TCS 1002 Search Results

tms320tci6488 evm

Abstract: TMS320TCI6488 ddr2 ram
Contextual Info: Application Report SPRAB57—June 2009 TMS320TCI6488 Memory Access Performance Communication Infrastructure Brighton Feng Abstract The TMS320TCI6488 has three C64x+ cores, each of which has 32KB L1D SRAM, 32KB L1P SRAM, 3MB L2 SRAM and can be configured as 1MB/1 MB/1 MB or 1.5

MBM30AL0064

Abstract: NAND FLASH BGA MB84VN23381EJ-90
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) NAND-Type FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VN23381EJ-90 • FEATURES — NAND-Type FLASH MEMORY • Operating Voltage:2.7V to 3.3V

schneider 3 phase monitoring relay

Contextual Info: Maximize protection MiCOM series 10, 20, 30, 40 Comprehensive range of digital protection relays Make the most of your energy Increase energy availability Maximize energy availability and the profits generated by your installation while protecting life and property.

92121

Abstract: 92121 001 HFBR-5103 S2100 09q25
Contextual Info: >4MCC PRELIMINARY DEVICE SPECIFICATION 100VG-AnyLAN STP/FIBER OPTIC TRANSCEIVER FEATURES • • • • • • • • • S2100 DESCRIPTION IEEE 802.12 compliant Full Duplex Capability Single +5 V supply STP or Fiber support Fixed receiver based equalization

527h

Abstract: FPT-44P-M08 MBM30LV0064
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-4E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

527H

Abstract: FPT-44P-M08 MBM30LV0032
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-4E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store

FPT-44P-M08

Abstract: MBM30LV0032
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-2E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store

20885

Abstract: 50REF FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-1E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

FPT-44P-M08

Abstract: MBM30LV0064
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-3E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

526h

Abstract: FPT-44P-M08 MBM30LV0032
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-3E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store

FPT-44P-M08

Abstract: MBM30LV0064 BGA-52P-M01
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

50REF

Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

chip resistor

Contextual Info: TOKEN 晶片電阻 貼片電阻 片式電阻 Chip Resistors 德鍵電子工業股份有限公司 台灣 : 台灣省台北縣五股鄉中興路一段 137 號 電話 : +886-2-29810109 ； 傳真 : +886-2-29887487 大陸 : 广东省深圳市南山区创业路中兴工业城综合楼十二楼

load cell rohs 500g

Abstract: EIA1210 1003 smd resistor FCR 06 eia0603 FCR05 RCA03-4D TDA 2010 AR06 eia0402
Contextual Info: TOKEN CHIP RESISTORS Surface Mount Chip Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong

Contextual Info: TOKEN CHIP RESISTORS Surface Mount Chip Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong

KM44C1002

Abstract: KM44C1002-8
Contextual Info: CMOS DRAM KM44C1002 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

a3568

Abstract: S-80141ALMC aplication notes w25q32b quanta 6320 XL710 26 Pin GPIO Connector Header Extender 90 Degree Angle TXAL 228 B
Contextual Info: Intel Ethernet Controller XL710 Datasheet Networking Division ND Revision: 2.1 December 2014 Legal Lines and Disclaimers No license (express or implied, by estoppel or otherwise) to any intellectual property rights is granted by this document. Intel disclaims all express and implied warranties, including without limitation, the implied warranties of merchantability, fitness for a

MB82D01160-90LPBT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01160-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface n DESCRIPTION

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Low Power SRAM Interface FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01171A-90/-90L/-90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11404-1E MEMORY Low Power SRAM Interface FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01171A-90/-90L/-90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface

85lp

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11405-1E MEMORY Mobile FCRAM CMOS 16Mbit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/85L/90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface

F0110

Abstract: 004C2000
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •

TC511002A

Contextual Info: .1 TENTATIVE D AT A 1 ,048,576 W O R D x 1 BIT D Y N A M I C R A M DESCRIPTION The TC511002A P/A J/A Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002A P/A J/A Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced

SGA29

Abstract: 32-KW Load Bank SA133 MBM29DL640E SA72 SA136
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50301-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x ×16) FLASH MEMORY & 16 M (× ×16) Mobile FCRAMTM MB84VD23381EF-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.0 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash