TA49095 Search Results

Contextual Info: RURP8120 Semiconductor 8A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <100ns JEDEC TO-220AC • Operating Temperature. +175°C • Reverse

RURP8120CC

Contextual Info: RURP8120CC Data Sheet January 2000 File Number 4792 8A, 1200V Ultrafast Dual Diode Features The RURP8120CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

rurp8120

Contextual Info: RURP8120 Data Sheet January 2000 File Number 3661.3 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

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Abstract: RURP8120
Contextual Info: RURP8120 S E M I C O N D U C T O R 8A, 1200V Ultrafast Diode April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <100ns JEDEC TO-220AC o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE

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Abstract: RURP8120
Contextual Info: RURP8120 Data Sheet January 2000 File Number 3661.3 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURP8120

Contextual Info: RURP8120 Data Sheet January 2002 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.