FFH30US30S Search Results

FFH30US30S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FFH30US30S		Fairchild Semiconductor	TRANS IGBT CHIP N-CH 300V 75A 3TO-247	Original	PDF	150.75KB	8

FFH30US30S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	FGH50N3 FGH50N3 150oC.	PDF
FFH30US30S Abstract: FGH50N3 LD26 TA49485 Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	FGH50N3 FGH50N3 150oC. FFH30US30S LD26 TA49485	PDF
smps igbt Abstract: FFH30US30S igbt 150v 30a Contextual Info: FGH50N3 300 V SMPS IGBT April 2013 FGH50N3 300 V SMPS IGBT General Description Features Using Fairchild 's planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This	Original	FGH50N3 FGH50N3 O-247 IC110 smps igbt FFH30US30S igbt 150v 30a	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction

Original

FGH50N3 FGH50N3 150oC.

PDF

FFH30US30S

Abstract: FGH50N3 LD26 TA49485
Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction

Original

FGH50N3 FGH50N3 150oC. FFH30US30S LD26 TA49485

PDF

smps igbt

Abstract: FFH30US30S igbt 150v 30a
Contextual Info: FGH50N3 300 V SMPS IGBT April 2013 FGH50N3 300 V SMPS IGBT General Description Features Using Fairchild 's planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This

Original

FGH50N3 FGH50N3 O-247 IC110 smps igbt FFH30US30S igbt 150v 30a

PDF