TANAKA MATERIAL SAFETY Search Results

MURATA NFM

Abstract: AEI cable audio amplifiers small signal audio FET murata chip suppression filter AUDIO AMPLIFIER tanaka material safety common mode power line dc filter for emi suppression DLW5BTN501SQ2 Transistor audio power amplifier application
Contextual Info: Murata’s Components Resolve Noises of Digital Audio Amplifier ICs N owadays, digital audio amplifier ICs are being used as audio amplifiers for digital audio-video A/V devices such as mobile phones, portable audio players, and flat-panel LCD TVs primarily

tanaka gold wire 1.0 mil

Abstract: tanaka wire DM6030HK tanaka epoxy CMM-5-BD-000X TS3332LD Mimix Broadband tanaka au wire tanaka material safety tanaka bonding wire
Contextual Info: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC

tanaka bonding wire

Contextual Info: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC

ROHM resistor

Abstract: MCR03 TSZ22111-03 TSZ22111-04 09001F
Contextual Info: TSZ22111-03 noH m TYPE PRODUCTS FIXED THICK FILM CHIP RESISTORS PAGE M C R 0 3 Series 2/13 < Specifications Precautions and Prohibitions > Safety Precautions 1) The products are designed and produced for application in ordinary electronic equipment (AV equipment,

Contextual Info: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD Mar 2009 - Rev 04-Mar-09 Features Chip Device Layout High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

corrugated carton

Abstract: NA19020 FLC-13 FLCV-13 7 pin Inverter PWB ccfl Fujitsu inverter flcv-08 tanaka material safety data sheet inverter 4v to 12v SM02 lcd inverter ccfl transformer
Contextual Info: To : Specifications of INVERTER for FUJITSU LCD module FLCＶ-13 Approval Date： By ： This Product is designed, developed and manufactured as contemplated for general use, including without limitation, general office use, personal use, household use, and ordinary industrial use, but is not designed,

Contextual Info: 7.0-14.0 GHz GaAs MMIC Low Noise Amplifier L1018-BD May 2010 - Rev 11-May-10 Features Self Bias Architecture Small Size 20.0 dB Small Signal Gain 1.7 dB Noise Figure +10.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

L1000-BD

Abstract: XL1000-BD-EV1 XL1000-BD
Contextual Info: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD January 2010 - Rev 18-Jan-10 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

D1002-BD

Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1 152.01
Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

BD 139 140

Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

XL1002-BD

Abstract: 28LN3BA0050 L1002-BD V550
Contextual Info: 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier L1002-BD January 2010 - Rev 09-Jan-10 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 2.0-18.0 GHz GaAs MMIC Buffer Amplifier September 2009 - Rev 21-Sep-09 CMM4000-BD Features Chip Device Layout Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 8.5 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883

XD1001-BD-EV1

Abstract: DM6030HK TS3332LD XD1001-BD XD1001-BD-000V XD1001
Contextual Info: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier D1001-BD January 2010 - Rev 11-Jan-10 Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

cmm303

Abstract: CMM3030-BD DM6030HK TS3332LD tanaka material safety
Contextual Info: 30.0 kHz-30.0 GHz GaAs MMIC Distributed Amplifier CMM3030-BD May 2010 - Rev 19-May-10 Features Chip Device Layout Ultra Wide Band Driver Amplifier Low Gain Ripple Positive Gain Slope 11.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point +31.0 dBm Third Order Intercept

CMM2030-BD

Abstract: CMM2030 DM6030HK TS3332LD DEGC120
Contextual Info: 30.0 kHz-30.0 GHz GaAs MMIC Distributed Amplifier CMM2030-BD May 2010 - Rev 07-May-10 Features Chip Device Layout Ultra Wide Band Driver Amplifier Low Gain Ripple Positive Gain Slope 12.0 dB Small Signal Gain +16.0 dBm P1dB Compression Point +27.0 dBm Third Order Intercept

CMM4000

Abstract: CMM4000-BD CMM4000-BD-000V DM6030HK M393 TS3332LD tanaka material safety
Contextual Info: 2.0-18.0 GHz GaAs MMIC Buffer Amplifier CMM4000-BD September 2009 - Rev 21-Sep-09 Features Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 8.5 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883

nl8048bc19-02

Abstract: NL8048BC19 THC63LVDM83R lcd screen LVDS connector 40 pins application of pick place robot nl8048 LVDS 30 pin hirose LVDS lvds 20 pin lcd panel NEC lcd led backlight JAE LVDS 30 PIN
Contextual Info: TFT COLOR LCD MODULE NL8048BC19-02 18cm 7.0 Type WVGA LVDS interface (1port) PRELIMINARY DATA SHEET DOD-PP-0399 (2nd edition) This PRELIMINARY DATA SHEET is updated document from DOD-PP-0359(1). All information is subject to change without notice. Please confirm the sales representative before

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Chip Device Layout Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using

28LN2BA0047

Abstract: XL1001-BD L1001-BD tanaka material safety
Contextual Info: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883

TEXAS 7697

Abstract: CMM1100 CMM1100-BD DM6030HK PB-CMM1100-BD-0000 TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

XD9001

Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD
Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2009 - Rev 22-Sep-09 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

NA19020-C953

Abstract: NA19020 C953 FLC48SXC8V-02 FI-X30M FLCV-13 SS26E3935N8365C3273111 FLCL-20 KOWA CORP DS90CF386
Contextual Info: To : Specification of FUJITSU TFT-LCD module FLC48SXC8V-02 Approval Date： By ： This Product is designed, developed and manufactured as contemplated for general use, including without limitation, general office use, personal use, household use, and ordinary industrial use, but is not designed,