TELEFUNKEN RA 200 AMPLIFIER Search Results

transistor bf 254

Abstract: bf255 bf254 BF255C transistor BF 255 transistor NPN BF255 transistor marking ra
Contextual Info: Ö1C D TELEFUNKEN ELECTRONIC • fl^OOSb 0005163 M T * -J /-* / BF 254 • BF 255 ‘¡TilLilFyMDSliMl electronic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 254: General and controlled RF amplifier stages up to 100 MHz

BF184

Abstract: Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor
Contextual Info: filC D TELEFUNKEN E LE CT RONI C TTliUiiFyKlKllNl electronic • ÔTSOGTb OQDSlbô fi 7 = 3 /-/5 - BF184 ' CreativeTechnologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and controlled RF amplifier stages upt to 100 MHz Features: • Noise figure 3.S dB

J3005

Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
Contextual Info: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages

ec 8020

Abstract: Scans-0017843 telefunken 8020 EC8020
Contextual Info: Netzröhre für GW-Heizung indirekt gebeizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel _ p EC 8 0 2 0 . TELEFUNKEN , . . . L e .s tu n g s tr.o d e P o w e r t r io d e Für VHF- und UHF-Verstärker in Gitterbasisschaltung. For VH F and UHF amplifiers in grid grounded.

marking 822

Abstract: transistor IC 1557 b Telefunken u 257
Contextual Info: Temic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features •

Contextual Info: BAQ133.BAQ135 Vishay Telefunken Silicon Planar Diodes Features • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage

bf185

Abstract: telefunken ra 200 amplifier transistor bc 7-40 transistor bf 185 transistor marking c y
Contextual Info: Ö1C D TELEFUNKEN ELECTRONIC TUmiFtUlMKIKl electronic • fi^SOO'ib 0005172 T B F 185 7= 3/-/S— Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and RF amplifier stages up to 100 MHz Feature*: • Noise figure 4 dB Dimensions In mm

TRANSISTOR BC 814

Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Contextual Info: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with

telefunken ra 200 amplifier

Abstract: UBA 4001 BI474 EL3010 tube el 36 telefunken ra 100 telefunken ra 200 2X40 Telefunken tubes A-0601
Contextual Info: Netzröhre für GW-Heizung S Ä EL 3010 T E L E F UN K E N DC-AC-Heating L e is t u n g s p e n t o d e indirectly heated connected in parallel P o w e r p e n to d e Vorläufige technische Daten • Tentative data Z u v e rlä ssig k e it R e lia b ility

ECC803S

Abstract: telefunken ra 200 telefunken tubes
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel ECC803S TELEFUNKEN 6057 N F -D o p p e ltrio d e m it ge tre n n te n K a th o d e n A F-Tw in triod e w ith se p a ra te c a th o d e s Z u v e r lä ss ig k e it

Contextual Info: Temic BFS17A/BFS17AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator ap­

BF173

Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Contextual Info: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages

TT 2206 horizontal d

Abstract: tt 2206 horizontal TT 2206 5894 tube telefunken ra 200 amplifier 850 U01 5894 NSP2 tube 5894 QQE06-40
Contextual Info: Netzröhre fUr GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel 5894 Q Q E 06/40 TELEFUNKEN Doppel-Tetrode Twin-tetrode Doppel-Tetrode mit innerer Neutralisation für HF-Verstärker, Oszillatoren, Frequenzvervielfacher und Modulatoren.

temic 0675

Abstract: 7334
Contextual Info: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

MAR 641 TRANSISTOR

Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
Contextual Info: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

c3g tube

Abstract: UAG2 telefunken triode telefunken ra 200 telefunken tubes
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel T E | E E | | | | | I [ E | | IT « C O g P e n to d e fü r B r e it b a n d v e r s t ä r k e r P e n to d e fo r W id e - b a n d a m p lif ie r

TUBE ecc 40

Abstract: ECC8100 rg105 rundfunkrohren
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel ECC 8100 TELEFUNKEN D o ppeltriode Tw in trio d e G e tre n n te K atho den , System I mit Neutrodenschirm fü r C ascode-Schaltungen, O s z illa to re n , B reitban dverstärker.

527H

Abstract: D 1413 transistor S822T
Contextual Info: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

Contextual Info: BAQ33.BAQ35 VISHAY _ ▼ Vishay Telefunken Silicon Planar Diodes Features • Very low reverse current i \ Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 94 9371 Absolute Maximum Ratings

Contextual Info: Temic BFR182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. *" Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features

Contextual Info: Tem ic BFP182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. £ Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features

mar 618

Abstract: BFR93 transistor BFR93 Telefunken u 267 Marking A2 SOT-23 MAR 618 transistor
Contextual Info: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency R n I—J B .

Contextual Info: S858TA1 ym m f v Vishay Telefunken BIPMIC - Cascadable Silicon Bipolar Amplifier E le c tro s ta tic s e n s itiv e d e v ic e . O b s e rv e p re c a u tio n s fo r h a n d lin g . ^ M Applications G e n e ra l p u rp o s e 5 0 Q g a in b lo c k fo r n a rro w and b ro a d

yd 803

Abstract: yd 803 2 ECC803S ecc803 telefunken ra 200 yd 803 a telefunken tubes
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel W N mI A m jV ECC 803 S 6057 TELEFUNKEN N F-D o p p eltrio d e mit getrennten K athoden A F-Tw in triode with se p a rate cathodes Zuverlässigkeit