TACAN 41 Search Results

capacitor 100MF

Abstract: TACAN IC M103 A BS 415 capacitor gp 845 M103 SD1538-02 SD1538-2 SD1538
Contextual Info: SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz 7.8 dB MIN. GAIN

capacitor 100MF

Abstract: TACAN M103 SD1538-02 SD1538-2
Contextual Info: SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz 7.8 dB MIN. GAIN

capacitor 100mf 50v

Abstract: TACAN SD1538-02 M103 SD1538-2
Contextual Info: SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz 7.8 dB MIN. GAIN

d1536

Abstract: TRANSISTOR 8019 SD1536-08 TACAN transistor
Contextual Info: SGS-THOMSON S D 15 3 6 -0 8 iy RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 100 WATTS typ. IFF 1030 - 1090 MHz . 90 WATTS (min.) DME 1025 - 1150 MHz i 90 WATTS (typ.) TACAN 960 - 1215 MHz

Contextual Info: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: S G S -T H O M S O N S D 1 5 3 8 -0 2 m RF & M I C R O W A V E T R A N S I S T O R S A V IO N IC S A P P L IC A T IO N S DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz

Contextual Info: MS2552 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1

MRF1375

Contextual Info: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Power Transistors MRF1090MA MRF1090MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

TACAN 41 RF transistor

Contextual Info: MSC81325M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 X .400 2NLFL DESCRIPTION: 1 The ASI MSC81325M is a Common Base Device Designed for DME and TACAN Pulse Applications. 3 2 FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting

Contextual Info: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 SD1540 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 350 WATTS (typ.) IFF 1030 - 1090 MHz 300 WATTS (min.) DME 1025 - 1150 MHz

ARM-184

Abstract: ASM-663 1030mhz ARINC 568 AC0820 Transponder ID 48 mil 50071 G.N.M 2nd year IFR 640 AN/ARM-184
Contextual Info: Avionics IFR 6015 Ramp Test Set The IFR 6015 is a compact, lightweight and weatherproof unit designed for testing transponder modes 1,2,3A/C/S, TCAS I, II and Military E-TCAS as well as TACAN. • One main user screen for each test mode • Detachable antenna

Contextual Info: l i Ma jnm jf i.jninfii m Commerce Drive microsemi * «* Tel: 215 631-9840 Montgomeryvilie, P A 18936-1013 »"•«ÿ'WXPow ea-iijjy S U I 527-0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNATED FDR HIGH POWER PULSE !FF AMD TACAN . 5.0 WATTS (min.IIF F 1030-1090MH2.

AVF250

Abstract: ASI10571
Contextual Info: AVF250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AVF250 is a high power ClassC transistor designed for IFF/BME/TACAN applications in 1025-1150 MHz range. ØD C E F G H FEATURES:

Contextual Info: /= T * 7 J S G S -1 H 0 M S 0 N . M » l l L i g T O ( M [ ] S _S D 1 5 3 8 - 0 2 RF & MICROWAVE TRANSISTO R S AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 200 WATTS (typ. IFF 1030 - 1090 MHz

MRF245

Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1

Contextual Info: n = ^ 7 J # . S G S -T H O M S O N M » E L B g T m [ ] f _ S D 1 5 2 8 - 0 8 RF & MICROWAVE TR AN SISTO R S _ A VIO N IC S APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 20 WATTS (typ. IFF 1030 - 1090 MHz

Contextual Info: fZ 7 S G S -T H O M S O N ^ 7 #. K M SD1540 « « ® « ! RF & M ICROW AVE TR AN SISTO RS AVIONICS APP LIC ATIO N S • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 350 WATTS typ. IFF 1030 - 1090 MHz . 300 WATTS (min.) DME 1025 - 1150 MHz

Contextual Info: M 2 fV I$ C § T S & fY I! 140 C o m m e rc e D riv e W fo n tg o m e iy v ilte , PA 1893 6-10 13 Tel: 215) 631-9840 SD1536-8 RF & MiCROWAVE TRANSISTORS IFF/D ME APPLICATIONS DESIGNATED FOR HIGH POWER PULSE IFF, DM!'' TACAN 100 W ATTS (typ.) IFF 1030-1090M Hz

Contextual Info: ü J S S j r x m r r \ ’> j ,x j t î l «n t n t m "f 4 0 C o m m e r c e D r iv e M ic ro s e m j SD152o.8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNED FOR PULSE POW ER IFF, DÍ4E, TACAN * 0 2 b W ATT tvp IFF 1030 1090M M ; « 0.20 WATT (tin .! PME 102Í»-1130MMZ

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 SD1527-8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS • DESIGNATED FOR HIGH POWER PULSE IFF ANDTACAN • 5.0 WATTS (min.) IFF 1030-1090MH!

Germanium itt

Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Contextual Info: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470

MX0912B250Y

Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

HCW51

Abstract: MX0912B350Y D0310 IEC134
Contextual Info: DISCRETE SEMICONDUCTORS Data shMt a «tatù* Preliminary spedfcation date of Issus July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused em itter ballasting