TB 1275 AN Search Results

BT 4840

Abstract: scr bt 106 Hind Rectifiers H1500CH 50 Amp current 512 volt scr H371TB Hirect H55TB H65TB Hirect* H955 hirect H507CH
Contextual Info: HIND RECTIFIERS LTD/ MKTG SbE D 4411*1114 GGGGÜlh T05 « H I N I ' Engg. Publication 2 - 5 /9 1 . ORDERING : Example : H 500 TB 12 J00 H-Converter Grade SCR 500-Maximum Average Current Ratings T B - Tophat Type with Flexible Cathode lead T L - Tophat Type lug termination ( Without lead )

MOC3063

Abstract: MOC3063M IEC68 MOC3063S MOC3063S-TA1 VDE0110 TB 1275 an
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-on Only FEATURES 1. This specification shall be applied to photocoupler. Model No. MOC3063 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : MOC3063-V : 1-channel type * Wide lead spacing package :

cny17f

Abstract: CNY17F-1 CNY17F-1M-V CNY17F-1-V CNY17F-2 CNY17F-2M-V CNY17F-2-V CNY17F-3 CNY17F-3M-V CNY17F-4
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. CNY17F-1 / CNY17F-2 / CNY17F-3 / CNY17F-4 as an option. 2. Applicable Models Business dealing name * Dual-in-line package :

40015248

Abstract: LTV8D52-V
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES 1. This specification shall be applied to photocoupler Model No. April 2010 LTV-852/LTV-8D52 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV852-V / LTV8D52-V

LTV-123-V

Abstract: IEC68 LTV-123 LTV-123M LTV-123M-V LTV-123S LTV-123S-TA1-V LTV-123S-V
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-123 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV-123-V : 1-channel type * Wide lead spacing package :

PC 814 photocoupler

Abstract: LTV824-V Lite-On LTV814 LTV814-V LTV824STA1-V mark code t4 diode LTV-814 LTV814STA1-V LTV814S-V LTV824M-V
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-814 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV814-V : 1-channel type / LTV824-V : 2-channel type /

LTV846S

Abstract: LTV846-V LTV-816 b 816 4pin 826m LTV816S LTV816S-V LTV826S-V LTV846 mark code t4 diode
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-816 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV816-V : 1-channel type / LTV826-V : 2-channel type /

LTV817

Abstract: mark code t4 diode TB 1275 N DATA SHEET LTV817 photocoupler LTV817M-V LTV817S-V LTV817-V LTV827-V pc 817 LTV-817
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-817 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV817-V : 1-channel type / LTV827-V : 2-channel type /

FX102-K

Abstract: ZVEI Tone decoder
Contextual Info: Selective Call Tone Decoders FX003 Obsolete Product For Information Only - Publication D /003 /4 February 1990 15-Tone Selcall Decoder CCIR, ZVEI, EEA, EIA Tone Sets Group Call and Data Capability ¡a. Excellent Noise Performance High Dynamic Range 4 Bit Data Output

mark code t4 diode

Abstract: CNY17-1M-V CNY17-1S-V CNY17-1-V CNY17-2M-V CNY17-2S-V CNY17-2-V CNY17-3M-V CNY17-3S-V CNY17-3-V
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES * High collector-emitter voltage VCEO = 70V * High input-output isolation voltage ( Viso = 5,000Vrms ) * Response time ( tr : TYP. 5µs at VCC = 10V, IC=2mA, RL = 100Ω ) * Current transfer ratio

RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 IRF640 circuit IRF642 RF1S640
Contextual Info: IRF640, IRF641, IRF642, RF1S640, RF1S640SM H A R R IS S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 16A and 18A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

SR35S

Contextual Info: 10 2.5 MIN. D ± 0 . I C ± 0. A -S 0 . 6 3 5 (C .2) PITCH 1 ^o ftf| -F □HI f n I z m e : : unf P T ÏÏÏÏÏÏ DETAIL FOR SOLDERING AREA (0 .2 7 ) T Y P . (4) 0 O .7± O .O 5 0 . 9 ± 0 . 0 5 5 .2 ! 0 . 3 5 M IN . O J A RECOMMENDED PCS PATTERN LAYOUT

Contextual Info: 10 2.5 MIN. D ±0. C ±0. 4 B - 0 0.635 PITCH W fflY tlT T P JV ffflH DETAIL FOR SOLDERING AREA 5.2 : c o l i c : c l lo c i c o p e : coi 0 O .9 t Q.O5 CA 0 0.7±0.05 0.35MIN. C O .3 7 . I X d _ RECOMMENDED ROB PA77ERN LA70U7

sn 16848

Contextual Info: W hpI HEWITT mLHM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 500 to 2000 MHz Technical Data UTO/UTC/PPA 2013 Series Features Description • Frequency Range: 500 to 2000 MHz The 2013 Series is a thin-film high power GaAs FET RF amplifier

Contextual Info: 10 2.5 MIN. D ±0. C ±0. 0.635 j 0 .3 IT5 TYP.I2 PITCH O +l DETAIL FOR SOLDERING AREA É C :3 | t^ 3 D l RECOM M ENDED a) N O TES urn MATERI AL / t t v V i f J ^ X A y L C P , a s , H0USING:G.F.LCP,WHITE.UL94V-0 L= i? C VACUUM f* 0 NO t — 0 =2 ) T E R M IN A L s C O P P E R

B43888

Abstract: epcos b43888c9475m
Contextual Info: Aluminum electrolytic capacitors Single-ended capacitors Series/Type: B43888 Date: November 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

TB 1275 N

Abstract: 0227D
Contextual Info: 10 1.5 MIN. c±o. I D±0. B - 0 0.6 55 PITCH U_UUUUUUl) ( 05) mmx'jj VACUUM D E T A IL FOR S O L D E R IN G id : u nl i l t p z □ ii AREA AREA c h i i e : : u n i 5.2 0o.g±o.Q5 o. I A ^ y a O O O O 'O O O O a y r r ir in E M D M : 0O.7±O. O5

F9N05

Abstract: f9n0 NCV8440STT1G NCV8440STT3G 024 diode
Contextual Info: NCV8440 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Benefits http://onsemi.com • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • • Diode Clamp Between Gate and Source

F9N05

Abstract: NCV8440
Contextual Info: NCV8440 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Benefits http://onsemi.com • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • • Diode Clamp Between Gate and Source

NTLMS4506N

Abstract: MOSfet 4392
Contextual Info: NTLMS4506N Advance Information Power MOSFET 30 A, 30 V N–Channel SO–8 Leadless The SO–8LL Leadless package uses the power QFN package technology. It’s footprint matches that of the standard SO–8 single die device. This Leadless SO–8 package provides low parasitic

NTLMS4505N

Abstract: 4392 MOSFET
Contextual Info: NTLMS4505N Advance Information Power MOSFET 31 A, 24 V N–Channel SO–8 Leadless The SO–8LL Leadless package uses the power QFN package technology. It’s footprint matches that of the standard SO–8 single die device. This Leadless SO–8 package provides low parasitic

ICS843001AGI-23

Abstract: ICS843001AGI-23LF ICS843001AGI-23LFT ICS843001AGI-23T ICS843001AI23 ICS843001I-23 ICS84332 OC48 Surge Protection sata
Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS843001I-23 FEMTOCLOCKS CRYSTAL-TO-3.3V LVPECL/LVCMOS FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS843001I-23 is a highly versatile, low ICS phase noise LVPECL/LVCMOS Synthesizer HiPerClockS™ which can generate low jitter reference clocks

din 867

Abstract: 842 ic 41585
Contextual Info: 13 12 10 M A T E R IA L N O TES: 1. M A T E R IA L H O U S IN G : G L A S S F IL L E D 94V-0, 2. F IN IS H : S E L E C T G O LD SELEC T BO TH POW ER PLU G PLU G 2 PLUG 3 PLU G 4 PLUG T E R M IN A L S PRODUCT 5 SHEET PARTS PEG ARE H O LES M ATES M O LEX TO

Contextual Info: 10 5 MIN. D±0„ C±0„ B 0.635 PITCH (3. 6) W f f lT t lY Y iY * D E T A IL FOR S O LD E R IN G m z: zzdoiIIoiz : zm p p z Z J ^ M : D ip Q Q M X _ E T E _ x y a 0 0 0 0 |0 0 0 0 a y x _ E T E _ X E Q 3 n M 0O.9±O.O5 I 10. 11A 0O.7±O.O5 0.35MIN. RECOMMENDED