TELIC Search Results

STD-32

Abstract: STD32 TELIC VDE0711 antenna specialists 134 Power PCB Relays Sim card PIN CLIP-4 SIM 900 file attachment email AT COMMANDS imei
Contextual Info: Manual Page 1-34 Telic STD 32 Telic GmbH – Internet: www.telic.de; E-mail: info@telic.de Version 03/09 1

GSM project

Abstract: interfacing gps gsm Opto-Sensor gps mobile tracking system GPS gprs GSM alarm system GSM communication projects GSM project circuit TELIC car alarm sensor
Contextual Info: Features: Telic Picotrack - the miniaturized, ultra-small, and compact live GSM / GPRS / GPS Tracking & Tracing Device GSM / GPRS /GPS integrated Ultra Small Size – only 30 grams Quad Band Stand-alone Unit incl. GSM / GPS Antenna and Rechargeable LiPolymer Battery

ITT 435-1

Contextual Info: S iW H S electronic June 1992 HM 65798 HI-REL DATA SHEET_ 64 k x 4 HIGH SPEED CMOS SRAM FEATURES . TTL COMPATIBLE INPUTS AND OUTPUTS • FAST ACCESS TIME : 25*/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE: 660 mW STANDBY : 190 mW . WIDE TEMPERATURE RANGE : - 55°C TO + 125°C

303F

Abstract: PDIP28 U637256 ZMD AG
Contextual Info: U637256 CapStore 32K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U637256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MCM6246/D SEMICONDUCTOR TECHNICAL DATA MCM6246 512K x 8 Bit Static Random Access Memory Freescale Semiconductor, Inc. The MCM6246 is a 4,194,304 bit static random access memory organized as 524,288 words of 8 bits. Static design eliminates the need for external clocks or

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM32515/D SEMICONDUCTOR TECHNICAL DATA Advance Information Freescale Semiconductor, Inc. 512K x 32 Bit Fast Static RAM Module The MCM32515 is a 16M bit static random access memory module organized

DS3235

Abstract: DS3600 DS3235-1 PNC11 P10C68 P11C68 PNC10C68 PNC11C68
Contextual Info: s» 5 Ë GEC PLESSEY MARCH 1993 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 3 6 0 0 - 1 .5 P 1 0 C 6 8 /P 1 1 C 6 8 Previously PNC10C68 and PNC11C68 CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM (Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)

Plastic 32-pin 300 mil SOIC

Abstract: STK14C88-345 303F STK14C88-3
Contextual Info: STK14C88-3 32K x 8 AutoStore nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • “Hands-off” Automatic STORE with External 68µF Capacitor on Power Down • STORE to EEPROM Initiated by Software or AutoStore™ on Power Down

STK14C88

Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
Contextual Info: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems

PDIP28

Abstract: U631H16 ZMD AG
Contextual Info: U631H16 SoftStore 2K x 8 nvSRAM Features ! High-performance CMOS nonvola! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable

Matra-Harris Semiconductor

Abstract: MATRA MHS HMT "18-Pin LCC" MATRA-HARRIS HM3-65756 matra harris
Contextual Info: I 75 foO^f HM «5747 /1ATRA-HARRIS SEMICONDUCTOR 4K x 1 HIGH SPEED CM#S SRAM Q JA N U A R Y 1987 Features • • • • • • • • • Pinout HIG H S P E E D , F A S T A C C E S S T IM E : 2 5 /3 5 /4 5 ns A S Y N C H R O N O U S IN P U T S S T A N D B Y C U R R E N T : 1 0 m A m ax

STK11C68-SF45I

Abstract: STK11C68-SF45 stk11c68sf45
Contextual Info: STK11C68 Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance ■ Automatic RECALL to SRAM on power up ■ Unlimited RECALL cycles

STK22C48-NF

Abstract: stk22c48-nf45i
Contextual Info: STK22C48 16 Features Functional Description • 25 ns and 45 ns access times ■ Hands off automatic STORE on power-down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore™ on power-down

PLCC32

Abstract: U630H16 U630H16PA35 GR47 all stk ic diagram
Contextual Info: U630H16PA35 HardStore 2K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In

STK25C48

Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs

303F

Contextual Info: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 35 and 45 ns Access Times ‡ 15 and 20 ns Output Enable Access Times ‡ ICC = 8 mA typ. at 200 ns Cycle

Contextual Info: himMMS March 1994 HM 65788 DATA SHEET_ 16 K x 4 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME COMMERCIAL: 15/20/25/35/45 ns INDUSTRIAL/MILITARY : 20/25/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE : 267 mW typ STANDBY: 75 mW(typ)

Contextual Info: HM 65788 MATRA MHS 16 K x 4 High Speed CMOS SRAM Introduction The HM 65788 is a high speed CMOS static RAM organized as 16384 × 4 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip

MATRA MHS HM* 28 pins SO pack

Contextual Info: HM 65799 MATRA MHS 64 K x 4 with OE High Speed CMOS SRAM Introduction The HM 65799 is a high speed CMOS static RAM organized as 65,536 × 4 bit. It is manufactured using MHS high performance CMOS technology. Access times as fast 20 ns are available with maximum

710b

Abstract: 6264C MCM6264C MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35
Contextual Info: MOTOROLA Order this document by MCM6264C/D SEMICONDUCTOR TECHNICAL DATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing

65756

Abstract: MHS 65756 L65756
Contextual Info: L 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM 3.3 Volt Description The L 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a

Contextual Info: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted

Contextual Info: U 63 5 H 2 5 6 SOFTWARE NONVOLATILE RECALL HARDWARE PROTECT A RECALL cycle of the EEPROM data into the SRAM is initiated with a sequence of READ operations in a manner similar to the STORE initiation. To initiate the RECALL cycle the following sequence of READ opera­

Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby