MB85R1002PFTN Search Results

MB85R1002PFTN Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MB85R1002PFTN		Fujitsu	NVRAM, FRAM, Parallel, 3.3V Supply Voltage, 48-Pin	Original	PDF	96.19KB	12
MB85R1002PFTN-GE1		Fujitsu	Memory FRAM CMOS 1 M Bit (64 K x 16)	Original	PDF	367.8KB	15

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FUJITSU Limited


FUJITSU Limited MB85R1002PFTN-E1
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Chip-Germany GmbH	MB85R1002PFTN-E1		116			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MB85R1002PFTN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-6E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	DS05-13104-6E MB85R1002 MB85R1002	PDF
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-5E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	DS05-13104-5E MB85R1002 MB85R1002	PDF
F0501 Abstract: MB85R1002 MB85R1002PFTN Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-1E Memory FRAM CMOS 1 M Bit 64 Kx16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS05-13104-1E MB85R1002 MB85R1002 F0501 F0501 MB85R1002PFTN	PDF
MB85R1002 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-3E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	DS05-13104-3E MB85R1002 MB85R1002 F0708	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	DS05-13104-2E MB85R1002 MB85R1002 F0701	PDF
PSEUDO SRAM Abstract: MB85R1002 din 3102 Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	DS05-13104-4Ea MB85R1002 MB85R1002 PSEUDO SRAM din 3102	PDF