20DBMW Search Results

Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)

TA4018F

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

TA4017FT

Contextual Info: TA4017FT TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4017FT VHF Wide Band Amplifier Applications Features • High gain: |S21|2 = 13dB @45 MHz • Low distortion: IM3 = 42dB (@45 MHz) • Operating supply voltage: VCC = 4.75 V~5.25 V Weight: 0.0045g (typ.)

Contextual Info: TOSHIBA TA4103F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 1 0 3 F 1.9GHz BAND UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced MIX circuit • High conversion gain: • Recommended operating voltage :

TG2006F

Contextual Info: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V Low current consumption: It = 130 mA typ. Small package: SM8 package (2.9 x 2.8 × 1.1mm)

TD6124

Abstract: SIP7 TD6116P TD6118P TD6120P TD6122P TD6124P TD6126P ecl prescaler
Contextual Info: TO SH IBA TD6116,18,20,22,24,26P TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD6116P, TD6118P, TD6120P TD6122P, TD6124P, TD6126P 1.2GHz PRESCALER The TD6116P~6126P prescalers integrate a high-sensitivity prescaler of the max. input frequency, 1.2GHz into the

VCO Og

Abstract: PN100 TA1248F PN10k 3 phase digital voltmeter circuit diagram
Contextual Info: TOSHIBA TENTATIVE TA1248F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 1 2 48 F 11 Q DEMODULATION IC FOR DIGITAL SATELLITE RECEIVER FEATURES • Supply voltage : 5V • Second IF AGC amp • dB-linear signal level amp • Sync, quasi-sync detect PLL

Contextual Info: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

Contextual Info: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

Contextual Info: TA4017FT TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4017FT VHF Wide Band Amplifier Applications Features • High gain: |S21|2 = 13dB @45 MHz • Low distortion: IM3 = 42dB (@45 MHz) • Operating supply voltage: VCC = 4.75 V~5.25 V SSOP6-P-0.65

2SK3079A

Contextual Info: 2SK3079A 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK3079A ○ 470 MHz 帯増幅用 単位: mm ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい

TA4018F

Abstract: 11515DB
Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain · Gain control range: GR = 37dB (@45 MHz) · Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

Contextual Info: T O SH IB A TENTATIVE TD7603Z/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD7603Z, TD7603F FREQUENCY SYNTHESIZERS FOR T V /CATV The TD7603Z, TD7603F is a single-chip frequency synthesizer 1C, which can configure high-performance frequency synthesizer systems in combination with a ¿¿CPU

TA4018F

Abstract: 45 MHz
Contextual Info: TA4018F 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA4018F VHF 電力利得制御増幅用 特 長 : |S21|2 = 11dB 最大） z 高利得 (@45 MHz z 利得制御範囲: GR=37dB (@45MHz) z 電源電圧 : VCC = 4.75~5.25V z 低歪

Contextual Info: T O SH IB A TENTATIVE TA1235FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 1235FN l/Q DEMODULATOR FOR DIGITAL CATV The TA1235FN is l/Q demodulator IC for Digital Cable Application. This IC integrates 2nd IF gain control amp, oscillator, mixers, RF-AGC control function and l/Q

S-AU86

Contextual Info: S-AU86 TOSHIBA RF POWER AMPLIFIER MODULE S-AU86 ○RF POWER AMPLIFIER MODULE for 800MHz Digital MCA MAXIMUM RATINGS Tc = 25℃, ZG = ZL = 50Ω CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 9 V Pi 320 mW Tc (opr) -30~100

TD6380

Abstract: TD6380N TD6380P TD6380Z TD6381N TD6381P TD6381Z TD6382N TD6382P TD6382Z
Contextual Info: TOSHIBA TD6380,81,82P/N/Z TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD6380P, TD6380N, TD6380Z, TD6381P, TD6381N, TD6381Z, TD6382P, TD6382N, TD6382Z FREQUENCY SYNTHESIZER FOR TV/CATV A series of TD6380~6382 are a single-chip frequency synthesizer IC, which can configure high-performance

Contextual Info: TOSHIBA TENTATIVE TA1248F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T• mAm , 1m 7 A 8 SILICON MONOLITHIC F ■ I / Q DEMODULATION IC FOR DIGITAL SATELLITE RECEIVER FEATURES • Supply voltage : 5V • Second IF AGC amp • dB-linear signal level amp • Sync, quasi-sync detect PLL

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

2sk3078

Contextual Info: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm • • • Output power: Po > = 28.0dBmW Gain: Gp > = 8.0dB Drain Efficiency: ηD > = 50% Maximum Ratings Ta = 25°C Characteristics

2SK3078

Contextual Info: 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 28.0dBmW • Gain: Gp ≥ 8.0dB • Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics

Contextual Info: 2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These