T777777 Search Results

2SC4116GR

Abstract: ADS varactor diode 15 K26 011110 drivers 5k21 KRY 112 46 KRY 112 75/1 TC9318FA tc9318 4bit counter KRY 112 75
Contextual Info: TOSHIBA TC9318FA/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9318FA, TC9318FB SINGLE CHIP DTS MICROCONTROLLER DTS-21 The TC9318FA and TC9318FB are a 4bit CMOS microcontroller for signal chip digital tuning systems. It is capable of functioning at a low voltage of 3V and

Contextual Info: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page

256KX4

Abstract: V53C104B V53C104 casco battery
Contextual Info: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L 80/80L Max. RAS Access Time, tp ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)

V52C8128

Abstract: V52C8128-80
Contextual Info: MOSEL- VITELIC V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 70 PRELIMINARY 80 10 Max. RAS Access Time, tRAc 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAc) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ )

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

2n5484 equivalent

Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G

3240B

Contextual Info: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-381B Z Rev. 2.0 Jan. 7, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.

AD0832

Abstract: ISP-8A/600
Contextual Info: ISP-8A/600-I DESCRIPTION FEATURES SC/MP Simple Cost-effective M icroproc­ essor is a single-chip 8-bit microprocessor packaged in a standard, 40-pin, dual-in-line package. • Simpler interfacing • Bidirectional Tri-state 8-bit data bus • TTL-com patible inpul/output inter­

motorola application note mc14534

Abstract: 14584b MC14534 MC14518 eb47 mc1696 MCI4518 MC14508 mc14583b mecl data
Contextual Info: Order this document by EB47/D Direct Count Technique Latches for High-Resolution Prescaling Technique Counters EB 47 INSTRUMENTATION m e e n n c / By: JOe Ròy,‘ IndùstnâfVLogic Applications Event Counter and Storage Latches for High-Frequency, High-Resolution Counters

NIPPON SMG

Abstract: 5216805 gt77
Contextual Info: HM5216405 Series Preliminary 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI All Inputs and outputs are referred to the rising edge of the clock input. The HM5216405 is offered In 2 banks for improved performance. Features R b v . 0.1 Apr. 5 ,1 9 9 5

SN74ACT3631

Abstract: SN74ACT3641 SN74ACT3651 1A32J
Contextual Info: SN74ACT3651 2048 x 36 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCAS439 - JUNE 1994 Output-Ready OR and Almost-Empty <AE) Flags Synchronized by CLKB Low-Power 0.8-Micron Advanced CMOS Technology Supports Clock Frequencies up to 67 MHz Fast Access Times of 11 ns

Contextual Info: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5% Power Supply

Contextual Info: M D K l W N N 5 1 V 4400 B s e rie s Fast Page Mode CMOS 1Mx4bit Dynamic RAM DESCRIPTION The N N 51V4400B series is a high perform ance CMOS Dynam ic Random A ccess M em ory organized as 1,048,576 words by 4 bit. The N N 51V4400B series is fabricated with advanced C M OS technology and designed with innovative de­

V53C104

Abstract: l04b 256KX4 V53C104B tnr dip mil std v53c104b80
Contextual Info: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 6 0 /6 0 L 7 0 /7 0 L 8 0 /80L Max. RAS Access Time, t p ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)

Contextual Info: MOSEL V IT E U C V53C16256H 2 5 6 K X 16 CMOS DYNAMIC RAM WITH SELF REFRESH PRELIMINARY HIGH PERFORMANCE 45 SO 55 60 Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tcAA> 22 ns 25 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC)

MN6126A

Abstract: MN6126 T74G N15K
Contextual Info: PANASONIC IN D L / E L E K -CIO 7S 69328.52 P A N A S O N I C D E jb ^ E flS S □0GL,73C] □ INDLtELECTRONIC 72C 0 6 7 3 9 D MN6126, MN6126A . M N 6 1 2 6 , M N 6 1 2 6 A h— • Wl Tone Squelch fo r Com munication C ontrol H M N6126. ■ MN6126A l i . ± l c ^ - f

NEC uPD

Abstract: 4264405 D42S65405
Contextual Info: DATA SHEET NEC / _/ MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿/PD4264405, 42S65405, 4265405 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs w ith optional EDO. EDO is a kind of the page m ode and is useful fo r the read operation.

Contextual Info: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE

ks531

Abstract: TC9318FA
Contextual Info: TOSHIBA TC9318FA/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9318FA, TC9318FB SINGLE CHIP DTS MICROCONTROLLER D TS -21 The TC9318FA and TC9318FB are a 4bit CMOS microcontroller for signal chip digital tuning systems. It is capable of functioning at a low voltage of 3V and

85C330

Abstract: 85C320 t23h SiS 386
Contextual Info: SIS 85C 330 _ Data Buffer Rev 1.1 Prelim inary FEATURES • Provides 32 Bits Data Buffer between CPU and 386 A T System • Provides 128 Bytes Internal Cache Memory • Bus Conversion and Swap Logic for 32 Bits, 16 Bits and 8 Bits Transfers in CPU and DMA

Contextual Info: TOSHIBA TENTATIVE TC55V1326AFF-66 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1326AFF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM

6265 SRAM

Contextual Info: MOSEL- VITELIC MS6265 8K x 8 SLOW SPEED CMOS STA TIC RAM ULTRA LOW DATA RETENTION CURRENT Features Description • Available in 100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: MS6265 - 220mW (Max.) Operating - 5.5|iW (Max.) Power Down

Contextual Info: blE D • mSbSQB 002318b 721 ■ HIT2 HM514270/L Series Preliminary 262,144-word x 16-bit Dynamic Random Access Memory H IT A C H I/ The Hitachi HM514270 are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM514270 have realized higher density, higher performance

Contextual Info: Vertical Receptacles 2.00 mm .079" FCI basics Various housing heights to meet your specific design requirements: 2.10 mm, 2.30 mm, 3.00 mm, 4.00 mm, 4.50 mm Dual-beam contact design for highly reliable electrical performance High temperature plastic Selective plating