TEKELEC MTN Search Results

Design Considerations for the SST FlashFlex51 Family Microcontroller

Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
Contextual Info: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when

transistor Bc 949

Abstract: Oasis Nexus S SA 613 Nexus S camera
Contextual Info: Features and Performances of Reprogrammable Nonvolatile Byte-wide Floating Gate Memories Technical Paper Revised March 1999 1.0 INTRODUCTION Over the past 20 to 25 years, various floating gate devices have been increasingly used for reprogrammable nonvolatile memory NVM applications.

a1232

Abstract: STR 6267
Contextual Info: ÆDDI^ Sales Offices, Distributors & Representatives M arch 1995 Altera North American Regional Offices NORTHERN CALIFORNIA Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: 408 894-7900 FAX: (408)428-0463 Altera Bay Area Sales 2290 North First Street, #212

Contextual Info: i i l ì ic WORKS Preliminary ,BiJF W40S01 -04 100 MHz SDRAM Buffer Features Key Specifications • Eighteen skew controlled CMOS clock outputs SDRAM0:17 Supply Voltages: VDD = 3.3V±5% Operating Temperature: • Supports four SDRAM DIMMs 0°C to +70°C

WB1332

Abstract: titan b3 NSK oscillator KMC-184 1N1086 W1332I VBW10 Electro Source Tekelec airtronic nsk Crystal osc
Contextual Info: 1CWORKS WB1332-I Dual Serial Input PLL With 12 GHz and 510 MHz Prescalers INFORM ATION JUNE 1995 TH IS INFORMATION IS SUBJECT T O CHANCE UPON COMPLETION O F PRODUCT CHARACTERIZATION IC WORKS 3725 N. 1st STREET SAN JOSE, CA 95134 PH. 408-922-0202 FAX 408-922-0833

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

oasis

Abstract: 32-PIN A103 A114 A115 SST27SF020 90-3C-PH 2t926
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

Contextual Info: Preliminary ill# ICW 0RKS WB1332X Dual Serial Input PLL with 1.2GHz and 510MHz Prescalers Features Figure 1 • IC WORKS BiCMOS process Pin Diagram • Operating voltage 2.7V to 5.5V — LI Vcc2 • Operating frequency to 1,2GHz and 510MHz with inputs of - 1 5dBm and Vcc of 3.0V

chn 348

Abstract: CHN 314 chn 317 CHN 852 chn 440
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: Preliminary WB1310X ill# ICW 0RKS Dual Serial Input PLL with 1.2GHz Prescalers Features Figure 1 IC W O R KS BiCMOS process Pin Diagram Operating voltage 2.7V to 5.5V v cc1 Operating frequency to 1,2GHz with inputs of -1 5 d B m and V cc of 3.0V V P2 D0 PLL2

W49C65-04

Abstract: W49C65 intel core i3 MOTHERBOARD CIRCUIT diagram intel i3 MOTHERBOARD pcb CIRCUIT diagram CRYSTAL 12MH 430VX utah g 12 r
Contextual Info: Preliminary ill# IC WORKS W49C65-04 Dual DIMM System Clock Features Key Specifications Supply Voltages: Ideal Pentium /430V X / SDRAM clock Twelve CPU/SDRAM clock outputs CPU1:12 Supports two SDRAM DIMM sockets (4 clocks per DIMM) Six PCI clock outputs (PCI1:6)

SST39VF200-70-4C-EK

Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
Contextual Info: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention

W49C65

Abstract: 201575 TTL Schmitt-Trigger MOTHERBOARD pcb CIRCUIT diagram W49C65-04 Tekelec airtronic 513271 utah g 12 r
Contextual Info: Ill« ICWORKS Preliminary W49C65-04 Dual DIMM System Clock Features Key Specifications Supply Voltages: Ideal Pentiunf/ 430VX / SDRAM clock Twelve CPU/SDRAM clock outputs CPU1:12 Supports two SDRAM DIMM sockets (4 clocks per DIMM) Six PCI clock outputs (PCM :6)

TA 7644 BF

Abstract: oasis 32-PIN
Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512A – 3.0-3.6V for SST29LE512A – 2.7-3.6V for SST29VE512A • Superior Reliability

29VE010A

Abstract: SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29EE010A SST29LE010A SST29VE010A
Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010A – 3.0-3.6V for the SST29LE010A – 2.7-3.6V for the SST29VE010A • Superior Reliability

27721

Abstract: Actron diagram ta 306 oasis 29ee020
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020A – 3.0-3.6V for the SST29LE020A – 2.7-3.6V for the SST29VE020A • Superior Reliability

cmos power TCP 8108

Abstract: oasis TCP 8108 SST39VF400 jedec mo-142 dd
Contextual Info: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400 Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

TA 7644 BF

Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

NEXUS FLASH ERASE

Abstract: endrich oasis LH1605 A190 Carlo Gavazzi A1668
Contextual Info: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical)

AP 309

Abstract: oasis 28VF040 SST28LF040 SST28SF040 SST28VF040 0418 bd china SST28SF040-120-3C- EH
Contextual Info: 4 Megabit 512K x 8 SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST28SF040 – 3.0-3.6V for the SST28LF040 – 2.7-3.6V for the SST28VF040 • Superior Reliability

oasis

Abstract: 29VE020 SST29EE020 SST29LE020 SST29VE020 ms-1307
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020 – 3.0-3.6V for the SST29LE020 – 2.7-3.6V for the SST29VE020 • Superior Reliability

NEXUS FLASH ERASE

Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
Contextual Info: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program:

tekelec TA 355

Abstract: NEXUS FLASH ERASE oasis SST31LH103
Contextual Info: 1 Megabit Flash + 256 Kilobit SRAM ComboMemory SST31LH103 Advance Information FEATURES: • Organized as 64K x16 Flash + 16K x16 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations 2.7-3.6V without concurrent operation