TD 3101 N Search Results

intel 3101

Abstract: LA 3101 A 3101 8 pin intel i5 3101A High Speed RAM intel+3101
Contextual Info: in tei Fast Access Time — 35 nsec max over 0-75°C Temperature Range 3101 A <•! ' t - ' OR-Tie Capability — (Open Collector, Outputs Fully Decoded — on Chip Address Decode and Buffer Simple Memory Expansion through Chip Select Input — 17 nsec max over

Contextual Info: T M S 3101 LC, N C - D U A L 100-BIT S T A T I C S H IF T RE G I S T ER T M S 3102 LC. N C - D U A L 80-BIT STA TI C S H I F T R E G I S T E R T M S 3103 LC, N C - D U A L 64-BIT S T A T I C S H IF T R E G I S T E R features • £ DC to 2.5-M H z operation

Contextual Info: 8MA 08M Connactora_ For 8aml*Rlgld Cabla and Printed Clroult Mount MIL-C-39012/92 _L_ \l — r(HM) 38 M ilita ry Part N u ra a r 13801 •3001’ •3 0 0 1 1 *•3 10 1 *•3 1 0 1 ’ *■ 3101' -3201’ *•3301’ pMSELr O utllna

LA 3101 ic

Abstract: TCM3101 LA 3101
Contextual Info: TCM 3101 FSK MODEM D 2 8 6 6 , AU G U ST 1 9 8 5 — REVISED FEBRUARY 1 9 8 6 j NO T REC OM M ENDED FOR NEW DESIGN DUAL-IN-LINE PACKAGE TOP VIEWI For n e w design, refer to T C M 3 1 0 5 vdd C CLK £ 2 CDT [ I 3 RXA £ 4 description TRSC 5 The T C M 3 1 0 1 is a single-chip asynchronous

Contextual Info: GENERAL SEMICONDUCTOR TÉ dF 72C 01935 3918590 GENERAL S EM IC O ND UC TOR General 2p" Sem iconductor Industries, Ine . | BTiaSÍO O D O n 3 5 S J ~ O r - 33 -^ s q U H R E T Ì COMPANY T y p ic a l D evice Types: 2 N 6 92 2, 2N 6923 25-60 AMP Ultra Fast

2SK1815

Abstract: DDD310G A2245
Contextual Info: 2SK1815 S IP M O S F U J I P O W E R M O S -F E T N-CHAIMIMEL SILICON POWER MOS-FET _ - TTT ^ r ­ r-111 o tr i I to • Features Outline Drawings • High current • Low no-resistance • N o secondary breakdow n • Low driving p o w e r

Contextual Info: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ

Contextual Info: 2N4150S Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ • JANTX level (2N4150SJX)

2N4150

Abstract: 2N4150J 2N4150JV 2N4150JX
Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

2N4150S

Abstract: 2N4150SJ 2N4150SJV 2N4150SJX
Contextual Info: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ

Contextual Info: Tem ic SÌ9925DY Se m ic o n d u c to r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 rDS(on) (Q ) I d (A) 0.05 @ Vqs = 4.5 V ±5.0 0.06 @ VGs = 3.0 V ±4.2 0.08 @ Vos = 2.5 V ±3.6 u D2 D2 1 U SO-8 Si [ T ~8~1 D, Gì T 1 G l D, Ï1 0 —

td 3101 n

Contextual Info: r& T O K O TK11900 ADJUSTABLE LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Supply Current ■ Portable Instrumentation ■ Low Power Shutdown Mode ■ Cordless Telephones ■ Low Noise Output ■ Pagers ■ Low Drop Out Voltage ■ Toys ■ Extremely Small Package

MAGNUM METAL LOCATOR

Abstract: 09 67 000 9973 HARTING UpRight SP 37 HC 741 DIN 60352-2 19 PIN CIRCULAR push pull CONNECTORS d-sub harting DIN EN 60352-2 contact resistance circular connector M12-RJ
Contextual Info: HARTING Electric News 2004 People | Power | Partnership Subsidiary companies – worldwide Austria HARTING Ges. m. b. H. Deutschstraße 3, A-1230 Wien Phone +43 1 / 6 16 21 21 Fax +43 1 / 6 16 21 21-21 E-Mail: at@HARTING.com Belgium HARTING N.V. / S.A. Doornveld 8, B-1731 Zellik

Contextual Info: CY7C271 CY7C274 CYPRESS SEMICONDUCTOR 32,768 x 8 PROM Power Switched and Reprogrammable Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns commercial — 55 ns (military) • Low power — 660 mW (commercial)

Contextual Info: MA3005S10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3005S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

2E12

Abstract: FSF055D FSF055D1 FSF055D3 FSF055R FSF055R1 FSF055R3
Contextual Info: FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 60V, rDS ON = 0.020Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: MA3005N30000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3005N3 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

MA3005

Contextual Info: MA3005M30000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3005M3 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Bucket Brigade

Abstract: MN3011 MN3004 MN3101 mn3101 cross MN3004 MN3011 23/Bucket Brigade
Contextual Info: Issued March 1988 008-509 Data Pack J Data Sheet Bucket brigade delay lines RS stock numbers 631-288 to 301 The RS bucket brigade delay line system comprises two delay lines and a matching clock driver. Introduction to the bucket-brigade delay line To characterise an analogue signal of f hertz completely, at least 2f samples per second are needed. If

Contextual Info: AT27LV010A Features • • Fast Read Access Tim e - 90 ns Dual Voltage Range Operation Low Voltage Power Supply Range, 3.0V to 3.6V or Standard 5V ± 10% Supply Range Com patible with JEDEC Standard AT27C010 Low Power CMOS Operation 20 |^A max. less than 1 j_iA typical Standby for Vcc = 3.6V

Contextual Info: FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A, 60V, ros ON = 0-020S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

AD588AD

Abstract: AD588JN AD588KN AD588CD D588A 588-AD d588 588J AD588BD 588T
Contextual Info: ANALOG DEVICES Ultra High Precision Voltage Reference AD588 FEATURES A D 588 F U N C T IO N A L B L O C K D IA G R A M Ultra Low Drift - 1ppm/°C Ultra Low Initial Error - 1mV Pin-Programmable Output + 10V, + 5 V , ± 5 V Tracking, - 5 V , - 1 0 V Flexible Output Force and Sense Terminals