TA49230 Search Results

IRF9150

Contextual Info: IRF9150 Data Sheet February 1999 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

RFK25

Abstract: RFK25P10 DRA 402 DIODE
Contextual Info: y*Rg*s RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: S IRFP9150, IRFP9151 S e m ico n d ucto r y -25A, -80V and -100V, 0.150 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -25A,-80V and-100V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

RFK25P10

Abstract: RFH25P "Harris Corporation 1998" RFK* Relay RFH25P08 RFH25P10 RFK25P08 TB334 rfh25
Contextual Info: [ /Title RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10 /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark RFH25P08, RFH25P10, RFK25P08, RFK25P10

IRFP9150

Abstract: IRFP150 IRFP9151 application notes irfp150
Contextual Info: IRFP9150 Data Sheet January 2002 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET Features • 25A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel

IRF9150

Contextual Info: IRF9150, IRF9151 HARRIS S E M I C O N D U C T O R -25A, -80V and -100V, 0.150 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -25A,-80V and-100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFP9150

Abstract: IRFP150 IRFP9151
Contextual Info: IRFP9150 Data Sheet August 1999 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor

application notes irfp150

Abstract: P-CHANNEL 25A TO-247 POWER MOSFET irfp9150
Contextual Info: IRFP9150 Data Sheet August 1999 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor

IRFP9150

Abstract: application notes irfp150
Contextual Info: IRFP9150 Data Sheet August 1999 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET File Number 2293.4 Features • 25A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel