TA17656 Search Results

2E12

Abstract: FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1 FSF150R3
Contextual Info: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSYA150D, FSYA150R S e m iconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

fsf150

Abstract: MIL-S-19500 2E12 FSF150D FSF150R
Contextual Info: S E M I C O N D U C T O R FSF150D, FSF150R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 25A Note 1 , 100V, rDS(ON) = 0.070Ω • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects

MIL-S-19500

Abstract: FSF150R3 2E12 FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1
Contextual Info: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Rad Hard in Fairchild for MOSFET

Abstract: 2E12 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3 SMD TRANSISTOR br-37
Contextual Info: FSYA150D, FSYA150R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1 L 0380 R

Contextual Info: FSYA150D, FSYA150R Semiconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

smd diode 39a

Abstract: smd 39a FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3 2E12 FSYA150D
Contextual Info: FSYA150D, FSYA150R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Rad Hard in Fairchild for MOSFET

Contextual Info: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSF150R4 JANSR2N7405 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 70 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 70 m, d rd, Features Description • 25A (Note), 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Intersil Corporation has

2E12

Abstract: FSF150R4 JANSR2N7405
Contextual Info: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: JANSR2N7405 S E M I C O N D U C T O R September 1997 Formerly Available As FSF150R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Harris Semiconductor

Contextual Info: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
Contextual Info: FSYA150D, FSYA150R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: a h a r r is S E M I C O N D U C T O R FSF150D, FSF150R " " m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 25A Note 1 , 100V, rDS(ON) = 0.070H • Total Dose - • Single Event - • Dose Rate TO-254AA Meets Pre-Rad Specifications to 100kRAD(Si)

Contextual Info: h a r r is S E M I C O N D U C T O R FSF150D, FSF150R " • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 2 5 A N ote 1 , 100V, rDS(ON) = 0.070Q. TO-254AA • Total Dose - M eets Pre-Rad Specifications to 100kRAD(Si)

Contextual Info: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

TA17656

Contextual Info: & MAH«» FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description Features rp s O N = 0-0700 • Total Dose - Meets Pre-RAO Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects