TCH7E50 Search Results

Contextual Info: TOSHIBA {¡DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO DE I TCH7E50 0D17CH3 5 | ~ 99D 17093 D'T-4I-5( TLO 2 0 0 GaAsP ORANGE LIG H T EMISSION FEATURES: . ¿20 Large Size tamp Consist of 6 Chips . Low Drive Current, High Intensity Orange Light Emission

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D • TGTTESD 001ÔD02 3 «TOSM TOSHIBA V m Q f l f i SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 'T FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES:

Contextual Info: TOSHIBA' {DISCRETE/OPTO} 9097250 TOSHIBA ¿ f o iiu h a TO DISCRETE/OPTO DE I TCHTSSO ODlbBET 3 90D SEMICONDUCTOR 16329 DT-33-3^ TOSHIBA CTR MODULE 'MG50M2CK2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: TIM1213-8L FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN IM3 = - 4 5 dBc at Po = 28 dBm, G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz Single Carrier Level ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, - Single carrier level • High power - P-|dB = 39 dBm at 6.4 GHz to 7.2 GHz

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2057 Field Effect Transistor Industrial A p p lica tio n s Unit in m m Silicon N Channel MOSType fc-MOS IV High Speed, High Current Switching Applications 15-9MAX ¿32+0.2 Fea tu res • Low Drain-Source ON Resistance ' r DS ON) = 0.24S2 (Typ.)