TB 1238 Search Results

TB-534

Abstract: CA1389 98PL311 CA1589 R04350B
Contextual Info: 4$>*=3 THIRD ANGLE PROJECTION REV OR A ECN No. M 123889 M 124525 REVISIONS DESCRIPTION DATE DR AUTH 08/18/09 MMG NEW RELEASE MODIFIED DRAWING, CHG. TB IN TITLE 09/22/09 MMG DJ DJ S U G G E S T E D M O U N T IN G C O N F IG U R A T IO N FOR C A 1 5 8 9 C A S E STYLE, ’’0 6 A M 0 1 ” PIN C O D E

2sb1238pqr

Abstract: LC07A 2SB910M T2721 EE-19 N 2SB1238 2SD1226M 2SD1859 r272 tcam
Contextual Info: ROHM CO L T D 4 QE T> * Hi TflEÖ W OGOSSDb 0 E9 RHtl h 7 V V 7 # /Transistors 2 S B 9 1 0 M / 2 S B 1238 T=2 7-2 i 2 S B 91 2SB 1 2 3 3 1 fc°* * ^ ^ pnp '> y ^ ^ >v * * Power Amp. Epitaxial Planar PNP Silicon Transistors • v f& IS I/'P im e n s io n s U n it: mm

MUR3040PT

Abstract: MUR3050PT MUR3060PT RURD1540 RURD1550 RURD1560 2774.1 RUR01560
Contextual Info: M UR3040PT M UR3050PT M UR3060PT HARRIS • H3QE271 0G424G7 ñb3 I IHAS HARRIS SEMICOND SECTOR 15A Ultrafast Dual Diode With Soft Recovery Characteristic 5bE D May 1992 • r - ; 2. 3 - 0 7 Package Features RURD1540 RURD1550 RURD1560 TO-218AC TOP VIEW U ltrafast w ith S o ft R eco very C haracteristic

transistor A1515

Abstract: Transistor 2SA 2SB 2SC 2SD d2172 a1515 transistor transistor D1292 h7195 rkm 34 transistor C1741A IC TB 1238 AN transistor b1184
Contextual Info: Explanations • Standard Products, Semi-standard Products, Custom Products To make it easier for the customer to select the type of product best suited to his needs, we offer transistors, diodes, light-emitting diodes sensors, lasers diodes, and resistors in three types: 1 standard, (2) semi-standard, and

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

TDA 7329

Abstract: TDA 1808 702 Z TRANSISTOR smd TDA 3030 Transistor smd 338 Mitteilung VEB RFT VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN RFT Service Mitteilung Service Mitteilungen robotron
Contextual Info: SERVICE-M ITTEI LUIIG IEN ErW 1 radio - teievfsfon 1~ 6-8 V E I R FT I N D U S T R I E V E R T R I E B RUN D FUN K UND F E R N S E H E N Sei!« F e b . 90 1 -12 Mitteilungen aus dea VEB Fernsehgerätewerk Staffurt, Kundendienst 1. Serie 3000 - F-Leiterplatte

TB 1238

Abstract: TB 1238 An EMP212-P1 AuSn eutectic
Contextual Info: EMP212-P1 9.5 – 12.0 GHz Power Amplifier MMIC ISSUED DATE: 07-01-04 FEATURES • • • • 9.5 – 12.0 GHz Operating Frequency Range 29.5dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm APPLICATIONS

TB 1238 An

Abstract: TB 1238 EMP214-P1
Contextual Info: EMP214-P1 12.5 – 16.5 GHz Power Amplifier MMIC ISSUED DATE: 07-01-04 FEATURES • • • • 12.5 – 16.5 GHz Operating Frequency Range 29.0dBm Output Power at 1dB Compression 15.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19dBm APPLICATIONS

SMD 8 PIN IC MARKING CODE m1

Abstract: SMD Transistor Marking Code m12 transistor smd ba rx CSTCC3M58GD3346-R0 AN3010 um 66 melody generator CSTLS3M58GD3267-B0 G312AM diode smd marking code M12 AS2533F
Contextual Info: austriamicrosystems Multi-Standard CMOS Telephone IC for Basic Telephones AS2533-36 DATA SHEET General Description - The AS253x is a CMOS integrated circuit that contains all the functions needed to build a high performance electronic telephone set with basic features.

CSTCC3M58GD3346-R0

Abstract: MURATA GRP
Contextual Info: austriamicrosystems Multi-Standard CMOS Telephone IC for Basic Telephones AS2533-36 DATA SHEET General Description - The AS253x is a CMOS integrated circuit that contains all the functions needed to build a high performance electronic telephone set with basic features.

SSD1298

Abstract: MARKING S403 KVP45 MARKING S196 SSD1298Z sdc 606 KVP29 MARKING S410 marking S193 marking s186
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1298 Advance Information 240 RGB x 320 TFT LCD Controller Driver integrated Power Circuit, Gate and Source Driver with built-in RAM This document contains information on a new product. Specifications and information herein are subject to change

smd TRANSISTOR code marking M6

Abstract: AS253X AN2201 AN3010 smd marking code M12 AS2534 AS2536 smd transistor at cay AS2533 AS2533-36
Contextual Info: austriamicrosystems Multi-Standard CMOS Telephone IC for Basic Telephones AS2533-36 DATA SHEET General Description - The AS253x is a CMOS integrated circuit that contains all the functions needed to build a high performance electronic telephone set with basic features.

EMP214

Abstract: EMP214-P1
Contextual Info: EMP214-P1 12.50 – 15.50 GHz Power Amplifier MMIC UPDATED 02/08/2005 FEATURES • • • • 12.5 – 15.5 GHz Operating Frequency Range 29.0dBm Output Power at 1dB Compression 15.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19dBm Excelics

2410ml-05w

Abstract: c9012 equivalent nidec brushless dc motor Nidec TA450 Fan OD1225PT-12HB nidec ta350 nidec 24v motor TA150DC PAPST 8958 papst 6028S
Contextual Info: 77282 table contents:72975 Fan Catalog 7/24/09 7:57 AM Page 1 Table of Contents Part Number Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Fan Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

EMP214

Contextual Info: EMP214 PRELIMINARY DATA SHEET 12.5–15.5GHz Power Amplifier MMIC ISSUED DATE: 09-17-04 FEATURES • • • • 12.5 – 15.5 GHz Operating Frequency Range 29.5dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm

PD488170L

Abstract: TB 1226 EN NEC RDRAM LN2117 NEC PD488170L
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK D escription The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable of bursting up to 256 bytes o fd a ta a t2 n s p e r byte. The use o f Rambus S ignaling

Contextual Info: HED INDICATES ORIGINAL DASH ND -201 -202 -203 -204 -205 -205 -207 -20B -209 -210 -211 -212 -213 -214 -215 -215 -217 -218 -219 -220 -221 -222 -223 -224 -225 -301 CABLES ACCOMMODATED Ml 7/176-00002 TWC-7B-1 TWC-124-1A 10502,RAYCHEM TWAC-7B-1F2 7B26D0130,RAYCHEM

SSD2119

Abstract: Resolution ta 9690 gn SSD2119Z7 SSD2119 application note S945 up 6103 s8 equivalent pin diagram of ic 7489 s937 sj 8227
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD2119 Advance Information 320 RGB x 240 TFT LCD Driver Integrated Power Circuit, Source and Gate Driver and RAM This document contains information on a new product. Specifications and information herein are subject to change

transistor b 1238

Abstract: EMP212 EMP212-P1
Contextual Info: EMP212-P1 9.0 – 12.0 GHz Power Amplifier MMIC UPDATED: 05/15/2008 FEATURES • • • • 9.0 – 12.0 GHz Operating Frequency Range 30.0dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm Excelics

Contextual Info: Axial Lead and Cartridge Fuses Subminiature LT-5 Time Lag Fuse 665 Series C UL US ELECTRICAL CHARACTERISTICS: % of Ampere Rating 100% 200% Time 4 hours Min 60 sec Max AGENCY APPROVALS: Listed by Underwriters Laboratories and Certified to CSA standards by Underwriters Laboratories.

20gn

Contextual Info: Axial Lead and Cartridge Fuses Subminiature RoHS LT-5 Time Lag Fuse 665 Series U L ® ELECTRICAL CHARACTERISTICS: % of Ampere Rating 100% 200% Time 4 hours Min 60 sec Max AGENCY APPROVALS: Listed by Underwriters Laboratories from 50mA to 10A. CSA Certified from 50mA to 6.3A.

94v-0

Abstract: LT 424 FUSE T 160mA 00456
Contextual Info: Axial Lead and Cartridge Fuses Subminiature LT-5 Time Lag Fuse 665 Series U L ® ELECTRICAL CHARACTERISTICS: % of Ampere Rating 100% 200% Time 4 hours Min 60 sec Max AGENCY APPROVALS: Listed by Underwriters Laboratories from 50mA to 10A. CSA Certified from 50mA to 6.3A.

GA150TD120K

Abstract: IC171 termal control RG115
Contextual Info: PRELIMINARY GA150TD120K ]HALF-BRODGE” IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology

RG115

Abstract: RG-115 GA200DD120K
Contextual Info: PRELIMINARY GA200DD120K ]SINGLE SWITCH” IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology