TA49009 Search Results

Contextual Info: HARRIS SEMICOND SECTOR bûE D • 43D2271 GÜSGS1S n i HHAS HGTG20N120E2 34A, 1200V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP VIP N • 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns t COLLECTOR BOTTOM SIDE

TA49009

Contextual Info: HGTG20N120E2 34A, 1200V N-Channel IGBT December 1993 Package Features • JEDEC STYLE TO-247 TOP VIEW 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance i COLLECTOR • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switch­

G20N120E2

Abstract: AN7254 AN7260 HGTG20N120E2 LD26 HGTG
Contextual Info: HGTG20N120E2 S E M I C O N D U C T O R 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL

G20N120E2

Abstract: AN7254 AN7260 HGTG20N120E2 LD26
Contextual Info: HGTG20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss

20N120E2

Contextual Info: S m a r r ì H G T G 2 0 N 120E2 34A, 1200V N-Channel IGBT A pril 1995 Package Features JE D E C S TYLE TO -247 • 3 4 A ,1 2 0 0 V • L atch F ree O p era tio n • Typ ica l Fall T im e - 7 80 n s • H igh In p u t Im p e d a n c e • Lo w C o n d u c tio n Loss