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    NCV8440STT1G Search Results

    NCV8440STT1G Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NCV8440STT1G
    On Semiconductor NCV8440 - TRANSISTOR 2.6 A, 52 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA, LEAD FREE, CASE 318E-04, TO-261, 4 PIN, FET General Purpose Power Original PDF 124.6KB 9
    NCV8440STT1G
    On Semiconductor Clamping N-Channel MOSFET Original PDF 143.71KB 8
    SF Impression Pixel

    NCV8440STT1G Price and Stock

    onsemi

    onsemi NCV8440STT1G

    MOSFET N-CH 59V 2.6A SOT223
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    DigiKey NCV8440STT1G Reel 1,000
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    Vyrian NCV8440STT1G 1,119
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    NCV8440STT1G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • • • • • • http://onsemi.com Diode Clamp Between Gate and Source ESD Protection − Human Body Model 5000 V Active Over−Voltage Gate to Drain Clamp


    Original
    NCV8440, NCV8440A NCV8440/D PDF

    024 diode

    Contextual Info: NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • • • • • • http://onsemi.com Diode Clamp Between Gate and Source ESD Protection − Human Body Model 5000 V Active Over−Voltage Gate to Drain Clamp


    Original
    NCV8440, NCV8440A NCV8440/D 024 diode PDF

    F9N05

    Abstract: f9n0 NCV8440STT1G NCV8440STT3G 024 diode
    Contextual Info: NCV8440 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Benefits http://onsemi.com • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • • Diode Clamp Between Gate and Source


    Original
    NCV8440 NCV8440/D F9N05 f9n0 NCV8440STT1G NCV8440STT3G 024 diode PDF

    F9N05

    Abstract: NCV8440
    Contextual Info: NCV8440 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Benefits http://onsemi.com • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • • Diode Clamp Between Gate and Source


    Original
    NCV8440 NCV8440/D F9N05 PDF