am 332
Abstract: AM2001 Ax292
Contextual Info: Am3500 Mask-Programmable ECL G ate Array PR ELIM IN ARY > 3 u en DISTINCTIVE CHARACTERISTICS U nlim ited use o f high-pow er m acros Large m acrocell library containing o v e r 200 functions - Supported o n m ajor CAE w orkstations - S uperset o f MCA-2 Advanced oxide isolated bipolar LSI process technology
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am3500tc002800wf0109807322a+3am 332am2001ax292
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LT016
Abstract: LT08 YD-350 ecu schematics AIX200 LT08C LBd8 AIX2024 COF2001
Contextual Info: ADV faCRO PLA/PLE/ARRAYS 13E D Am353 b oas?sat, aoaasib 1 1 Mixed ECL/TTL I/O Mask-Programmable Gate Array > 3 DISTINCTIVE CHARACTERISTICS Integrated up to 410 ECL-equivalent gates in a 24-pin slim DIP , to eliminate "g lu e " logic, resulting in reduced
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atn35324-pinais-wcp-15m-9/88-0lt016+8lt08yd-350ecu schematicsaix200lt08clbd8aix2024cof2001
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LH202
Abstract: LH293 motorola mca nor gate using TTL transistor I400 I403 LH201 h54 motorola mpa1
Contextual Info: Ami 850 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 1800 equivalent gates - 72 internal cells - Up to 80 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case T pd = 1.2 ns oo cn Large m acrocell library containing over 150 functions
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7429aca20687287alh202+9lh293motorola mcanor gate using ttltransistori400i403lh201h54 motorolampa1
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AM3526
Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074
Contextual Info: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 | 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s
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1t-42-11-13wf00116400ech7t-42-11-13+7am35262-bit half adderam312am290am2019am2001002074
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AM2019
Abstract: 2-bit half adder layout AX253 AX201 AM2001 AX261
Contextual Info: * Am3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS • • • Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns
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am3525tc0028007321a7322a+6am20192-bit half adder layoutax253ax201am2001ax261
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LBD8
Abstract: lt08 LT016
Contextual Info: ADV KICRO PLA /P LE /A R R A YS 13E D 1 05S7Sat. Q O a flà lt *1 I Am3530 Mixed ECL/TTL I/O Mask-Programmable Gate Array > 3 DISTINCTIVE CHARACTERISTICS GO 01 Integrated up to 410 ECL-equivalent gates in a 24-pin slim DIP , to eliminate "g lu e " logic, resulting in reduced
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05s7satam353024-pinalb-wcp-15m-9/88+3lbd8lt08lt016
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AOX2053
Contextual Info: ADVANC ED MICRO DEVICES 7b D E j 05575.25 0020=177 3 g " 025 7525 ADVANCED MICRO DEVICES r- Am3550 76C 2 0977 T - 4 2 - 1 1 —1 5 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 6228 equivalent gates - 576 internal cells
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schematic diagram of AM1850S
Abstract: HALF ADDER motorola mca ECL IC NAND
Contextual Info: Ami 850 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS 00 Large macrocell library containing over 150 functions - Supported on major CAE workstations - Superset of MCA-1 Advanced oxide isolated bipolar LSI process technology
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am18507429aca2068q00000qd0+4schematic diagram of am1850shalf addermotorola mcaecl ic nand
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