TA4103F Search Results

Contextual Info: TOSHIBA TA4103F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 1 0 3 F 1.9GHz BAND UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced MIX circuit • High conversion gain: • Recommended operating voltage :

TA4103F

Contextual Info: TA4103F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4103F 1.9 GHz Band Up Converter Application Features l Built in Lo and IF buffer amplifiers. l Double balanced MIX circuit l High conversion gain: GC = 3dB typ. l Recommended operating voltage: VCC = 2.7~3.3 V

TA4103F

Contextual Info: TA4103F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4103F 1.9 GHz Band Up Converter Application Features Built in Lo and IF buffer amplifiers. Double balanced MIX circuit High conversion gain: GC = 3dB typ. Recommended operating voltage: VCC = 2.7~3.3 V

Contextual Info: TA4103F TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA410 3 F 1.9GHz BAND UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced MIX circuit • High conversion gain: • Recommended operating voltage :

TA4103F

Abstract: 2406MHz
Contextual Info: TOSHIBA TA4103F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 1 03F 1.9GHz BAND UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced M IX circuit • High conversion gain: • Recommended operating voltage :

Contextual Info: TOSHIBA TA4103F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A A1 m m m • ■ n3 mm SILICON MONOLITHIC F m 1.9GHz B A N D UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced MIX circuit High conversion gain C.S- =

Contextual Info: TO SH IBA TA4103F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 1 03F 1.9 GHz BAND UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced MIX circuit • High conversion gain : • Recommended operating voltage :

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz