T20 64 DIODE Search Results

1SS133 T-77

Abstract: T84 5pin
Contextual Info: Introduction Product packaging and availability Leaded diodes on tape Product availability for the leaded diodes is shown in the following tables and is ranked as standard (★), or semi-standard (☆). • Standard (★) means that the part is kept in stock and is readily available.

simple 5.1 home theater circuit diagram with usb port

Contextual Info: high performance low power computing Colibri T20 Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 500 48 00 l www.toradex.com l info@toradex.com Colibri T20 Datasheet Page | 2 Revision History Date Doc. Rev. Colibri T20 Version Changes

VG36641641

Abstract: VG36641641BT VG36648041BT vg36644041
Contextual Info: VIS VG36644041BT / VG36648041BT / VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 4,194,304 words x 4 bits x 4 banks, 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, respectively. It is fabricated with

marking t17

Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Contextual Info: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3

dynamic ram binary cell

Contextual Info: VIS Preliminary VG3664321 4 1(2)BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Input voltage range 12V nominal 9 – 18V 24V nominal 18 – 36V 48V nominal 36 – 75V “W” model 24V nominal 9 – 36V 48V nominal 18 – 75V

VG36641641

Contextual Info: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS

Contextual Info: VIS N Grade 64Mb CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

VG36648041BT-7

Abstract: VG36648041CT
Contextual Info: VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

DZ89-C91

Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Contextual Info: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £

Contextual Info: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,

VG36641641

Abstract: VG36641641BT
Contextual Info: VIS Preliminary VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

PS-3PF-S4T1-PKL1

Abstract: CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

pme20-24t0515

Abstract: PMT-048 T20 46 diode pme20-24t T20 80 diode
Contextual Info: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT DC/DC HIGH PERFORMANCE Features • Output current up to 4A • Standard 2” x 1.6” x 0.4” package • High efficiency up to 87% • 2:1 and 4:1 wide input voltage range • Six-sided continuous shield

25B crystal

Abstract: PDIP20 PDIP28 PSO20 ST62E20 ST62T10 ST62T15 ST62T20 ST62T25 ST62T10 programmer
Contextual Info: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM

jrc 319

Abstract: ST62E25 equivalent 319 JRC St62t25b6 fet bd 736
Contextual Info: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM

jrc 319

Abstract: jrc 317 X14V 319 JRC ST62T10B6/HWD St62t25b6 ST62T25B6/HWD 317 jrc JRC 022 ST62T10 programmer
Contextual Info: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM

st62ti

Abstract: FZJ 131 FZJ 141 ST62TIo JRC 022 JRC 082 PDIP20 PDIP28 PS020 ST62E20
Contextual Info: r Z T S C S -T H O M S O N *J M , SâlD g»i[LIi(ê«S ill(êê ST62T10, T15, T20, T25 ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency

Contextual Info: Freescale Semiconductor Technical Data MPXY8021A Rev 1, 05/2005 Tire Pressure Monitoring Sensor Temperature Compensated and Calibrated, Fully Integrated, Digital Output The Freescale Semiconductor, Inc. MPXY8021A sensor is an 8-pin tire monitoring sensor which is comprised of a variable capacitance pressure