSync+TM High Performance 9 or 18 Bit Wide 3.3V Synchronous FIFO

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-4E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-1E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

F0501

Abstract: MB85R1002 MB85R1002PFTN
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-1E Memory FRAM CMOS 1 M Bit 64 Kx16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

TDA1310A

Abstract: TDA1310AT
Contextual Info: Philips Semiconductors Preliminary specification Stereo Continuous Calibration DAC CC-DAC TD A 1310A FEATURES GENERAL DESCRIPTION • Space saving package DIL8 or SOS The TDA1310A is a device of a new generation of Digital-to-Analog Converters (DACs) which embodies the

MB85R2001

Abstract: MB85R2001PFTN-GE1
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.