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    Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction


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    FFH30US30S

    Abstract: FGH50N3 LD26 TA49485
    Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original
    fgh50n3150ocffh30us30sld26+1ta49485 PDF