TE SUPERSOT 6 Search Results

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

B4t diode surface mount

Abstract: C05S 702 TRANSISTOR sot-23 S-108 NDS331N supersot-3
Contextual Info: J u ly 1 9 9 6 N ational < ß Semiconductor" NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode po w e r fie ld effect tran sisto rs are produced using Nationals proprietary, high cell density, DMOS

Contextual Info: KSD2058 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO -22 0 F ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO Sym bol 60 V C ollector E m itter Voltage VcEO 60 V Em itter Base Voltage V ebo 7

Contextual Info: LM336-2.5/B/LM236-2.5 KA336-2.5, KA236-2.5 PROGRAMMABLE SHUNT REGULATOR PROGRAMMABLE SHUNT REGULATOR T h e L M 3 3 6 -2 .5 /B in te g ra te d C irc u its a re p re c is io n 2 .5 V s h u n t re g u la to rs . T h e m o n o lith ic 1C v o lta g e re fe re n c e s o p e ra te s a s a lo w

Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.

Contextual Info: POWER RECTIFIER SDS06U150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=120nS Low VF in Turn on (VF=1,4V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded

Contextual Info: D iscrete POWER & Signal Technologies 1R O H I 1ILtQI ^ M IC W J C R J C T D P i m MPS8550 C TO-92 BE PNP General Purpose Amplifier T his device is designed for general purpose audio am plifier appli cations at collector currents to 500 mA. Sourced from Process 60.

Contextual Info: S E M IC O N D U C T O R tm BC817-25 BC817-40 Mark: 6B./6C. NPN General Purpose Amplifier T his device is designed for general purpose m edium power am plifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum RâtinÇjS

Contextual Info: KSB906 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low C ollector Em itter Saturation Voltage • C om plem ent to KSD1221 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO Sym bol -6 0 V C ollector Em itter Voltage

1N4728A - 1N4752A

Abstract: zener 1N4752A 1N4700A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A
Contextual Info: Absolute Maximum Ratings* Tolerance: A = 5% TA = 25°C unless otherwise noted P a ra m e te r V a lu e U n its -6 5 to + 2 0 0 °C M a x im u m J u n c tio n O p e ra tin g T e m p e ra tu re + 200 °C L e a d T e m p e ra tu re 1 /1 6 ” fro m c a s e fo r 1 0 s e c o n d s

2N5486

Abstract: BF5484 2n5485 2N5484 transconductance 2N5485
Contextual Info: M IC Ü N D U C T Q R ^ MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 Mark: 6B / 6M / 6H N-Channel RF Amplifier T his device is designed prim arily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

Contextual Info: MBR3035PT F A IR C H IL D SEM IC O N D U C TO R MBR3035PT - MBR3060PT Lo w p o w e r loss, h ig h e ffic ie n c y . 0.245 6.2 0.225(5.7) High s u rg e capacity. 0.323(8.2) 0.313(7.9) 0.078(1.98 ^ iO0 ^ - " r For use in lo w vo lta g e , high fre q u e n c y

Contextual Info: S E M IC O N D U C T O R tm ES3A - ES3D Features • 0 .2 8 0 7.112 0.260 (6 .604 ) For surface mount applications. ^ • Glass passivated junction. • Low profile package. ^ j j r • Easy pick and place. • Built-in strain relief. S M C /D O -2 1 4 A B

NDC7003P

Abstract: 034A
Contextual Info: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: S E M IC O N D U C T O R tm BCW68G Mark: DG PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted

Contextual Info: E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1P B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

2n5087

Abstract: 2N5086 BT5086 2N5087 equivalent
Contextual Info: S E M IC O N D U C T O R tm 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.

Ksp44 data

Abstract: KSP44
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSP44/45 HIGH VOLTAG E TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo=KSP44: 400V KSP45: 350V • C ollector D issipation: Pc m ax =625m W ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic C ollector Base Voltage

m005m

Abstract: 3n2532kbp10
Contextual Info: 0.125 X 45O 3.2 Typ 0.600 (15.2) 0.560 (14.3) Features 0.460 (11.7) 0.420 (10.7) • Surge overload rating: 60 amperes peak. • Reliable low cost construction utilizing molded plastic technique. + ~ 0.500 Min (12.7) 0.160 (4.1) 0.140 (3.6) 0.060 Typ (1.52)

Contextual Info: SEM ICONDUCTOR tm FSBCW30 SuperSOT -3 PNP General Purpose Amplifier T his device is designed for general purpose m edium power am plifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum RâtinÇjS

Contextual Info: IRFR310 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 3 .6 Q 1 .7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

Contextual Info: FDC5612 May 1999 FAIRCHILD EMICONDUCTOR tm FDC5612 60V N-Channel PowerTrench MOSFET General Description Features T h is N -C h a n n e l M O S F E T has b e e n d e s ig n e d specifically to im prove the overall efficiency of DC/DC converters using either synchronous or conventional

Contextual Info: H C H BC857A / BC857B / BC857C F /M I L D S E M IC O N D U C T O R BC857A BC857B BC857C SOT-23 ’ B M a rk : 3 E / 3 F / 3 G PNP General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 68.