TBA 5500 Search Results

ZOV 07D 471K varistor

Abstract: zov 14d431k ZOV 20D 431K ZOV 10D 431K 70391k ZOV 471K zov 431K 14D431K ZOV varistor 821k ZOV 14D 391K varistor
Contextual Info: Varistors / MOVs Varistors for SPD T - M O V s TABLE of CONTENTS Page GENERAL INFORMATION 2 2 3 4-5 Introduction - Product Series Certifications List for All Series Terminology VARISTORS 8 Standard Marking 8 Part Numbering System 9 Dimensions 10 Taping Specification

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

ELECTRONIC BALLAST DIAGRAM 400W

Abstract: ELECTRONIC BALLAST 150 W HID DIAGRAM dimmable HID BALLAST ballast electronic hps electronic ballast mh 400w ELECTRONIC BALLAST DIAGRAM 1000W 61347-1 sodium vapor lamp ballast current characteristics 3.5kw pfc discharge electronic ballast 1000W
Contextual Info: CAT RE-GEN COVER 02:CAT RE-GEN COVER 02 12/03/2010 16:06 Page 32 Europe Headquarters: Venture Lighting Europe Ltd. Trinity Court Batchworth Island Church Street, Rickmansworth, WD3 1RT, United Kingdom + 44 0845-2302222 Fax: +(44) 0845-2302077 sales@venturelighting.co.uk

BA246

Abstract: BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249
Contextual Info: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode

ba153

Abstract: BA138
Contextual Info: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode

BA260

Abstract: BA139 BA138 BA138 diode BA205 BA169 BA251 ba209 BA114 ba148
Contextual Info: K8A2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA204

Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
Contextual Info: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: Rev. 1.0, Nov. 2010 K8A2815ET B E 128Mb E-die NOR FLASH 8M x16, Sync Burst, Page Mode, Multi Bank 1.7V to 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

ba508

Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Contextual Info: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary

Contextual Info: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR

BA512

Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Contextual Info: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh

BA339

Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

BA95

Abstract: 8A0000
Contextual Info: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA425

Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

ba508

Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

SA214

Abstract: SPECIFICATION SA210 SA239 sa171 SA262 transistor SA235 MBM29QM12DH SA259 SA210 SA238
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

SA209

Abstract: SA147 SA194
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static