PD4218160 Search Results

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT MC-421000AD72 1M -WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-421000AD72 is a 1 048 576 words by 72 bits dynamic RAM module on which 4 pieces of 16M DRAM (/i PD4218160) and 2 pieses of 4M DRAM ( p PD424400)

MC-421000AD72

Abstract: MC-421000AD72F IC-3602
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-421000AD72F 1 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-421000AD72F is a 1,048,576 words by 72 bits dynamic RAM module on which 4 pieces of 16 M DRAM: µ PD4218160 and 2 pieces of 4 M DRAM: µPD424400 are assembled.

FH-70

Contextual Info: I DATA SHEET MOS INTEGRATED CIRCUIT MC-422000A32BA, 422000A32FA 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32BA, 422000A32FA are 2,097,152 words by 32 bits dynamic RAM module on which 4 pieces of 16 M DRAM: ^PD4218160 are assembled.

DH-1015

Abstract: MC422000A32BA70 pd4218160 MC-422000A32-70 MC-422000A32BA MC-422000A32BA-70 MC-422000A32BA-60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000A32BA, 422000A32FA 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32BA, 422000A32FA are 2,097,152 words by 32 bits dynamic RAM module on which 4 pieces of 16 M DRAM: µ PD4218160 are assembled.

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT MC-421000AA64 1M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA64 is a 1 048 576 words by 64 bits dynamic RAM module on which 16 pieces of 4M DRAM fi PD424400 or 4 pieses of 16M DRAM ( y. PD4218160)

16M DRAM

Abstract: uPD424400
Contextual Info: PRELIMINARY PRODUCT INFORMATION N EC MOS INTEGRATED CIRCUIT MC-421000AD72 1M-WORDBY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-421000AD72 is a 1 048 576 words by 72 bits dynamic RAM module on which 4 pieces of 16M DRAM ( ¡j PD4218160) and 2 pieses of 4M DRAM ( ¡i PD424400)

PD424400

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT MC-421000AA64 1M-WORDBY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64 is a 1 048 576 words by 64 bits dynam ic RAM module on w hich 16 pieces of 4M DRAM n PD424400 or 4 pieses of 16M DRAM ( pi PD4218160)

mc-421000aa64fb-70

Abstract: MC421000AA64FB70
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-421000AA64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA64FB is a 1,048,576 words by 64 bits dynamic RAM module on which 4 pieces of 16 M DRAM: µ PD4218160 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the

UPD42S18160G5-70-7-JF

Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The

MC421000A32BA70

Abstract: MC-421000A32FA-80
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A32BA, 421000A32FA are 1,048,576 words by 32 bits dynam ic RAM module on which 2 pieces of 16 M DRAWI: /¿PD4218160 are assembled.

D42S18160

Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
Contextual Info: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.

MC-421000AA64FB-70

Abstract: MC-421000AA64FB-60
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT M C -421000A A 64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64FB is a 1,048,576 w o rd s by 64 b its d y n a m ic RAM m o d u le on w h ic h 4 pieces o f 16 M DR AM : /¿PD4218160 are assem bled.

Contextual Info: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

LE-60

Abstract: 42S18
Contextual Info: jtiPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 1 M words by 16 bits and designed to operate from a single power supply. Optional features

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000AA64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64FB is a 1,048,576 w o rd s by 64 b its d y n a m ic RAM m o d u le on w h ic h 4 pieces o f 16 M DRAM : /PD4218160 are asse m bled .

NEC 4216160

Contextual Info: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A32BA, 421000A32FA are 1,048,576 words by 32 bits dynamic RAM module on which 2 pieces of 16 M DRAM: /¿PD4218160 are assembled.

Contextual Info: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

mc 668 L ic

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-422000AA64 2 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description Th e M C-422000AA64 is a 2,097,152 w ords by 64 bits dynam ic RAM m odule on w hich 8 pieces of 16 M DRAM: ,PD4218160 are assembled. This m odule provides high density and large quantities of memory in a small space w ithout utilizing the surfacem ounting technology on the printed circuit board.

nec A2C

Abstract: 8160l1
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

IC-3602

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000AD72F 1 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-421000AD72F is a 1,048,576 words by 72 bits dynam ic RA M module on which 4 pieces of 16 M DRAM : /¿PD4218160 and 2 pieces of 4 M DRAM : /iPD424400 are assembled.

NEC 4216160

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ /¡¿ P D 42S 16160, 4216160, 42S 18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e /1 P D 4 2 S 1 6 1 6 0 ,4 21 6160, 4 2 S 1 8 1 6 0 ,4 2 1 8 1 6 0 a re 1,048, 576 w o rds by 16 b its C M O S d y n a m ic RA M s. T he