ACTRON Search Results

powertip LCD 1602

Abstract: LCD 1602C powertip 1602 lcd 1602 connection OF LCD EL 1602 1602-C 1602 lcd 1602c lcd 1602 db
Contextual Info: Vertrieb elektronischer Bauelemente und Systeme GmbH Posthalterring 18 • 85599 Parsdorf bei München Tel: +49 89 991509-0 • Fax: +49 89 991509-50 e-mail: service@actron.de • www: www.actron.de POWERTIP PC 1602-C Series OUTUNE DIMENSION êc BLOCK DIAGRAM

EDI88128CS45CB

Abstract: EDI88128LPS25NB
Contextual Info: ^EDI EDI88128CS B actronle Designs Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabitdensity monolithic Static RAM organized as 128Kx8 bits. The device has eight bi-directional input-output lines to

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

TA 7644 BF

Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

Contextual Info: To: 16038801932 From: DocuFACTSitmJ Ph# 949-253-7438 Pomona 8-20-99 10:57am p. 9 o f 9 Model 5676 Replaceable Tip Probe Kit FEATURES: • Replaceable tips for versatility of test and measurement. • Sheathed Banana Plugs for mating to digital multimeters with double insulated jacks.

16KQ50

Abstract: 16KQ50B 16KQ60 16KQ60B T0247AC
Contextual Info: SCHOTTKY BARRIER DIODE 16KQ50 16KQ60 16KQ50B 16KQ60B i 6 . 6A / 50 ~ 60 v FEATURES 3 .6 U 4 2 . T T T T T R U iA »Similar to TO-247AC TO-3P) Case » Low Forward Voltage Drop ' Low Power Loss, High Efficiency » High Surge Current Capability »30 Volts and 100 Volts Types Available

houston tech

Abstract: pelco Taiwan Oasis Enterprise Co., LTD 221212 datasheet and application 7217 eprom UV eraser NEXUS FLASH ERASE oasis taiwan oasis SST superflash
Contextual Info: SST’s MTP Products A Superior Alternative to EPROM and Low Functionality Flash Application Note 1.0 Introduction MTP is a Many-Time Programmable low cost flash memory. The MTP combines the electrical erasability of flash and the cost effectiveness of EPROM. SST designed the MTP products, a low cost NVM, by reducing

actron ab

Abstract: 11a18 CHN 949 VF800
Contextual Info: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention

CHN 602

Abstract: CHN 847
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020

SST39VF200-70-4C-EK

Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
Contextual Info: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention

CHN 847

Abstract: chn 734
Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption

Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

QFP 87c51

Abstract: intel 87C51 INSTRUCTION SET Taiwan Oasis Enterprise Co., LTD SST89C59 Atmel 8051 Microcontrollers SST89C54-33I-NJ-XXXX LQFP-44 PLCC-44 SST89C54 SST89C58
Contextual Info: FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 Preliminary Specifications FEATURES: • Multi-Purpose 8-bit 8051 Compatible Microcontroller Unit with Embedded SuperFlash Memory for Flexibility • Three 16-bit Timer/Counter • Programmable Serial Port UART

DRM008

Abstract: small burglar alarm project r2x transistor SMD RELAY pk5 PROJECT report OF SHADOW SENSOR ALARM PROJECT DOCUMENTATION OF SHADOW ALARM alps rotary Encoder burglar alarm using melody generator DIPTRONICS DATE CODE p131 smd relay
Contextual Info: Alarm Control Panel Reference Design Designer Reference Manual HCS12 Microcontrollers DRM008/D Rev. 0, 11/2002 MOTOROLA.COM/SEMICONDUCTORS Alarm Control Panel Reference Design Designer Reference Manual — Rev 0 by: Oliver Thamm c/o Elektronikladen Mikrocomputer GmbH

Design Considerations for the SST FlashFlex51 Family Microcontroller

Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
Contextual Info: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Ff-352

Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
Contextual Info: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •

TEKELEC te 306

Abstract: 30601
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A

MBR40200

Abstract: MBR40150 MBR10B100FCTH MBR20B100FCTH SB3200 SB3150 MBR20B150FCTH MBR20200PT MBR20B100FCT MBR50100PT
Contextual Info: s SirectSemi N g g P Green Product Copyright 2009 Sirectifier Global Corp. All Right Reserved Barrier & Breakdown Voltage V B Electronic Characteristics (V F @ 125°C & IR @ 25°C) Pt (Platinum) Barrier, 45-200V Highest Tj (150-175°C) and lowest I R (less than 10 A)

oasis

Abstract: 29VE020 SST29EE020 SST29LE020 SST29VE020 ms-1307
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020 – 3.0-3.6V for the SST29LE020 – 2.7-3.6V for the SST29VE020 • Superior Reliability

CHN 345 X

Contextual Info: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

29EE010

Abstract: CI 7446 29LE010 SST29EE010 SST29LE010 SST29VE010 29EE010-120 29EE010-90 Taiwan Oasis Enterprise Co., LTD
Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE010 – 3.0V-only for the 29LE010 – 2.7V-only for the 29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)