TA 2040 AMPLIFIER Search Results

TA 2040 AMPLIFIER

Contextual Info: Linear Amplifier LM2109 Product Features Application • GaAs MESFET • No matching circuit needed • High IP3 • Surface Mount Hybrid Type & Reel Packing • Small Size • Alumina Substrate • Pb Free / ROHS Standard • PCS Repeater • RF Sub-Systems

Contextual Info: Linear Amplifier LM2109 Product Features Application • GaAs MESFET • No matching circuit needed • High IP3 • Surface Mount Hybrid Type & Reel Packing • Small Size • Alumina Substrate • Pb Free / RoHS Standard • PCS Repeater • RF Sub-Systems

cp16a

Contextual Info: Linear Amplifier LM2109-L Product Features Applications • GaAs MESFET • No matching circuit needed • High IP3 • Surface Mount Hybrid Type & Reel Packing • Small Size • Alumina Substrate • Pb Free / RoHS Standard • PCS Repeater • RF Sub-Systems

2SB1122

Abstract: 2SD1622
Contextual Info: Ordering number:2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications Package Dimensions • Voltage regulators relay drivers, lamp drivers, electrical equipment. unit:mm 2038 [2SB1122/2SD1622]

2SD1622

Abstract: 2SB1122 ITR08877 ITR08878
Contextual Info: Ordering number:ENN2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications Package Dimensions • Voltage regulators relay drivers, lamp drivers, electrical equipment. unit:mm 2038A [2SB1122/2SD1622]

7905 SO8

Abstract: AN 7591 POWER AMPLIFIER MRFIC1808 MRFIC1808DMR2 MRFIC1808R2 SO-8 4425 8856 micro 9942 SO8 t 06 marking 59 601 508 so8
Contextual Info: Order this document by MRFIC1808/D MRFIC1808 LAST SHIP 18/06/00 1.9 GHz GaAs Low Noise Amplifier • • • • • • • • 1.9 GHz GaAs LOW NOISE AMPLIFIER SEMICONDUCTOR TECHNICAL DATA 19 dB Typ Gain MRFIC1808 , 18 dB (MRFIC1808DM) 8 1.6 dB Typ Noise Figure

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

Die Attach and Bonding Guidelines

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
Contextual Info: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in

Contextual Info: Thp\ mi.TM H EW LETT PACKARD 20-40 GHz Amplifier Technical Data HMMC-5040 Features • Large Bandwidth: 20 - 44 GHz Typical 21-40 GHz Specified • High Gain: 22 dB Typical • Saturated Output Power: 21 dBm Typical • Supply Bias: < 4.5 volts @ < 300 mA

transistor motorola 351

Abstract: MRFIC1808 MRFIC1808DMR2 2C46
Contextual Info: Order this document by MRFIC1808/D MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT), Japan’s Personal Handy System (PHS) and the emerging North American

AN 7591 POWER AMPLIFIER

Abstract: motorola 6828 MRFIC1808 7905 SO8 marking 9448 MRFIC 917 9631 MOTOROLA CMOS 4560 motorola
Contextual Info: MOTOROLA Order this document by MRFIC1808/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT),

MRFIC1808

Abstract: MRFIC1808R2 PF 0849 B 4093 motorola motorola 8822 MRFIC 917 ta 8892 an
Contextual Info: MOTOROLA Order this document by MRFIC1808/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT),

XTR 513

Abstract: 6MB 125 S-1 2 0 l
Contextual Info: Magnetic disk tCs Read/Write Amplifier for FDD BH6625FS •The BH6625FS is a 4-m ode read/ write 1C designed for flo p p y disk drives, and has an active fitter that can be set according to transfer rate. Any of multiple write current settings can be selected, and inner edge/outer edge switch­

Contextual Info: Communication ICs Read/Write Amplifier for FDD BH6625FS T he BH6625FS is a 4 -m od e re a d /w rite 1C de sig n e d fo r flo p p y disk drives, and has an active filte r th a t can be set according to transfer rate. Any o f m ultiple write current settings can be selected, and inner e d g e /o u te r edge switch­

capacitor mttf

Abstract: T491C105K0 AN1955 MD7P19130H MD7P19130HR3 MD7P19130HSR3 GRM55DR61H106KA88B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

Contextual Info: ARCHIVED฀BY฀FREESCALE฀SEMICONDUCTOR,฀INC.฀2005 Order this document by MRFIC1808/D MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT),

MOTOROLA 935

Abstract: transistor motorola 351 MRFIC1808 MRFIC1808DMR2 Motorola 0936 2C46 motorola marking 723 m1808
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRFIC1808/D MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT),

5032

Abstract: Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power and 8 dB of small-signal gain from a small easy-to-use

Contextual Info: W KSÌ HEWLETT minMPACKARD 17.7-32 GHz Power Amplifier Ifechnical Data HMMC-5033 F eatures • 26 dBm Output P ] ^ at 28 GHz • High Gain: 18 dB • 50 Q, Input/Output M atching • Sm all Size D escription The HMMC-5033 is a MMIC power amplifier designed for use in

Contextual Info: minMPACKARD W KSÌ HEWLETT 17.7- 32 GHz Amplifier Ifechnical Data HMMC-5032 F e a tu re s • 22 dBm O utput P ] (1]5 • 8 dB Gain. • 50 Q. Input/O utput M atching • S m all S iz e • B ia s: 4.5 V olts, 250 mA D escrip tion The HMMC-5032 is a MMIC power

Contextual Info:  17.7-32 GHz Power Amplifier HMMC-5033 Features • 26 dBm Output P -1dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching Chip Size: Chip Size Tolerance: Chip Thickness: 2.74 x 1.31 mm (108 × 51.6 mils) ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils)

2SC3571

Abstract: 400V to 5V DC Regulator npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier

400V voltage regulator

Abstract: 2SC3571 DC DC converter 5v to 400V npn transistors 400V 3A DC DC converter 400V
Contextual Info: Inchange Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier

Contextual Info: H EW LETT 1"KM P A C K A R D 2 0 - 4 0 GHz Amplifier Technical Data HMMC-5040 Features • Large Bandwidth: 20 - 44 GHz Typical 21-40 GHz Specified • High Gain: 22 dB Typical • Saturated Output Power: 21 dBm Typical • Supply Bias: < 4.5 volts @ < 300 niA