TC58NYG0S Search Results

TC58NYG0S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TC58NYG0S3HBAI6		Toshiba Memory America	Integrated Circuits (ICs) - Memory - IC FLASH 1G PARALLEL 67VFBGA	Original	PDF	599.64KB

TC58NYG0S Price and Stock

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KIOXIA TC58NYG0S3HBAI6 IC FLASH 1GBIT PARALLEL 67VFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC58NYG0S3HBAI6	Tray	212		1	1 $2.74 10 $2.56 100 $2.37 1000 $2.37 10000 $2.37	Buy Now
Mouser Electronics	TC58NYG0S3HBAI6					1 - 10 - 100 - 1000 - 10000 -	Get Quote
KIOXIA TC58NYG0S3HBAI4 IC FLASH 1GBIT PARALLEL 63TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC58NYG0S3HBAI4	Tray	210		1	1 $3.65 10 $2.75 100 $2.52 1000 $2.18 10000 $2.18	Buy Now
Mouser Electronics	TC58NYG0S3HBAI4		200			1 $3.63 10 $2.63 100 $1.80 1000 $1.80 10000 $1.80	Buy Now
Toshiba America Electronic Components TC58NYG0S3HBAI6
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Bristol Electronics	TC58NYG0S3HBAI6		343			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	TC58NYG0S3HBAI6		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
KIOXIA TC58NYG0S3EBAI4
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Chip Stock	TC58NYG0S3EBAI4		4,449			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC58NYG0S3EBAI4 NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin TFBGA / TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	TC58NYG0S3EBAI4		2,949			1 - 10 $36.41 100 $32.64 1000 $32.64 10000 $32.64	Buy Now

TC58NYG0S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TC58NYG0S3E Abstract: TC58NYG0S3ETA00 TC58NYG0S Contextual Info: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S	PDF
TC58NYG0S3ETAI0 Abstract: TC58NYG0S Contextual Info: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S	PDF
TC58NVG0S3EBA Abstract: TC58NYG0S3EBAI4 TC58NYG0S3E P-TFBGA63-0911-0 TC58NYG0S R/PA15 Contextual Info: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBA TC58NYG0S3EBAI4 P-TFBGA63-0911-0 TC58NYG0S R/PA15	PDF
Contextual Info: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.	Original	TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C	PDF
Contextual Info: TC58NYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI6is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.	Original	TC58NYG0S3HBAI6 TC58NYG0S3HBAI6is 688bits) 1024blocks. 2176-byte 2012-08-31C	PDF
Contextual Info: TC58NYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI4 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.	Original	TC58NYG0S3HBAI4 TC58NYG0S3HBAI4 688bits) 1024blocks. 2176-byte 2012-10-01C	PDF
THGBM4G4D1HBAIR Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR Contextual Info: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number	Original	SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0 TC58DYM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5TAI0 TC58DVG02A5BAJ4 THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR	PDF
TC58NVG2S0FTA00 Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25 Contextual Info: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial	Original	48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25	PDF