TAA 723 Search Results

Hitachi DSA002729

Abstract: Nippon capacitors
Contextual Info: HB56UW472EJNB Series, HB56UW464EJNB Series 4,194,304-word x 72-bit High Density Dynamic RAM Module 4,194,304-word × 64-bit High Density Dynamic RAM Module ADE-203-723A Z Rev.1.0 Feb. 20, 1997 Description The HB56UW472EJNB, HB56UW464EJNB belong to 8 Byte DIMM (Dual In-line Memory Module)

Nippon capacitors

Contextual Info: HB56UW472EJNB Series, HB56UW464EJNB Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-723A Z Rev.1.0 Feb. 20, 1997 Description The HB56UW 472EJNB, HB56UW 464EJNB belong to 8 Byte DIMM (Dual In-line Memory M odule)

723653

Abstract: 72V841 72825 72V3622 BI 7284 72V3613 723674 72V211 72V221 72V241
Contextual Info: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. July’99/PC IDT FIFO Memory Products Width

723653

Abstract: BI 7284 72V7250 72V72100 72V7230 72V7240 72V7260 72V7270 72V7280 72V7290
Contextual Info: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. Jan’00 IDT FIFO Memory Products Quick Reference Guide

723653

Abstract: 72V7290 72V3613 72V7250 72V3611 72V3623 72V72100 72V7230 72V7240 72V7260
Contextual Info: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. July’00 IDT FIFO Memory Products Quick Reference Guide

42S1780

Contextual Info: DATA SHEET ¿iPD42S17800,4217800 MOS INTEGRATED CIRCUIT 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE ★ Description The ¿¿PD42S17800,4 2 1 7 8 0 0 are 2,097,152 w ords by 8 bits C M OS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT « P D 42S 17800L , 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The ¿¿PD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.

Contextual Info: :S Ä VsS^ y CMOS STATIC RAM 256K 32K x 8-BIT IN PE PACKAGES IDT71256SA Integrated D evice T echnology, Inc. FEATURES: DESCRIPTION: • 32K x 8 CM O S static RAM • Equal access and cycle times — Commercial: 15/20/25/35/45/70ns • One Chip Select plus one Output Enable pin

Contextual Info: DATA SHEET M FC" / _/ MOS INTEGRATED CIRCUIT ¿¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K WORDS BY 16 BITS Description The /iPD482444 and ¿i PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262,144 words x 16 bits memory cell array structure. The serial access port can perform

Contextual Info: HB56UW472EJNB Series, HB56UW464EJNB Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-723B Z Rev.2.0 Jun. 12, 1997 Description The HB56UW472EJNB, HB56UW464EJNB belong to 8 Byte DIMM (Dual In-line Memory Module)

Contextual Info: KM44V4104A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 44V 4104A /A L/A LL/A S L is a high spe ed C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D ynam ic R andom A cce ss M em ory. Its d e sig n is o p tim iz e d fo r high

maa 502

Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Contextual Info: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik

TQFP 100 PACKAGE footprint

Abstract: TQFP 144 PACKAGE footprint bga 208 PACKAGE 144-BB BGA and QFP Package 256X8 208 BGA 72V3613 BI 7284 footprint tqfp 208
Contextual Info: Selector Guide for 6WDQGDUG 6WDQGDUG ,)2 ),)2 Products From IDT, the leading provider of FIFO solutions Standard Standard FIFO FIFO Products Products ¾ ¾ ¾ ¾ ¾ FIFO Quick Reference Guide ……………………… Featured Product: TeraSync FIFO Family ……….

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7402000CS/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD46128512-X is a high speed, low power, 134,217,728 bits 8,388,608 words by 16 bits CMOS Mobile

W29GL256P

Abstract: W29GL256
Contextual Info: W29GL256P 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE W29GL256P Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1 FEATURES . 1

Halbleiterbauelemente DDR

Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder

Contextual Info: HY HYUNDAI 514403B Series 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,

Contextual Info: IDT7132SA/LA IDT7142SA/LA CMOS DUAL-PORT RAM 1 6 K 2 K x 8 -B IT Integrated D evice T echnology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/35/55/100ns (max.) — Com mercial: 25/35/55/100ns (max,) — Com mercial: 20ns only in PLCC for 7132

Contextual Info: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

taa 723

Abstract: A0-A10J-1 A10C A10EC
Contextual Info: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM OS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4,194 ,3 0 4 x 4 tyt Static C olum n M ode C M O S DRAM s. Static Colum n M ode offers high speed ran d o m acce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2K Ref. o r 4 K R ef. , acce ss

M4164

Abstract: EZ 728 ST ez 724 ST EZ 728
Contextual Info: M 5 M 4 1 6 4 0 0 B J ,T P ,R T - 5 ,- 6 ,- 7 ,- 5 S ,- 6 S ,- 7 S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION ( TOP VIEW ) This is a family of 4194304-w o rd by 4-bit dynamic R AM S, fabricated with the high performance C M O S process,and is ideal

micron sram

Abstract: taa 723 MT5C2568 MT5C2568DJ-20
Contextual Info: OBSOLETE 3/1/95 MT5C2568 32K x 8 SRAM SRAM 32K x 8 SRAM FEATURES • High speed: 10, 12, 15, 20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with /C/E and /O/E options • All inputs and outputs are TTL-compatible

FZH 191

Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
Contextual Info: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine