TAA 775 Search Results

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,     , Memory Module AC Timing Waveforms Read Cycle tRC tRP tRAS RAS VIH – VIL – tAR tCSH tCRP CAS tRCD VIH – VIL –

Contextual Info: Rev.1.1_00 PROGRAMMABLE PORT CONTROLLER PORT EXPANDER WITH BUILT-IN E2PROM CIRCUIT S-7750B The S-7750B is a programmable port controller IC comprising E2PROM, a data output controller, a circuit to prevent malfunction during low supply voltage, etc. It operates at 400 kHz and interfaces with external devices via the

Contextual Info: Rev.1.0_00 PROGRAMMABLE PORT CONTROLLER PORT EXPANDER WITH BUILT-IN E2PROM CIRCUIT S-7750B The S-7750B is a programmable port controller IC comprising E2PROM, a data output controller, a circuit to prevent malfunction during low supply voltage, etc. It operates at 400 kHz and interfaces with external devices via the

Contextual Info: Rev.1.2_00 PROGRAMMABLE PORT CONTROLLER PORT EXPANDER WITH BUILT-IN E2PROM CIRCUIT S-7750B The S-7750B is a programmable port controller IC comprising E2PROM, a data output controller, a circuit to prevent malfunction during low supply voltage, etc. It operates at 400 kHz and interfaces with external devices via the

constant time delay

Abstract: i2c port expander S-7750C
Contextual Info: Rev.1.0_00 PROGRAMMABLE PORT CONTROLLER PORT EXPANDER WITH BUILT-IN E2PROM CIRCUIT S-7750C The S-7750C is a programmable port controller IC comprising E2PROM, a data output controller, a circuit to prevent malfunction during low supply voltage, etc. It operates at 400 kHz and interfaces with external devices via the

Contextual Info: Rev.1.3_00 PROGRAMMABLE PORT CONTROLLER PORT EXPANDER WITH BUILT-IN E2PROM CIRCUIT S-7750B The S-7750B is a programmable port controller IC comprising E2PROM, a data output controller, a circuit to prevent malfunction during low supply voltage, etc. It operates at 400 kHz and interfaces with external devices via the

FPM DRAM

Abstract: MT5LDT472 SO DIMM 100 Pin Pinout edo
Contextual Info: PRELIMINARY 4 MEG x 72 BUFFERED DRAM DIMM MT5LDT472 X DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard ECC pinout in a 168-pin, dual in-line

Hitachi DSA00166

Abstract: Nippon capacitors
Contextual Info: HB56UW272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module ADE-203-727A Z Rev. 1.0 Feb. 20, 1997 Description The HB56UW272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

block diagram of FPM

Abstract: DIMM 1999 FPM DRAM DM91 marking code ACh 168PIN DIMM 32MB
Contextual Info: PRELIMINARY 4 MEG x 72 NONBUFFERED DRAM DIMM DRAM MODULE MT5LDT472A X For the latest full-length data sheets, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard ECC pinout in a 168-pin, dual inline memory module (DIMM)

MT5LDT472

Abstract: fpm 75 64mb edo ecc
Contextual Info: PRELIMINARY 4 MEG x 72 BUFFERED DRAM DIMM DRAM MODULE MT5LDT472 X For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard ECC pinout in a 168-pin, dual inline memory module (DIMM)

910-820

Abstract: 74LVT16244 HB56UW272E-5 HB56UW272E-6 HB56UW272E-7 HM51W17805 Hitachi DSA00196 Nippon capacitors
Contextual Info: HB56UW272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module ADE-203-727A Z Rev. 1.0 Feb. 20, 1997 Description The HB56UW272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56UW272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module ADE-203-727A Z Rev. 1.0 Feb. 20, 1997 Description The HB56UW272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

PN-80-1

Abstract: G84 Package Intel 82430 IDT70824 IDT70824L IDT70824S IDT70824G
Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

IDT70824

Abstract: IDT70824L IDT70824S 0824X
Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

D1 PGA 478

Abstract: Intel 82430 saram idt
Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

Intel 82430

Abstract: IDT70825 IDT70825L IDT70825S
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.) Standby: 5mW (typ.) – IDT70825L

IDT70825

Abstract: IDT70825L IDT70825S ym 3016
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)

4218160-60

Abstract: NEC 4218160 TI42 upd4218160 NEC A2C MARKING LE50 PD4218160 IR35-207 4218160
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160,4218160 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

D1 PGA 478

Abstract: Intel 82430
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)

Intel 82430

Abstract: IDT70825 IDT70825L IDT70825S IDT70825PF 70825
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)

Intel 82430

Abstract: IDT70824 IDT70824L IDT70824S
Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

Intel 82430

Abstract: IDT70825 IDT70825L IDT70825S
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)

Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.) Standby: 5mW (typ.) – IDT70825L

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte