G3N60B3
Abstract: HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460 2001 7a
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
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hgtd3n60b3shgt1s3n60b3shgtp3n60b3150oc+4g3n60b3hgtd3n60b3s9arhrd4602001 7a
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G3N60B3D
Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334 7a600v
Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
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hgtp3n60b3dhgt1s3n60b3ds150ocrhrd460+6ta49192g3n60b3dmosfet 4414hgt1s3n60b3ds9atb3347a600v
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HGT1S3N60B3S
Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
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hgtd3n60b3shgt1s3n60b3shgtp3n60b3150oc+1hgtd3n60b3s9a
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G3N60B
Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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hgtd3n60b3hgtd3n60b3shgt1s3n60b3hgt1s3n60b3s+5hgtp3n60b3gtd3n60b3s115ns1-800-4-harrisg3n60b
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G3N60B3
Abstract: G3N60B HGT1S3N60B3 HGT1S3N60B3S HGTD3N60B3 HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 Semiconductor 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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hgtd3n60b3hgtd3n60b3shgt1s3n60b3hgt1s3n60b3s+4hgtp3n60b3g3n60b3g3n60bhgtd3n60b3s9a
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HGT1S3N60B3DS
Abstract: HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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hgtp3n60b3dhgt1s3n60b3ds150ocrhrd460+3ta49192hgt1s3n60b3ds9atb334
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G3N60B3
Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HARRIS S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, Tc = 2 5 °C The HGTD3N60B3S, H G TD3N 60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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OCR Scan
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hgtd3n60b3hgtd3n60b3shgt1s3n60b3hgt1s3n60b3s+3hgtp3n60b31-800-4-harrisg3n60b3
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G3N60B3D
Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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hgtp3n60b3dhgt1s3n60b3ds150ocrhrd460+5ta49192g3n60b3dmosfet 4414hgt1s3n60b3ds9atb334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note
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HGT1S3N60B3S
Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
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hgtd3n60b3shgt1s3n60b3shgtp3n60b3hgtd3n60b3s9a+1rhrd460
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G3N60B3
Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
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hgtd3n60b3shgt1s3n60b3shgtp3n60b3g3n60b3+5transistor no c110transistor c110tr c110hgtd3n60b3s9ald26
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G3N60B3
Abstract: G3N60B HGTD3N60B3 TO-262AA equivalent
Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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hgtd3n60b3hgtd3n60b3shgt1s3n60b3hgt1s3n60b3s+4hgtp3n60b3g3n60b3g3n60bto-262aa equivalent
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