TA 8225 Search Results

Contextual Info: Preliminary Datasheet RJK2576DPA 250V - 17A - MOS FET High Speed Power Switching R07DS0860EJ0200 Rev.2.00 Feb 05, 2013 Features • Low on-resistance RDS on = 0.102  typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25C)

Contextual Info: Preliminary Datasheet RJK2576DPA 250V - 17A - MOS FET High Speed Power Switching R07DS0860EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.102  typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25C)

Contextual Info: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)

Contextual Info: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0100 Rev.1.00 Jul 27, 2012 Features • Very low on-resistance RDS on = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)

Contextual Info: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)

Contextual Info: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0200 Rev.2.00 Jan 08, 2013 Features • Very low on-resistance RDS on = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)

OD128

Abstract: HA 13431 chen yi tda 2850
Contextual Info: M CRF20 2 Pa ssive RFID Device w ith Sensor Inpu t FEATU RES • Sens or inpu tpola rity inverts da ta s trea m • Rea d only da ta tra ns m is s ion • 96- or 128-bits offa ctory prog ra m m ing u s er m em ory a ls o s u pports 48 a nd 64-bitprotocols

Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

rjh60f5

Abstract: rjh60f5dpk RJH60F5D RJH60F RJH60 R07DS0055EJ0200 PRSS0004ZE-A SC-65
Contextual Info: Preliminary Datasheet RJH60F5DPK R07DS0055EJ0200 Previous: REJ03G1836-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Datasheet RJP65S04DWT / RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0200 Rev.2.00 Oct 09, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • High speed Switching

RJP60V0DPM

Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Features • High breakdown-voltage  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA 1250V - 100A - IGBT Application: Inverter R07DS0829EJ0100 Rev.1.00 Jan 23, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP65S04DWT/RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed Switching

RJH60F4

Contextual Info: Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 Previous: REJ03G1835-0200 Rev.3.00 Nov 17, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP65S07DWT/RJP65S07DWA 650V - 150A - IGBT Application: Inverter R07DS0824EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)  High speed Switching

PIC16C505

Contextual Info: PIC16C505 PIC16C505 Rev. A Silicon Errata Sheet The PIC16C505 Rev. A parts you have received conform functionally to the Device Data Sheet (DS40192C), except for the anomalies described below. FIGURE 1: PIC16LC505 VOLTAGE-FREQUENCY GRAPH, -40°C ≤ TA ≤ 0°C

Contextual Info: Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter R07DS0827EJ0100 Rev.1.00 Jan 23, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJP1CS07DWT/RJP1CS07DWA 1250V - 150A - IGBT Application: Inverter R07DS0830EJ0100 Rev.1.00 Jan 23, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching

Contextual Info: Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter R07DS0826EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching