TCE 1992 Search Results

TCP 8126

Contextual Info: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are

MB98A80813

Abstract: PCMCIA Flash Memory Card 512K
Contextual Info: \_pril 1992 Edition 2.0 FUJITSU DATA SHEET MB98A8081X- / 8091x- / 8101x- / 8111x-20 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 256K / 512K / 1 M / 2M-BYTE The Fujitsu MB98A8081x, MB98A8091x, MB98A8101x and MB98A8111x are Flash electrically eraseable and programmable Flash memory cards capable of

MB832000A

Abstract: MB832000 A831D MBM27C2001
Contextual Info: September 1992 Edition 1.0 FUJITSU DATA SHEET MB832000A CMOS 2M-BIT MASK READ ONLY MEMORY 256K x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB832000A is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 8 bits. The MB832000A has TTL-compatible I/O and 3-state output level with fully-static

Contextual Info: rO January 1992 Edition 2.0 FUJITSU DATA SHEET MB838200A CMOS 8M-BIT MASK READ ONLY MEMORY 512K x 16 1M x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB838200A is a CMOS Si-gate mask-programmable static read only memory organized as 524,288 words by 16 bits or 1,048,576 words by 8 bits.

Contextual Info: ff» c Q Novem ber 1992 Edition 2 .0 FUJITSU DATASHEET . — MB834200B CMOS 4M-BIT MASK READ ONLY MEMORY 256K x 16 512K x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB834200B is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits.

80703

Abstract: 80502
Contextual Info: May 1992 Edition 1.1 FUJITSU DATA SHEET / MB98A8040X- / 8050x- 8060x- / 8070x-30 EEPROM MEMORY CARD ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD 16K /3 2 K /6 4 K /1 2 8 K -B Y T E The Fujitsu MB98A8040x, MB98A8050x, MB98A8060x and MB98A8070x are

mb83

Abstract: O26U
Contextual Info: March 1992 Edition 1.0A — FUJITSU DATA SHEET MB834200B CMOS 4M-Bit Mask Read Only Memory The Fujitsu MB834200B is a CM OS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits. It has TTL-compatible I/O 3-state output level with full-static operation i.e., no clock

MBM27C2000-15

Abstract: Fujitsu Ltd MBM27C2000
Contextual Info: FUJITSU LTD S3E D 374^7Sh D0a3bSb Ô5Ô W F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET MBM27C2000 -12/-15 CMOS 2M-BIT UV EPROM CMOS 2,097,152-BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C2000 EPROM is a high speed read-only static memory that is

Contextual Info: FUJITSU July 1992 Edition 3.0 DATA SHEET MB98A9061X- / 9071x- / 9081x- / 9091x-20 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 64K / 1 28K 1256K / 512K-BYTE The Fujitsu MB98A9061x, MB98A9071x, MB98A9081X and MB98A9091x are Static Random Access Memory SRAM cards capable of storing and retrieving

Contextual Info: « B #*3 f t e 1 6 r O December 1992 Edition 2.0 FUJITSU DATA SHEET MB834200A/AL CMOS 4M-BÌT MASK READ ONLY MEMORY 256K x 16 512K x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB834200A/AL is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits.

20A1

Abstract: fujitsu PCMCIA flash
Contextual Info: œ FUJITSU DATASHEET: MB98A8092X- / 8102x- / 8112x- / 8122x-25 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1M / 2M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are Flash electrically eraseable and programmable Flash memory cards capable of

Contextual Info: March 1992 Edition 1.0A FUJITSU DATA SHEET MB834200B CMOS 4M-Bit Mask Read Only Memory The Fujitsu MB834200B is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits. It has TTL-compatible I/O 3-state output level with full-static operation i.e., no clock

furukawa standard battery

Abstract: 61113 MB98A60813
Contextual Info: February 1992 Edition 1.0 FUJITSU DATA SHEET M B 9 8 A 6 0 8 1 X - / 6 0 9 1 x - / 6 1 0 1 x - / 6 1 1 1 x-25 OTPROM MEMORY CARD ONE TIME PR O G R AM M ABLE READ ONLY MEMORY CARD 256K / 512K / 1 M / 2M-BYTE The Fujitsu MB98A6081 x. MB98A6091 x, MB98A6101 x and MB98A6111 x are One

L-1016

Abstract: FPT-64P-M01 AU-AIS MB834200BPFQ MB834200BPFTN MB834200BPFTR MB834300BP MB834300BPFQ mb83
Contextual Info: « .1392 March 1992 Edition 1.0A FUJITSU DATA SH EET MB834200B CMOS 4M-Bit Mask Read Only Memory The Fujitsu MB834200B is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits. It has TTL-compatible I/O 3-state output level with full-static operation i.e., no clock

Tce 1992

Contextual Info: & Microchip 27LV256 256K 32K x 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION W ide voltage range 3.0V to 5.5V The Microchip Technology Inc. 27LV256 is a low voltage High speed performance — 200ns maximum access tim e at 3.0V (3.0 volt) CMOS EPROM designed for battery powered

MBM27C64-30

Abstract: MBM27C64-20 MBM27C64-25 Fujitsu MBM27C64 MBM27C64
Contextual Info: October 1992 Edition 2.0 FUJITSU DATA SHEET MBM27C64-20/-25/-30 CMOS 64K-BIT UV EPROM CMOS 65,536-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C64 is a high speed 65,536-bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM . It is especially well suited for

Contextual Info: & 27LV512 Microchip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION W ide voltage range 3.0V to 5.5V The Microchip Technology Inc. 27LV512 is a low voltage High speed performance (3.0 volt) CMOS EPROM designed for battery powered — 200ns maximum access tim e at 3.0V

Contextual Info: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance — 120ns maximum access time The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption

Contextual Info: 27C256 M icrochip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns maximum access time bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption

Contextual Info: & 27C128 M icrochip 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance — 120ns Maximum access time CMOS Technology for low power consumption — 20mA Active current — 100|iA Standby current Factory programming available Auto-insertion-compatible plastic packages

82s141

Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max

Contextual Info: s¿¡5 DATASHEET: M B 9 8 A 8 0 8 1 X - / =_ FUJITSU 8 0 9 1 x - / 8 1 0 1 x - / 8 I I I X -2 0 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARO 256K / 512K / 1M / 2M-BYTE The Fujitsu MB98A8081X, MB98A8091X, MB98A8101x and MB98A8111x are Flash electrically eraseable and program m able Flash memory cards capable of

Contextual Info: & 27HC256 M icrochip 256K 32K x 8 High Speed CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27HC256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. • — 55ns access tim e available CMOS technology for low power consumption

27lc64

Abstract: NM27LC256 27LC512 NM27LC256QE200
Contextual Info: PRELIMINARY June 1992 NM27LC256 262,144-Bit 32k x 8 Low Current CMOS EPROM General Description Features The NM27LC256 is a 32k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current in both the active and standby modes.