T21AT Search Results

HYB18H512322BF

Abstract: qimonda hyb18h5
Contextual Info: March 2008 IDRD51-0-A1F1C–32C XDR DRAM 512-Mbit XDR DRAM RoHS compliant Data Sheet Rev. 1.0 Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–32C Revision History: 2008-03, Rev. 1.0 Page Subjects major changes since last revision All New Data Sheet

Contextual Info: November 2008 IDRD51-0-A1F1C–[32C/40D] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.12 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40D] Revision History: 2008-11, Rev. 1.12 Page Subjects major changes since last revision

xdr rambus

Abstract: xdr elpida
Contextual Info: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are

014701 b

Abstract: 8x4Mx16
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

8x4Mx16

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

XDR Rambus

Abstract: 8x4Mx16
Contextual Info: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low

Rambus XDR

Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

XDR Rambus

Abstract: EDX5116ACSE xdr elpida
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

EDX5116ADSE-3C-E

Abstract: EDX5116ADSE
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

IDRD51-0-A1F1C

Contextual Info: October 2008 IDRD51-0-A1F1C–[32C/40C] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.10 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40C] Revision History: 2008-10, Rev. 1.10 Page Subjects major changes since last revision

Contextual Info: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.

EDX5116ACSE

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

XDR Rambus

Abstract: 8H001
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

E1819E20

Abstract: XDR 1gb EDX1032BBBG
Contextual Info: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.

EDX5116ACSE-3C-E

Abstract: EDX5116ACSE X5116
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

DQ15d

Abstract: EDX5116ADSE-3C-E x5116 E1033E40 EDX5116ADSE T21at 8x4Mx16
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

TC59YM916AMG32A

Abstract: XDR DRAM XDR Rambus Diode smd BD s18 smd ra6 TC59YM916AMG24A Rambus XDR
Contextual Info: TC59YM916AMG24A,32A,32B,40B TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free Overview The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high