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KIOXIA TC58NYG0S3EBAI4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	TC58NYG0S3EBAI4		4,449			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC58NYG0S3EBAI4 NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin TFBGA / TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	TC58NYG0S3EBAI4		2,949			1 - 10 $36.41 100 $32.64 1000 $32.64 10000 $32.64	Buy Now

TC58NYG0S3E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TC58NYG0S3E Abstract: TC58NYG0S3ETA00 TC58NYG0S Contextual Info: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S	PDF
TC58NYG0S3ETAI0 Abstract: TC58NYG0S Contextual Info: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S	PDF
TC58NVG0S3EBA Abstract: TC58NYG0S3EBAI4 TC58NYG0S3E P-TFBGA63-0911-0 TC58NYG0S R/PA15 Contextual Info: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBA TC58NYG0S3EBAI4 P-TFBGA63-0911-0 TC58NYG0S R/PA15	PDF
Contextual Info: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C	PDF
THGBM4G4D1HBAIR Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR Contextual Info: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number	Original	SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0 TC58DYM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5TAI0 TC58DVG02A5BAJ4 THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR	PDF