T855C Search Results

405C

Abstract: NLAS3699 NLAS3699MN1R2G STG3699
Contextual Info: NLAS3699 Dual DPDT Ultra−Low RON Switch The NLAS3699 is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699 can handle a balanced

405C

Abstract: NLAS3699B NLAS3699BMN1R2G STG3699
Contextual Info: NLAS3699B Dual DPDT Ultra−Low RON Switch The NLAS3699B is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699B can handle a

555C

Abstract: NLAS9431 NLAS9431MTR2G WQFN16 WQFN-16
Contextual Info: NLAS9431 Low Voltage Single Supply Dual DPDT Analog Switch The NLAS9431 is an advanced dual−independent CMOS double pole−double throw DPDT analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining CMOS low power

555C

Abstract: NLAST9431 NLAST9431MTR2G WQFN16 WQFN-16
Contextual Info: NLAST9431 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST9431 is an advanced CMOS dual−independent DPDT double pole−double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high−speed propagation delays and low ON resistances while maintaining CMOS low−power

Contextual Info: MICROPAC INDUSTRIES INC 1SE D ma • bllEbHO QODOt:?^ T - S 'O - t ? 200-400 MHz MVH 2242 VOLTAGE CONTROLLED OSCILLATOR S ER IES - _ > _ PRELIMINARY’ VOLTAGE & TEMPERATURE STABILIZED OSCILLATOR SUBSYSTEM FEATURES:

405C

Abstract: MAX4783 NLAS4783 NLAS4783MN1R2G
Contextual Info: NLAS4783 Triple SPDT 1.0 W RON Switch The NLAS4783 is a triple independent ultra−low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783

555C

Abstract: MAX4685 NLAS4685 T-014 489AA
Contextual Info: NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

555C

Abstract: MAX4685 NLAS4685 NLAS4685FCT1 NLAS4685FCT1G
Contextual Info: NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and

Contextual Info: NLAS44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAS44599 is an advanced dual−independent CMOS double pole−double throw DPDT analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining CMOS low power

Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual−independent DPDT double pole−double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high−speed propagation delays and low ON resistances while maintaining CMOS low−power

485G

Abstract: 948F A114 A115 C101 JESD22 NLAST44599
Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual−independent DPDT double pole−double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high−speed propagation delays and low ON resistances while maintaining CMOS low−power

485G

Abstract: 948F A114 A115 C101 JESD22 NLAST44599
Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual−independent DPDT double pole−double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high−speed propagation delays and low ON resistances while maintaining CMOS low−power

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

NLAB

Abstract: NLAS4783B 405C MAX4783 NLAS4783BMN1R2G
Contextual Info: NLAS4783B Triple SPDT 1.0 W RON Switch The NLAS4783B is a triple independent low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783B

NLAS

Abstract: 405C MAX4783 NLAS4783 NLAS4783MN1R2G
Contextual Info: NLAS4783 Triple SPDT 1.0 W RON Switch The NLAS4783 is a triple independent ultra−low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783

4783

Abstract: 405C MAX4783 NLAS4783B NLAS4783BMN1R2G jedec package MO-220 QFN 20
Contextual Info: NLAS4783B Triple SPDT 1.0 W RON Switch The NLAS4783B is a triple independent low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783B

STG3699

Abstract: 405C MO-220 NLAS3699 NLAS3699MN1R2G QFN-16
Contextual Info: NLAS3699 Dual DPDT Ultra-Low RON Switch The NLAS3699 is a dual independent ultra-low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699 can handle a balanced

555C

Abstract: MAX4684 NLAS4684 NLAS4684FCT1 NLAS4684FCT1G 4684
Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

485G

Abstract: 948F A114 A115 C101 JESD22 NLAS44599 cd 124
Contextual Info: NLAS44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAS44599 is an advanced dual−independent CMOS double pole−double throw DPDT analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining CMOS low power

Contextual Info: NLAS4783 Triple SPDT 1 Ohm RON Switch The NLAS4783 is a triple independent ultra−low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and