TA09850 Search Results

IRFPG40

Contextual Info: IRFPG40 Data Sheet July 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET • 4.3A, 1000V • rDS ON = 3.500Ω • UIS SOA Rating Curve (Single Pulse) • -55oC to 150oC Operating and Storage Temperature Symbol D G Formerly developmental type TA09850.

TO247 CASE

Contextual Info: IRFPG40 Data Sheet July 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET • 4.3A, 1000V • rDS ON = 3.500Ω • UIS SOA Rating Curve (Single Pulse) • -55oC to 150oC Operating and Storage Temperature Symbol D G Formerly developmental type TA09850.

RF1S4N100SM

Abstract: RFP4N100 TB334
Contextual Info: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs August 1999 File Number 2457.4 Features • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such

F1S4N100

Abstract: fp4n100
Contextual Info: intensi RFP4N100, RF1S4N100SM D ata S h e e t 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such

Contextual Info: RFP4N100, RF1S4N100SM D ata S h eet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancem ent mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor

IRFPG42

Abstract: IRFPG40
Contextual Info: IRFPG40, IRFPG42 S E M I C O N D U C T O R 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • IRFPG40: 4.3A, 1000V, rDS ON = 3.5Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

RFP4N100

Abstract: RF1S4N100SM TB334
Contextual Info: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor

RF1S4N100SM

Abstract: RFP4N100 TB334
Contextual Info: RFP4N100, RF1S4N100SM Data Sheet Title FP4 00, P4 00S bt 3A, 00V, 00 m, gh lte, Cha el wer OST utho eyrds ter- August 1999 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Features The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect

IRFPG40

Contextual Info: IRFPG40 Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: S IRFPG40, IRFPG42 S e m ico n d ucto r y 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Description Features • IRFPG40: 4.3A, 1000V, r D S O N = These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power