H65TB
Abstract: H65TBXX 1200V 100 A THYRISTOR 200A thyristor gate control circuit Hirect
Contextual Info: PHASE CONTROL THYRISTOR H65TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 10 10 mA mA 65 A 100 A 1000 A 5000 A2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage
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h65tbxxjune-2008h65tb1200v 100 a thyristor+2200a thyristor gate control circuithirect
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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semiconductorhirect h507chhirect diodeh400tb |
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BT 4840
Abstract: scr bt 106 Hind Rectifiers H1500CH 50 Amp current 512 volt scr H371TB Hirect H55TB H65TB Hirect* H955 hirect H507CH
Contextual Info: HIND RECTIFIERS LTD/ MKTG SbE D 4411*1114 GGGGÜlh T05 « H I N I ' Engg. Publication 2 - 5 /9 1 . ORDERING : Example : H 500 TB 12 J00 H-Converter Grade SCR 500-Maximum Average Current Ratings T B - Tophat Type with Flexible Cathode lead T L - Tophat Type lug termination ( Without lead )
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500-maximum12-figurebt 4840scr bt 106+8hind rectifiers h1500ch50 amp current 512 volt scrh371tbhirecth55tbh65tbhirect* h955hirect h507ch
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