TA40 Search Results

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

S211 equivalent

Abstract: AFL1 S211
Contextual Info: T O SH IB A TA4011F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A A fl 1 1 F m m m • ■ ■ ■ UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current Içç = 3.5mA • Wide Band f = 2.4GHz 3dB down • VCC = 1-5~3V Operating Supply Voltage

C1308

Abstract: FS21
Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4004F VHF-UHF WIDE BAND AMPLIFIER „ . . „ Band Width 1.2GHz Typ. (3dB down, Vcc=2V) High Gain: f S21 |2= 1 .05dB(Typ.) (f=500MHz, Vcc=2V) Operating Supply Voltage : Vcc=2-5V Low Current Operation

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4001F VHF UHF WIDE BAND AMPLIFIER . Band Width 2.4GHz Typ. (3dB down) . High Gain : | S21 |2=12.5dB(Typ.) (f=500MHz) . 50Q Input and Output Impedance . Small Package MAXIHUM RATINGS (Ta=25°C) CHARACTERISTIC

Contextual Info: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features z Low current: ICC = 3.5 mA z Wide band: f = 2.4 GHz 3dB down z Operatin supply voltage: VCC = 1.5 to 3 V Pin Assignment Weight: 0.006 g (typ.)

Contextual Info: TO SHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4003F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.5CHz Typ. (3dB down, V CC = 2V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500MHz, V CC = 2V) • Operating Supply Voltage : V ( x = 2~3V

TA4018F

Contextual Info: TA4018F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4018F VHF Gain Control Amplifier Application Features • High gain: |S21|2 = 11dB @45 MHz, at Maximum gain • Gain control range: GR = 37dB (@45 MHz) • Low distortion: IM3 = 42dB (@45 MHz, at Maximum gain)

TA4013F

Contextual Info: TOSHIBA TA4013F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4013 F UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • High Power : PoldB = 3dBmW • Wide Band : f= 1.7G H z 3dB down • Operating Supply Voltage : V ( x = 1.5~3V _ SSOP5-P-0.95

TA4015FE

Abstract: TA4015FT
Contextual Info: TO SH IBA TA4015FE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4015FE TA4015FE USE FOR CRYSTAL OSCILLATORS FEATURES • Bias resistors, a transistor for oscillation and a transistor for buffer are packed in one package; hence, TA4015FT can easily compose a crystal oscillator.

TA4007F

Contextual Info: TOSHIBA TA4007F TOSHIBA MOS TYPE INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 7 F TV TUNER VHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account of this Device built in Bias Circuit, Cut down number of articles. • Low Noise Figure

Contextual Info: TO SH IBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 3 F VHF-UHF WIDE BAND AMPLIFIER FEATURES • Band Width 1.5 CHz Typ. (3dB down, VCc = 2 V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500 MHz, VCc = 2V) • Operating Supply Voltage

TA4017FT

Contextual Info: TA4017FT TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4017FT VHF Wide Band Amplifier Applications Features • High gain: |S21|2 = 13dB @45 MHz • Low distortion: IM3 = 42dB (@45 MHz) • Operating supply voltage: VCC = 4.75 V~5.25 V Weight: 0.0045g (typ.)

marking s222

Abstract: S12P S222 TA4004F
Contextual Info: TOSHIBA TA4004F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 4 F V H F-U H F WIDE BAND AMPLIFIER FEATURES • Band Width 1.2GHz Typ. (3dB down, • V qq = 2V) High Gain : |S2112 = 10.5dB (Typ.) (f = 500MHz, VCC = 2V) • Operating Supply Voltage :

Contextual Info: TOSHIBA TA4012F TO SHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4012F UHF W IDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : l x = 6.5 mA • W id e Band : f = 2.0 GHz (3 d B dow n • Operating Supply Voltage : V q q = 1.5~2.2V

Contextual Info: TA4032FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4032FT ○ UHF Band Low Noise Amplifier Applications ・Thin Extreme Super mini Quad Package 4pin :TESQ FEATURES • Low Noise Figure:NF=1dB(Typ.) (@ f=1.575GHz) • High Gain:|S21e|2=14.8dB(Typ.) (@ f=1.575GHz)

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY TA40-11YWA YELLOW Features Description !4.0 INCH MATRIX HEIGHT. The Yellow source color devices are made with Gallium ! DOT Arsenide Phosphide on Gallium Phosphide Yellow Light SIZE 10mm. !LOW CURRENT OPERATION. Emitting Diode.

SSOP5-P-0.95 toshiba

Abstract: S211
Contextual Info: TOSHIBA TA4012F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A A fl 1 1 F • mm. m ■ UHF W ID E BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : lcc = 6.5mA • Wide Band : f = 2.0GHz 3dB down • Operating Supply Voltage : V q q

KDA0398

Abstract: TA40-11EWA TA40-11GWA TBA40-11EGWA TBA40-12EGWA TBC40-11EGWA TBC40-12EGWA TC40-11EWA
Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAYS TA40-11EWA/GWA/YWA/SRWA TC40-11EWA/GWA/YWA/SRWA TBA40-11EGWA TBC40-11EGWA TBA40-12EGWA TBC40-12EGWA Features ! 4.0 Description INCH MATRIX HEIGHT. ! DOT The High Efficiency Red source color devices are made SIZE 10mm.

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY TA40-11SRWA Features z4.0 Description INCH MATRIX HEIGHT. zDOT zLOW The Super Bright Red source color devices are made SIZE 10mm. zHIGH with Gallium Aluminum Arsenide Red Light Emitting CURRENT OPERATION. zSTACKABLE

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY TA40-11SRWA Features z4.0 Description INCH MATRIX HEIGHT. zDOT zLOW The Super Bright Red source color devices are made SIZE 10mm. zHIGH with Gallium Aluminum Arsenide Red Light Emitting CURRENT OPERATION. zSTACKABLE

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY TA40-11EWA Features z4.0 Description INCH MATRIX HEIGHT. zDOT zLOW HIGH EFFICIENCY RED The High Efficiency Red source color devices are made with SIZE 10mm. Gallium Arsenide Phosphide on Gallium Phosphide Orange CURRENT OPERATION.

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY P/N: TA40-11SRWA Features z4.0 Description INCH MATRIX HEIGHT. zDOT zLOW The Super Bright Red source color devices are made SIZE 10mm. zHIGH with Gallium Aluminum Arsenide Red Light Emitting CURRENT OPERATION. zSTACKABLE

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY TA40-11YWA Features z4.0 Description INCH MATRIX HEIGHT. zDOT zLOW YELLOW The Yellow source color devices are made with Gallium SIZE 10mm. Arsenide Phosphide on Gallium Phosphide Yellow Light CURRENT OPERATION. Emitting Diode.

Contextual Info: 101.6mm 4.0 INCH 5x7 DOT MATRIX DISPLAY TA40-11EWA Features z4.0 Description INCH MATRIX HEIGHT. zDOT zLOW HIGH EFFICIENCY RED The High Efficiency Red source color devices are made with SIZE 10mm. Gallium Arsenide Phosphide on Gallium Phosphide Orange CURRENT OPERATION.