t3sb60
Abstract: t3sb 60 T3SB T3SB80 T3SB40 Huan Semiconductor
Contextual Info: T3SB Series SIP 4-AMPERE SILICON BRIDGE RECTIFIER Mechanical Data FEATURES • • • • • • Low Reverse Leakage Current Surge Overload Rating to 120A Peak Ideal for Printed Circuit Board Applications Epoxy Material – UL Recognition Flammability Classification 94V-0
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mil-std-202t3sb60t3sb80t3sb40+3t3sb 60t3sbhuan semiconductor
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DBS101G
Abstract: DBS10XG DBS MARKING CODE 106G DBS107G
Contextual Info: DBS101G - DBS107G TAIWAN SEMICONDUCTOR E RoHS Single Phase 1.0 AMR Glass Passivated Bridge Rectifiers DBS COM PLIANCE jM 7 < - « I J 'cuiod'- ' Features <> <> UL Recognized File # E-96005 Glass passivated junction Ideal fo r printed circuit board Reliable low cost construction utilizing m olded
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dbs101gdbs107ge-96c05/0-375n+4mil-std-202dbs10xgdbs marking code106g
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32r4610a
Abstract: 32R2020R VHZ 454
Contextual Info: 0253^5 OGOTBSS böl • SIL SSI 32R2320/21/22/23/24 3V, 5V, 4-Channel 2-Terminal Read/Write Device ¿ m c o n S M fa n s A TDK Group/Company I n fd F m a t io n October 1993 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS monolithic integrated circuit designed for use with twoterminal recording heads. They provide a low noise
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32r2320/21/22/23/24i324rw-4cv32r2324w-4cv32r4610a+232r2020rvhz 454
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aeg thyristors
Abstract: AEG T24F AEG T 51 N 1200 T72F aeg t 388 AEG T 509 N 1600 AEG T 25 N 1100 000130 aeg tt 46 n 1200 955 100 12 LAO
Contextual Info: 17E D • D aam ab 0G CH 305 s ■ T '- j i S ’ - o / Thyristoren für selbstgeführte Stromrichter Thyristors for seif-commutated converters Thyristors pour applications fréquence Typ Type Vdrm Vrrm V Itrmsm Itsm t=iOms M= *v max 45°C / ftlt hWM/tc t=1Oms
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vrm-50400hzaeg thyristorsaeg t24f+8aeg t 51 n 1200t72faeg t 388aeg t 509 n 1600aeg t 25 n 1100000130aeg tt 46 n 1200955 100 12 lao
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