TD 3101 N Search Results

ptb 99 atex 3128 x

Abstract: ptb 99 atex 3101 atex 3128 M20-M63 ghg 748 99-ATEX M12-M16 PTB 99 ATEX ptb 99 atex 3128 Nut M63
Contextual Info: 78-79.qxp 8/11/2010 10:41 AM Page 79 Ex-i International Standards Flameproof and Increased Safety IP66 Sizes M12-M16: PTB 99 ATEX 3101 X Sizes M20-M63: PTB 99 ATEX 3128 X IECEx 4F 4F Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances:

intel 3101

Abstract: LA 3101 A 3101 8 pin intel i5 3101A High Speed RAM intel+3101
Contextual Info: in tei Fast Access Time — 35 nsec max over 0-75°C Temperature Range 3101 A <•! ' t - ' OR-Tie Capability — (Open Collector, Outputs Fully Decoded — on Chip Address Decode and Buffer Simple Memory Expansion through Chip Select Input — 17 nsec max over

Contextual Info: T M S 3101 LC, N C - D U A L 100-BIT S T A T I C S H IF T RE G I S T ER T M S 3102 LC. N C - D U A L 80-BIT STA TI C S H I F T R E G I S T E R T M S 3103 LC, N C - D U A L 64-BIT S T A T I C S H IF T R E G I S T E R features • £ DC to 2.5-M H z operation

shift register ttl

Abstract: A 3101 8 pin td 3101 n D021 PW02 SN74I
Contextual Info: T M S 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER T M S 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER T M S 3103 LC, N C -DUAL 64-BIT STATIC SHIFT REGISTER features • > z DC to 2.5-M H z operation • Low power dissipation § 3 „•< • D irect interface w ith D T L /T T L

Contextual Info: SPECIFICATION CONTROL DRAWING 1. MATING INTERFACE DIMENSIONS FOR PLUG PER MIL-STD-34B Fig. 310-1 AND DYNAWAVE MD-9B. 2. ELECTRICAL DC TO 26.5 GHz. 1.05 + .005 x FGHz. .03 dB x 7 FGHz. 50 335 FREQUENCY RANGE GHz VSWR (M A X ) * -INSERTION LOSS (d B M AX) * NOMINAL IMPEDANCE (O H M S )VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB D OW N)-TEMPERATURE RATING (DEGREES CENTIGRADE)-DIELECTRIC WITHSTANDING VOLTAGE (MAX VRMS)

Contextual Info: 8MA 08M Connactora_ For 8aml*Rlgld Cabla and Printed Clroult Mount MIL-C-39012/92 _L_ \l — r(HM) 38 M ilita ry Part N u ra a r 13801 •3001’ •3 0 0 1 1 *•3 10 1 *•3 1 0 1 ’ *■ 3101' -3201’ *•3301’ pMSELr O utllna

LA 3101 ic

Abstract: TCM3101 LA 3101
Contextual Info: TCM 3101 FSK MODEM D 2 8 6 6 , AU G U ST 1 9 8 5 — REVISED FEBRUARY 1 9 8 6 j NO T REC OM M ENDED FOR NEW DESIGN DUAL-IN-LINE PACKAGE TOP VIEWI For n e w design, refer to T C M 3 1 0 5 vdd C CLK £ 2 CDT [ I 3 RXA £ 4 description TRSC 5 The T C M 3 1 0 1 is a single-chip asynchronous

Contextual Info: GENERAL SEMICONDUCTOR TÉ dF 72C 01935 3918590 GENERAL S EM IC O ND UC TOR General 2p" Sem iconductor Industries, Ine . | BTiaSÍO O D O n 3 5 S J ~ O r - 33 -^ s q U H R E T Ì COMPANY T y p ic a l D evice Types: 2 N 6 92 2, 2N 6923 25-60 AMP Ultra Fast

2SK1815

Abstract: DDD310G A2245
Contextual Info: 2SK1815 S IP M O S F U J I P O W E R M O S -F E T N-CHAIMIMEL SILICON POWER MOS-FET _ - TTT ^ r ­ r-111 o tr i I to • Features Outline Drawings • High current • Low no-resistance • N o secondary breakdow n • Low driving p o w e r

Contextual Info: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ

Contextual Info: 2N4150S Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ • JANTX level (2N4150SJX)

2N4150

Abstract: 2N4150J 2N4150JV 2N4150JX
Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

G20N120E2

Abstract: AN7254 AN7260 HGTG20N120E2 LD26
Contextual Info: HGTG20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss

Contextual Info: Tem ic SÌ9925DY Se m ic o n d u c to r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 rDS(on) (Q ) I d (A) 0.05 @ Vqs = 4.5 V ±5.0 0.06 @ VGs = 3.0 V ±4.2 0.08 @ Vos = 2.5 V ±3.6 u D2 D2 1 U SO-8 Si [ T ~8~1 D, Gì T 1 G l D, Ï1 0 —

IMBT3904

Abstract: ITT INTERMETALL
Contextual Info: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.

td 3101 n

Contextual Info: r& T O K O TK11900 ADJUSTABLE LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Supply Current ■ Portable Instrumentation ■ Low Power Shutdown Mode ■ Cordless Telephones ■ Low Noise Output ■ Pagers ■ Low Drop Out Voltage ■ Toys ■ Extremely Small Package

Contextual Info: Square ended SMD 500 mWatt Voidless zeners 1N6321US thru 1N6355US Hard GlassTungsten MELF "D" Package nJ - Applications Low noise zener diodes with hard glass tungsten, non-rolling SMD design. Able to replace less robust families like1N4099and 1N5530B. Forusein hostile environments and

IRF250

Abstract: IRF252
Contextual Info: HE 0 I 4ÖSS45S G G C m i a Data Sheet No. PD-9.321H ö I INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF250 IRF251 IRF252 IRF253 N-CHANNEL Product Summary 200 Volt, 0.085 Ohm HEXFET

DIODE MOTOROLA B33

Abstract: TMOS Power FET mtd2n50-1 369A-10 AN569 MTD2N50 N250 td 3101 n
Contextual Info: M O T O R O L A SC X S T R S / R F bflE D b3b?5S4 D O W N TTfl • MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2N50 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silico n Gate D PA K for Surface Mount or Insertion Mount

MAGNUM METAL LOCATOR

Abstract: 09 67 000 9973 HARTING UpRight SP 37 HC 741 DIN 60352-2 19 PIN CIRCULAR push pull CONNECTORS d-sub harting DIN EN 60352-2 contact resistance circular connector M12-RJ
Contextual Info: HARTING Electric News 2004 People | Power | Partnership Subsidiary companies – worldwide Austria HARTING Ges. m. b. H. Deutschstraße 3, A-1230 Wien Phone +43 1 / 6 16 21 21 Fax +43 1 / 6 16 21 21-21 E-Mail: at@HARTING.com Belgium HARTING N.V. / S.A. Doornveld 8, B-1731 Zellik

Contextual Info: CY7C271 CY7C274 CYPRESS SEMICONDUCTOR 32,768 x 8 PROM Power Switched and Reprogrammable Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns commercial — 55 ns (military) • Low power — 660 mW (commercial)

Contextual Info: MA3005S10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3005S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter