T35-4 DIODE Search Results

TANTALUM capacitor 685 35K

Abstract: 335 35K 685k 100v capacitor a564 transistor capacitor 336 35K 102 capacitor 226 35K 022 electrolytic cat 7199 ca K277 capacitor 685 35K 106 16k
Contextual Info: F-3100C 5/99 KEMET CAPACITORS Parts shown are actual size KEMET also manufactures Ceramic Leaded, and Surface Mount Capacitors — Tantalum and Ceramic. Refer to Catalog F-3101 — Ceramic Leaded, and F-3102 — Surface Mount Capacitors for detailed information on these products. GR500

a564 transistor

Abstract: a684 transistor cat 7199 ca transistor a564 capacitor 226 35K 022 electrolytic transistor a684 A564 transistor datasheet up board exam date sheet 2012 D5653 B824 transistor
Contextual Info: TANTALUM LEADED CAPACITORS To find parts fast, visit at www.kemet.com. F-3100D 09/01 KEMET CAPACITORS Parts shown are actual size Due to ever changing technology, all series may not be depicted. Kemet Electronics Corporation P.O. Box 5928 • Greenville, SC 29606 • Tel: 864-963-6300

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

marking t17

Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Contextual Info: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3

T35 diode

Abstract: diode T35 high voltage diode T35 L501130 FDH3595 MMBD7000 MMBD1501-1505
Contextual Info: S e m i c o n d u c t o r " FDH3595 & Discrete POW ER & Signal Technologies „ . . National FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol TA = 25*C unless otherwise noted

M49C

Abstract: diodes 1N49A 17atm 1n4907 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A
Contextual Info: • 12.8 VOLT NOMINAL ZENER VOLTAGE •+ 5=c 1N 4896 thru ■TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N 4915A • LOW NOISE • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

byv31

Abstract: m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b
Contextual Info: BYV31 SERIES 5bE D PHILIPS INTERNATIONAL • 711DÔ2L 004135D bfifi BIPHIN T - 0 3 - t * J ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

Laser SDL 980

Abstract: Laser SDL
Contextual Info: M Ë ¡3 m S E R I E S t 03 980 nmr 150 mW CW InGaAs LASER DIODES 3 le y Features 980 nm Output Single Transverse Mode 150 mW cw Power Proven High Reliability Demonstrated High Coupling Effciency Erbium-Doped Fiber Amplifier Pumps Diffraction Limited Beam

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

Contextual Info: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200

TIL38

Abstract: fpe500 FPE530 FPE104 FPE106 FPE510 FPE520 FPE700
Contextual Info: 1-12 Infrared Photo Emitters If lF = 100 mA mA Max V Typ W avelength @ Peak Emission nm Typ vF Device No. D escription Axial Intensity lF = 100 mA m W /sr Typ Data Sheet Page No. FPE104 Lead Frame Package Narrow Beam 100 1.35 890 10 4-23 FPE106 Miniature .085" X .150" X .095"

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

20F001N

Abstract: SF1012 valor VALOR SF1012 YCL-20F001N 20f001n ycl diode T35 -4-D6 SF1012 valor ST7032 16PT-004S ycl 20f001n
Contextual Info: 5- &KLS%ULGJH • *OXHOHVVFRQQHFWLRQWRPRVW/$1 FKLSV • 8SWR0ESV6\QF:$1OLQN • 8SWRNESV$V\QF:$1OLQN ZLWKLQWHUQDOEDXGUDWHJHQHUDWRU • DGGUHVV/$1WDEOH • • • • • $785(6 • +LJKSHUIRUPDQFHVLQJOHFKLSIXOO

Contextual Info: m TAIWAN LITON E L E C T R O N I C LITE 4TE D • 0 0 0 3 3 2 2 IbB ■ TL INFRARED REMOTE CONTROL RECEIVER MODULES t -ii-w LTM-8837 FEATURES • EASY TO H A N D LE S M A L L TYPE M ODULE. •E X C E L L E N T M E C H A N IC A L L Y STRENG TH AND E L E C T R IC A L S T A B IL IT Y .

2N5861

Abstract: 2N5861 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F 1 ZE D I b 3b 75 5 4 GOflb44fl û | M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc Rating Collector Current — Continuous ic

Contextual Info: • International g ü Rectifier PD-9.623A IRFBC20 INTERNATIONAL R EC TIFIER HEXFET Power MOSFET • • • • • 46SSHS2 DOmTSG 3TT H I N R Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE D

Contextual Info: 4Ö554S5 G ü i s m a 3fl7 International Ss*] Rectifier INR PD-9.862 IRFL214 INTERNATIONAL RECTIFIER bSE D HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TOSHIBA CM OS DIGITAL INTEGRATED CIRCUIT TC74LVX02F, TC74LVX02FN, TC74LVX02FS DATA SILICON MONOLITHIC QUAD 2-INPUT NOR GATE The TC74LVX02 is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology.

high voltage diode T35

Abstract: T35 diode diode T35 DDD1013 OMD100F60HL OMD120L60HL OMD240N10HL OMD300N06HL TG73
Contextual Info: OMD120L60HL Preliminary Data Sheet OMD300N06HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •

diode T35 -4-D6

Contextual Info: D S 04 2 8 2 0 6 1 F FUJITSU SEMICONDUCTOR DATA SHEET ASSP 1 CHANNEL 8-BIT A/D CONVERTER MB40528 • DESCRIPTION The MB40528 is a full parallel comparison flash type 8-bit resolution analog-todigital converter, designed for various video and image processing applications.

IRKH162-14D20

Abstract: IRKH135-16D25
Contextual Info: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage

vc 150 inverter

Abstract: three phase inverter CONTROL circuit 102260 TI-743 three phase three level inverter
Contextual Info: PM150CSA060 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Intellimod Modules Three Phase IGBT Inverter Output 150 Amperes/600 Volts Description: Powerex Intellimod Modules are designed for applications requiring a high frequency (20kHz) output

rectifier s4 79

Abstract: Y145W IRFM064 IRFM064D i292 BBV 32 transistors
Contextual Info: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFMQ64 Product Summary The HEXFET® technology is the key to International Part Number BVq s s Rectifier's advanced line of power M O SFET transistors.

Contextual Info: PD 9.1663 International IOR Rectifier IR F R /U 9310 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -400V R D S (on) = 7 .0 Q